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公开(公告)号：US20180132393A1
公开(公告)日：2018-05-10
申请号：US15670005
申请日：2017-08-07
发明人： Eric Frank Schulte
CPC分类号： H05K13/046 , B32B38/0008 , B32B2310/14 , B32B2457/00 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/50 , H01L2224/0381 , H01L2224/0401 , H01L2224/05552 , H01L2224/05557 , H01L2224/05568 , H01L2224/05655 , H01L2224/11334 , H01L2224/1181 , H01L2224/11831 , H01L2224/13099 , H01L2224/131 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/1312 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/16145 , H01L2224/81011 , H01L2224/81013 , H01L2224/81054 , H01L2224/81099 , H01L2224/81191 , H01L2224/81193 , H01L2224/812 , H01L2224/81201 , H01L2224/81365 , H01L2224/81895 , H01L2224/81897 , H01L2225/06513 , H01L2225/06565 , H01L2924/00 , H01L2924/0001 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/1431 , H01L2924/1461
摘要： Methods and systems for low-force, low-temperature thermocompression bonding. The present application teaches new methods and structures for three-dimensional integrated circuits, in which cold thermocompression bonding is used to provide reliable bonding. To achieve this, reduction and passivation steps are preferably both used to reduce native oxide on the contact metals and to prevent reformation of native oxide, preferably using atmospheric plasma treatments. Preferably the physical compression height of the elements is set to be only enough to reliably achieve at least some compression of each bonding element pair, compensating for any lack of flatness. Preferably the thermocompression bonding is performed well below the melting point. This not only avoids the deformation of lower levels which is induced by reflow techniques, but also provides a steep relation of force versus z-axis travel, so that a drastically-increasing resistance to compression helps to regulate the degree of thermocompression.
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2.发明授权公开(公告)号：US09368472B2
公开(公告)日：2016-06-14
申请号：US13955246
申请日：2013-07-31
CPC分类号： H01L24/81 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/83 , H01L24/92 , H01L2224/13005 , H01L2224/13082 , H01L2224/13109 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13147 , H01L2224/1403 , H01L2224/14051 , H01L2224/14131 , H01L2224/1416 , H01L2224/14505 , H01L2224/1601 , H01L2224/16104 , H01L2224/16225 , H01L2224/16227 , H01L2224/1703 , H01L2224/17505 , H01L2224/73103 , H01L2224/73203 , H01L2224/81099 , H01L2224/8114 , H01L2224/81193 , H01L2224/81201 , H01L2224/81345 , H01L2224/8183 , H01L2224/83102 , H01L2224/9221 , H01L2924/0132 , H01L2924/0133 , H01L2924/00014 , H01L2924/01047 , H01L2924/0105 , H01L2924/0001 , H01L2924/01029 , H01L2924/01049 , H01L2224/81 , H01L2224/83 , H01L2924/00011
摘要： The invention relates to a flip-chip assembly process for connecting two microelectronic components (1, 2) to each other. According to the invention, it is possible either to proportion the spacers (24) so that they are smaller than the interconnect bumps (22) or to oversize the latter so that their deformation, after having been plastic during the insertion of connective inserts (12), returns to the elastic regime once assembly contact between components (1,2) has been reached. Thanks to the invention, it is possible to control with great precision the gap between the two components during their assembly, and this without adding any additional steps to their manufacturing or to the assembly process.
摘要翻译： 本发明涉及一种用于将两个微电子部件（1,2）彼此连接的倒装芯片组合工艺。 根据本发明，可以使间隔物（24）比例比互连凸块（22）小，或者使间隔件（24）的尺寸小于后者，使得它们在插入连接插入件（12）期间已经塑性之后变形 ），一旦达到组件（1,2）之间的组装接触，就返回到弹性状态。 由于本发明，可以非常精确地控制两个部件在其组装期间的间隙，并且这不会在其制造或组装过程中增加任何附加步骤。
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公开(公告)号：US09030001B2
公开(公告)日：2015-05-12
申请号：US14058955
申请日：2013-10-21
申请人： Tessera, Inc.
