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    Semiconductor composite apparatus, print head, and image forming apparatus
    2.
    发明授权
    Semiconductor composite apparatus, print head, and image forming apparatus 有权
    半导体复合装置，打印头和图像形成装置

    公开(公告)号：US08415680B2

    公开(公告)日：2013-04-09

    申请号：US11385699

    申请日：2006-03-22

    申请人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Masataka Muto ,  Takahito Suzuki ,  Tomoki Igari

    发明人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Masataka Muto ,  Takahito Suzuki ,  Tomoki Igari

    IPC分类号： H01L31/12

    CPC分类号： B41J2/45 ,  H01L25/167 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2924/00014

    摘要： A semiconductor composite apparatus, includes a first substrate, a semiconductor thin film layer, active devices, first driving circuits, and second driving circuits. The semiconductor thin film layer is formed on the first substrate and is formed of a first semiconductor material. The active devices are formed in the semiconductor thin film layer. The first driving circuits is formed of a second semiconductor material and performing a first function in which the active devices are driven. The second driving circuits are formed of a third semiconductor material and performing a second function in which the active devices are driven, the second function being different from the first function.

    摘要翻译： 半导体复合设备包括第一衬底，半导体薄膜层，有源器件，第一驱动电路和第二驱动电路。 半导体薄膜层形成在第一基板上并由第一半导体材料形成。 有源器件形成在半导体薄膜层中。 第一驱动电路由第二半导体材料形成并且执行驱动有源器件的第一功能。 第二驱动电路由第三半导体材料形成，并且执行驱动有源器件的第二功能，第二功能不同于第一功能。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND HEAD MOUNT DISPLAY DEVICE
    4.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND HEAD MOUNT DISPLAY DEVICE 审中-公开
    半导体发光器件和头戴显示器件

    公开(公告)号：US20120248464A1

    公开(公告)日：2012-10-04

    申请号：US13436934

    申请日：2012-03-31

    申请人： Shinya JUMONJI ,  Takahito SUZUKI

    发明人： Shinya JUMONJI ,  Takahito SUZUKI

    IPC分类号： H01L33/00

    CPC分类号： H01L33/46 ,  G02B27/017 ,  H01L27/156 ,  H01L33/44 ,  H01L2224/48463

    摘要： A semiconductor light emitting device includes a thin-film semiconductor light emitting element, a substrate, a first insulation layer having a surface to which the thin-film semiconductor light emitting element is bonded, a first metal layer composed of aluminum and disposed on a side of the first insulation layer facing the substrate, and a second insulation layer disposed between the first insulation layer and the first metal layer.

    摘要翻译： 半导体发光器件包括薄膜半导体发光元件，衬底，具有与薄膜半导体发光元件接合的表面的第一绝缘层，由铝构成的第一金属层并且设置在一侧 以及设置在所述第一绝缘层和所述第一金属层之间的第二绝缘层。

    Composite semiconductor device, LED print head that employs the composite semiconductor device, and image forming apparatus that employs the LED print head
    5.
    发明授权
    Composite semiconductor device, LED print head that employs the composite semiconductor device, and image forming apparatus that employs the LED print head 有权
    复合半导体器件，采用复合半导体器件的LED打印头以及采用该LED打印头的图像形成装置

    公开(公告)号：US08022418B2

    公开(公告)日：2011-09-20

    申请号：US11737153

    申请日：2007-04-19

    申请人： Tomohiko Sagimori ,  Hiroyuki Fujiwara ,  Mitsuhiko Ogihara ,  Takahito Suzuki

    发明人： Tomohiko Sagimori ,  Hiroyuki Fujiwara ,  Mitsuhiko Ogihara ,  Takahito Suzuki

    IPC分类号： H01L33/38

    CPC分类号： B41J2/45 ,  H01L25/0753 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A composite semiconductor device includes a plurality of semiconductor thin films and a substrate on which the semiconductor thin films are attached. Each semiconductor thin film includes a plurality of semiconductor elements. Each semiconductor element includes a first contact region and a second contact region. The first contact region is connected to a first electrode, and the second contact region is connected to a second electrode. The semiconductor thin film is attached to a substrate such that the plurality of semiconductor elements are aligned in a row, and such that the first contact region and the second contact region are in the row of light emitting elements.