发明人： Belgacem Haba
IPC分类号： H01L23/48 , H01L23/52 , H01L21/48 , H01L23/498 , H01L23/00 , H01L25/065 , H01L25/10 , H01L25/00 , H01L21/50 , B82Y40/00
CPC分类号： H01L24/17 , B82Y40/00 , H01L21/4853 , H01L21/50 , H01L23/49811 , H01L23/52 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/73 , H01L24/81 , H01L24/92 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/05644 , H01L2224/05647 , H01L2224/06181 , H01L2224/116 , H01L2224/1182 , H01L2224/11821 , H01L2224/13101 , H01L2224/13144 , H01L2224/13147 , H01L2224/13644 , H01L2224/13794 , H01L2224/13911 , H01L2224/13944 , H01L2224/13947 , H01L2224/16057 , H01L2224/16113 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/29111 , H01L2224/73104 , H01L2224/81026 , H01L2224/81099 , H01L2224/81143 , H01L2224/81192 , H01L2224/81193 , H01L2224/81444 , H01L2224/81447 , H01L2224/81801 , H01L2224/9211 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2225/06565 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15321 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , Y10S977/773 , H01L2224/81 , H01L2924/00 , H01L2224/05552
摘要： A method of making an assembly includes the steps of applying metallic nanoparticles to exposed surfaces of conductive elements of either of or both of a first component and a second component, juxtaposing the conductive elements of the first component with the conductive elements of the second component with the metallic nanoparticles disposed therebetween, and elevating a temperature at least at interfaces of the juxtaposed conductive elements to a joining temperature at which the metallic nanoparticles cause metallurgical joints to form between the juxtaposed conductive elements. The conductive elements of either of or both of the first component and the second component can include substantially rigid posts having top surfaces projecting a height above the surface of the respective component and edge surfaces extending at substantial angles away from the top surfaces thereof.
摘要翻译： 制造组件的方法包括以下步骤：将金属纳米颗粒施加到第一部件和第二部件中的任一个或两者的导电元件的暴露表面上，将第一部件的导电元件与第二部件的导电元件并置， 设置在其间的金属纳米颗粒，并且至少在并置的导电元件的界面处将温度升高到金属纳米粒子在并置的导电元件之间形成冶金接合部的接合温度。 第一部件和第二部件中的任一个或两者的导电元件可以包括基本上刚性的支柱，其具有突出在相应部件的表面上方的高度的顶表面，并且远离其顶表面以基本角度延伸的边缘表面。
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4.发明申请公开(公告)号：US20140038355A1
公开(公告)日：2014-02-06
申请号：US13955246
申请日：2013-07-31
IPC分类号： H01L23/00
CPC分类号： H01L24/81 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/83 , H01L24/92 , H01L2224/13005 , H01L2224/13082 , H01L2224/13109 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13147 , H01L2224/1403 , H01L2224/14051 , H01L2224/14131 , H01L2224/1416 , H01L2224/14505 , H01L2224/1601 , H01L2224/16104 , H01L2224/16225 , H01L2224/16227 , H01L2224/1703 , H01L2224/17505 , H01L2224/73103 , H01L2224/73203 , H01L2224/81099 , H01L2224/8114 , H01L2224/81193 , H01L2224/81201 , H01L2224/81345 , H01L2224/8183 , H01L2224/83102 , H01L2224/9221 , H01L2924/0132 , H01L2924/0133 , H01L2924/00014 , H01L2924/01047 , H01L2924/0105 , H01L2924/0001 , H01L2924/01029 , H01L2924/01049 , H01L2224/81 , H01L2224/83 , H01L2924/00011
摘要： The invention relates to a flip-chip assembly process for connecting two microelectronic components (1, 2) to each other. According to the invention, it is possible either to proportion the spacers (24) so that they are smaller than the interconnect bumps (22) or to oversize the latter so that their deformation, after having been plastic during the insertion of connective inserts (12), returns to the elastic regime once assembly contact between components (1,2) has been reached. Thanks to the invention, it is possible to control with great precision the gap between the two components during their assembly, and this without adding any additional steps to their manufacturing or to the assembly process.
摘要翻译： 本发明涉及一种用于将两个微电子部件（1,2）彼此连接的倒装芯片组合工艺。 根据本发明，可以使间隔物（24）比例比互连凸块（22）小，或者使间隔件（24）的尺寸小于后者，使得它们在插入连接插入件（12）期间已经塑性之后变形 ），一旦达到组件（1,2）之间的组装接触，就返回到弹性状态。 由于本发明，可以非常精确地控制两个部件在其组装期间的间隙，并且这不会在其制造或组装过程中增加任何附加步骤。
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公开(公告)号：US20180132394A1
公开(公告)日：2018-05-10
申请号：US15670007
申请日：2017-08-07
发明人： Eric Frank Schulte
CPC分类号： H05K13/046 , B32B38/0008 , B32B2310/14 , B32B2457/00 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/50 , H01L2224/0381 , H01L2224/0401 , H01L2224/05552 , H01L2224/05557 , H01L2224/05568 , H01L2224/05655 , H01L2224/11334 , H01L2224/1181 , H01L2224/11831 , H01L2224/13099 , H01L2224/131 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/1312 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/16145 , H01L2224/81011 , H01L2224/81013 , H01L2224/81054 , H01L2224/81099 , H01L2224/81191 , H01L2224/81193 , H01L2224/812 , H01L2224/81201 , H01L2224/81365 , H01L2224/81895 , H01L2224/81897 , H01L2225/06513 , H01L2225/06565 , H01L2924/00 , H01L2924/0001 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/1431 , H01L2924/1461
摘要： Methods and systems for low-force, low-temperature thermocompression bonding. The present application teaches new methods and structures for three-dimensional integrated circuits, in which cold thermocompression bonding is used to provide reliable bonding. To achieve this, reduction and passivation steps are preferably both used to reduce native oxide on the contact metals and to prevent reformation of native oxide, preferably using atmospheric plasma treatments. Preferably the physical compression height of the elements is set to be only enough to reliably achieve at least some compression of each bonding element pair, compensating for any lack of flatness. Preferably the thermocompression bonding is performed well below the melting point. This not only avoids the deformation of lower levels which is induced by reflow techniques, but also provides a steep relation of force versus z-axis travel, so that a drastically-increasing resistance to compression helps to regulate the degree of thermocompression.
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公开(公告)号：US09646882B2
公开(公告)日：2017-05-09
申请号：US15261343
申请日：2016-09-09
申请人： Huilong Zhu
发明人： Huilong Zhu
IPC分类号： H01L21/768 , H01L23/528 , H01L21/66 , H01L23/538 , H01L25/00 , H01L25/065 , H01L23/532 , H01L23/522 , H01L23/48 , H01L23/00
CPC分类号： H01L21/76883 , H01L21/76807 , H01L21/76832 , H01L21/76877 , H01L23/481 , H01L23/522 , H01L23/53233 , H01L23/53238 , H01L23/53247 , H01L23/53261 , H01L23/5329 , H01L23/5382 , H01L23/5386 , H01L24/02 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/02335 , H01L2224/0401 , H01L2224/05006 , H01L2224/05026 , H01L2224/05546 , H01L2224/05554 , H01L2224/05571 , H01L2224/05647 , H01L2224/1146 , H01L2224/11472 , H01L2224/11616 , H01L2224/11903 , H01L2224/13017 , H01L2224/13018 , H01L2224/13024 , H01L2224/1308 , H01L2224/13083 , H01L2224/13099 , H01L2224/13147 , H01L2224/16145 , H01L2224/8012 , H01L2224/80895 , H01L2224/80896 , H01L2224/81097 , H01L2224/81099 , H01L2224/81208 , H01L2224/94 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/0104 , H01L2924/01042 , H01L2924/01046 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/10252 , H01L2924/10253 , H01L2924/10271 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/00014 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552 , H01L2224/81
摘要： Methods and structures of connecting at least two integrated circuits in a 3D arrangement by a zigzag conductive chain are disclosed. The zigzag conductive chain, acting as a spring or self-adaptive contact structure (SACS) in a wafer bonding process, is designed to reduce bonding interface stress, to increase bonding interface reliability, and to have an adjustable height to close undesirable opens or voids between contacts of the two integrated circuits.