    摘要翻译： 复合半导体器件包括多个半导体薄膜和其上附着半导体薄膜的衬底。 每个半导体薄膜包括多个半导体元件。 每个半导体元件包括第一接触区域和第二接触区域。 第一接触区域连接到第一电极，并且第二接触区域连接到第二电极。 将半导体薄膜附着到基板上，使得多个半导体元件排成一行，并且使得第一接触区域和第二接触区域处于一行发光元件中。

    Semiconductor device and method of manufacturing the same
    7.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07625809B2

    公开(公告)日：2009-12-01

    申请号：US11445241

    申请日：2006-06-02

    申请人： Takahito Suzuki ,  Hiroyuki Fujiwara

    发明人： Takahito Suzuki ,  Hiroyuki Fujiwara

    IPC分类号： H01L29/72

    CPC分类号： B41J2/45 ,  H01L27/153 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes a substrate, and a semiconductor thin film bonded to the substrate, wherein the semiconductor thin film includes a plurality of discrete operating regions and an element isolating region which isolates the plurality of discrete operating regions, and the element isolating region is etched to a shallower depth than a thickness of the semiconductor thin film, and is a thinner region than the plurality of discrete operating regions.

    摘要翻译： 半导体器件包括衬底和结合到衬底的半导体薄膜，其中半导体薄膜包括多个离散的操作区域和隔离多个离散工作区域的元件隔离区域，元件隔离区域被蚀刻 到比半导体薄膜的厚度浅的深度，并且是比多个离散操作区域更薄的区域。

    Semiconductor device, LED head and image forming apparatus
    8.
    发明申请
    Semiconductor device, LED head and image forming apparatus 审中-公开
    半导体器件，LED头和成像设备

    公开(公告)号：US20080251798A1

    公开(公告)日：2008-10-16

    申请号：US12081230

    申请日：2008-04-11

    申请人： Mitsuhiko Ogihara ,  Tomohiko Sagimori ,  Takahito Suzuki ,  Hiroyuki Fujiwara ,  Tomoki Igari ,  Masaaki Sakuta

    发明人： Mitsuhiko Ogihara ,  Tomohiko Sagimori ,  Takahito Suzuki ,  Hiroyuki Fujiwara ,  Tomoki Igari ,  Masaaki Sakuta

    IPC分类号： H01L33/00

    CPC分类号： H01L33/641 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device is supplied which is able to efficiently liberate heat produced by semiconductor element toward external, prevent temperature rise, improve operation characteristic and maintain stable operation. The semiconductor device comprises a substrate and a semiconductor thin film layer which is accumulated on the substrate and contains semiconductor element, the substrate is a metal substrate, between the metal substrate and the semiconductor thin film layer, a diamond-like carbon layer with high heat conductivity and good insulativity is furnished as a surface coating layer.

    摘要翻译： 提供半导体器件，其能够有效地将由半导体元件产生的热量释放到外部，防止温度升高，提高操作特性并保持稳定的操作。 该半导体器件包括：基板和半导体薄膜层，其积聚在基板上并且包含半导体元件，基板是金属基板，金属基板与半导体薄膜层之间，具有高热量的菱形碳层 提供导电性和良好的绝缘性作为表面涂层。

    Semiconductor device, LED print head, that uses the semiconductor, and image forming apparatus that uses the LED print head
    10.
    发明授权
    Semiconductor device, LED print head, that uses the semiconductor, and image forming apparatus that uses the LED print head 有权
    使用该半导体的半导体装置，LED打印头以及使用该LED打印头的图像形成装置

    公开(公告)号：US07361935B2

    公开(公告)日：2008-04-22

    申请号：US11363292

    申请日：2006-02-23

    申请人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Masataka Muto ,  Takahito Suzuki ,  Tomoki Igari

    发明人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Masataka Muto ,  Takahito Suzuki ,  Tomoki Igari

    IPC分类号： H01L27/15

    CPC分类号： H01L27/153 ,  B41J2/451

    摘要： A semiconductor device includes a substrate, conductive layer, semiconductor thin films, and individual electrodes. The conductive layer is formed on the substrate and serves as a common electrode. The thin films are bonded on the conductive layer. Each of the plurality of semiconductor thin films includes at least one active region and a contact layer that is in electrical contact with the conductive layer. Each of the individual electrodes is formed on a surface of a corresponding one of the semiconductor thin films in electrical contact with the active region. The thin film may be a single thin film that includes a plurality of active regions formed therein, in which case a different common electrode may be used instead of the common electrode which is in contact with the surface and is electrically isolated from the individual electrodes.

    摘要翻译： 半导体器件包括衬底，导电层，半导体薄膜和单个电极。 导电层形成在基板上并用作公共电极。 薄膜结合在导电层上。 多个半导体薄膜中的每一个包括至少一个有源区和与导电层电接触的接触层。 每个单独电极形成在与有源区电接触的相应一个半导体薄膜的表面上。 薄膜可以是包括形成在其中的多个有源区域的单个薄膜，在这种情况下，可以使用不同的公共电极来代替与表面接触并与各个电极电隔离的公共电极。