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公开(公告)号：US09490212B2
公开(公告)日：2016-11-08
申请号：US12798173
申请日：2010-03-31
申请人： Huilong Zhu
发明人： Huilong Zhu
IPC分类号： H01L23/48 , H01L23/485 , H01L23/498 , H01L21/60 , H01L23/532 , H01L23/522 , H01L25/065 , H01L25/00 , H01L21/768 , H01L23/00
CPC分类号： H01L23/5329 , H01L21/76807 , H01L23/481 , H01L23/522 , H01L24/02 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/02335 , H01L2224/0401 , H01L2224/05006 , H01L2224/05026 , H01L2224/05546 , H01L2224/05554 , H01L2224/05571 , H01L2224/05647 , H01L2224/13017 , H01L2224/13018 , H01L2224/13024 , H01L2224/1308 , H01L2224/13083 , H01L2224/13099 , H01L2224/13147 , H01L2224/16145 , H01L2224/8012 , H01L2224/80895 , H01L2224/80896 , H01L2224/81097 , H01L2224/81099 , H01L2224/81208 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/0104 , H01L2924/01042 , H01L2924/01046 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/10252 , H01L2924/10253 , H01L2924/10271 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/00014 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552
摘要： Methods and structures of connecting at least two integrated circuits in a 3D arrangement by a zigzag conductive chain are disclosed. The zigzag conductive chain, acting as a spring or self-adaptive contact structure (SACS) in a wafer bonding process, is designed to reduce bonding interface stress, to increase bonding interface reliability, and to have an adjustable height to close or eliminate undesirable opens or voids between two integrated circuits.
摘要翻译： 公开了通过Z字形导电链将3D布置中的至少两个集成电路连接起来的方法和结构。 在晶片接合工艺中用作弹簧或自适应接触结构（SACS）的之字形导电链被设计为减少接合界面应力，增加键合界面的可靠性，以及具有可调整的高度以封闭或消除不需要的开口 或两个集成电路之间的空隙。
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公开(公告)号：US09406662B2
公开(公告)日：2016-08-02
申请号：US14763095
申请日：2014-03-21
IPC分类号： H01L25/00 , H01L23/00 , H01L27/146 , H01L21/56
CPC分类号： H01L25/50 , H01L21/561 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L24/92 , H01L27/1465 , H01L2224/13011 , H01L2224/13015 , H01L2224/13109 , H01L2224/13111 , H01L2224/13116 , H01L2224/13118 , H01L2224/13124 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/13166 , H01L2224/13169 , H01L2224/1318 , H01L2224/13184 , H01L2224/13186 , H01L2224/13562 , H01L2224/1357 , H01L2224/13609 , H01L2224/13611 , H01L2224/13616 , H01L2224/13618 , H01L2224/13624 , H01L2224/13639 , H01L2224/13644 , H01L2224/13647 , H01L2224/13669 , H01L2224/16052 , H01L2224/16148 , H01L2224/16238 , H01L2224/2741 , H01L2224/27618 , H01L2224/2919 , H01L2224/73104 , H01L2224/73204 , H01L2224/81099 , H01L2224/81193 , H01L2224/81194 , H01L2224/83191 , H01L2224/83859 , H01L2224/83862 , H01L2224/83868 , H01L2224/83871 , H01L2224/83874 , H01L2224/83986 , H01L2224/9211 , H01L2224/92125 , H01L2224/94 , H01L2224/97 , H01L2224/81 , H01L2924/0665 , H01L2924/00014 , H01L2924/01014 , H01L2924/04941 , H01L2224/83 , H01L2924/01074 , H01L2224/27 , H01L2224/274 , H01L2224/276
摘要： A method of assembling a first and a second electronic components includes forming connection elements on an assembly surface of the first component and forming connection elements on an assembly surface of the second component. The method also includes depositing a liquid layer of electrically-insulating curable material on the assembly surface of the first and/or of the second component and arranging the first and second components on each other to place the connection elements of the second component in front of the connection elements of the first component. The method further includes applying a force along a predetermined direction and the first and/or the second components to create electric interconnects each formed of a connection element of the first component and of a connection element of the second component and curing the curable material.
摘要翻译： 组装第一和第二电子部件的方法包括在第一部件的组装表面上形成连接元件，并在第二部件的组装表面上形成连接元件。 该方法还包括将电绝缘的可固化材料的液体层沉积在第一和/或第二部件的组装表面上，并将第一和第二部件彼此排列以将第二部件的连接元件放置在 第一个组件的连接元素。 该方法还包括沿着预定方向施加力并且施加第一和/或第二部件以产生每个由第一部件的连接元件和第二部件的连接元件形成的电互连，并固化可固化材料。
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公开(公告)号：US09397063B2
公开(公告)日：2016-07-19
申请号：US14707465
申请日：2015-05-08
申请人： Tessera, Inc.
发明人： Belgacem Haba
IPC分类号： H01L21/00 , H01L23/00 , H01L21/48 , H01L23/498 , H01L25/065 , H01L25/10 , H01L25/00 , H01L21/50 , H01L23/52 , B82Y40/00
CPC分类号： H01L24/17 , B82Y40/00 , H01L21/4853 , H01L21/50 , H01L23/49811 , H01L23/52 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/73 , H01L24/81 , H01L24/92 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/05644 , H01L2224/05647 , H01L2224/06181 , H01L2224/116 , H01L2224/1182 , H01L2224/11821 , H01L2224/13101 , H01L2224/13144 , H01L2224/13147 , H01L2224/13644 , H01L2224/13794 , H01L2224/13911 , H01L2224/13944 , H01L2224/13947 , H01L2224/16057 , H01L2224/16113 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/29111 , H01L2224/73104 , H01L2224/81026 , H01L2224/81099 , H01L2224/81143 , H01L2224/81192 , H01L2224/81193 , H01L2224/81444 , H01L2224/81447 , H01L2224/81801 , H01L2224/9211 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2225/06565 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15321 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , Y10S977/773 , H01L2224/81 , H01L2924/00 , H01L2224/05552
摘要： A method of making an assembly includes the steps of applying metallic nanoparticles to exposed surfaces of conductive elements of either of or both of a first component and a second component, juxtaposing the conductive elements of the first component with the conductive elements of the second component with the metallic nanoparticles disposed therebetween, and elevating a temperature at least at interfaces of the juxtaposed conductive elements to a joining temperature at which the metallic nanoparticles cause metallurgical joints to form between the juxtaposed conductive elements. The conductive elements of either of or both of the first component and the second component can include substantially rigid posts having top surfaces projecting a height above the surface of the respective component and edge surfaces extending at substantial angles away from the top surfaces thereof.
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公开(公告)号：US20150325762A1
公开(公告)日：2015-11-12
申请号：US14695003
申请日：2015-04-23
发明人： Shou-Wen Hsu , Yu-Feng Lin , Cheng-Bin Liu , Tai-Cheng Tsai , Chin-Hua Hung
IPC分类号： H01L33/62 , H01L29/866 , H01L27/15
CPC分类号： H01L23/00 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/167 , H01L27/15 , H01L29/866 , H01L33/52 , H01L33/62 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/1329 , H01L2224/13439 , H01L2224/16227 , H01L2224/81099 , H01L2224/81191 , H01L2224/81805 , H01L2224/81855 , H01L2924/12035 , H01L2924/12041 , H01L2933/0066 , H01L2924/0105 , H01L2924/00014 , H01L2924/0665
摘要： A package structure and a manufacturing method thereof are disclosed. The package structure includes: a substrate; at least one light emitting diode disposed on the substrate by eutectic bonding; and at least one Zener diode disposed on the substrate by at least one silver glue. The method of manufacturing the package structure includes: providing a substrate; performing a eutectic bonding process to dispose at least one light emitting diode on the substrate; and performing a silver glue bonding process at room temperature to dispose at least one Zener diode on the substrate.
摘要翻译： 公开了一种封装结构及其制造方法。 封装结构包括：衬底; 至少一个发光二极管通过共晶接合设置在基板上; 以及至少一个齐纳二极管，其通过至少一个银胶布置在所述基板上。 制造封装结构的方法包括：提供衬底; 执行共晶接合工艺以在衬底上设置至少一个发光二极管; 并在室温下进行银胶接合处理，以在衬底上设置至少一个齐纳二极管。
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