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    Semiconductor device, optical print head and image forming apparatus
    1.
    发明授权
    Semiconductor device, optical print head and image forming apparatus 有权
    半导体器件，光学打印头和成像设备

    公开(公告)号：US08497893B2

    公开(公告)日：2013-07-30

    申请号：US12805041

    申请日：2010-07-08

    申请人： Hironori Furuta ,  Yusuke Nakai ,  Hiroyuki Fujiwara

    发明人： Hironori Furuta ,  Yusuke Nakai ,  Hiroyuki Fujiwara

    IPC分类号： B41J2/435 ,  B41J27/00 ,  H01L29/18

    CPC分类号： H01L27/153 ,  B41J2/451 ,  H01L33/0041

    摘要： A semiconductor device includes three-terminal light emitting element array provided on a substrate, which includes a plurality of three-terminal light emitting elements which are substantially linearly arranged. Each three-terminal light emitting elements includes a first, second and third terminals. The third terminal is used to control a current between the first and second terminals. A Lead-out wiring portion is connected to the plurality of three-terminal light emitting elements. The three-terminal light emitting element array includes a common layer provided between two or more three-terminal light emitting elements adjacent to each other. The common layer mutually connects the second terminals (or the third terminals) of the two or three three-terminal light emitting elements. The lead-out wiring portion includes wirings led from the common layer and the plurality of three-terminal light emitting elements and extending in a direction substantially perpendicular to an arranging direction of the plurality of three-terminal light emitting elements.

    摘要翻译： 半导体器件包括设置在基板上的三端发光元件阵列，其包括基本上线性排列的多个三端子发光元件。 每个三端子发光元件包括第一，第二和第三端子。 第三端子用于控制第一和第二端子之间的电流。 引出布线部分连接到多个三端子发光元件。 三端子发光元件阵列包括设置在彼此相邻的两个或更多个三端子发光元件之间的公共层。 公共层将两个或三个三端子发光元件的第二端子（或第三端子）相互连接。 引出布线部分包括从公共层和多个三端子发光元件引出的布线，并且沿着与多个三端子发光元件的布置方向基本垂直的方向延伸。

    Semiconductor device, optical print head and image forming apparatus
    3.
    发明申请
    Semiconductor device, optical print head and image forming apparatus 有权
    半导体器件，光学打印头和成像设备

    公开(公告)号：US20110007124A1

    公开(公告)日：2011-01-13

    申请号：US12805041

    申请日：2010-07-08

    申请人： Hironori Furuta ,  Yusuke Nakai ,  Hiroyuki Fujiwara

    发明人： Hironori Furuta ,  Yusuke Nakai ,  Hiroyuki Fujiwara

    IPC分类号： B41J2/435 ,  H01L33/00

    CPC分类号： H01L27/153 ,  B41J2/451 ,  H01L33/0041

    摘要： A semiconductor device includes three-terminal light emitting element array provided on a substrate, which includes a plurality of three-terminal light emitting elements which are substantially linearly arranged. Each three-terminal light emitting elements includes a first, second and third terminals. The third terminal is used to control a current between the first and second terminals. A Lead-out wiring portion is connected to the plurality of three-terminal light emitting elements. The three-terminal light emitting element array includes a common layer provided between two or more three-terminal light emitting elements adjacent to each other. The common layer mutually connects the second terminals (or the third terminals) of the two or three three-terminal light emitting elements. The lead-out wiring portion includes wirings led from the common layer and the plurality of three-terminal light emitting elements and extending in a direction substantially perpendicular to an arranging direction of the plurality of three-terminal light emitting elements.

    摘要翻译： 半导体器件包括设置在基板上的三端发光元件阵列，其包括基本上线性排列的多个三端子发光元件。 每个三端子发光元件包括第一，第二和第三端子。 第三端子用于控制第一和第二端子之间的电流。 引出布线部分连接到多个三端子发光元件。 三端子发光元件阵列包括设置在彼此相邻的两个或更多个三端子发光元件之间的公共层。 公共层将两个或三个三端子发光元件的第二端子（或第三端子）相互连接。 引出布线部分包括从公共层和多个三端子发光元件引出的布线，并且沿着与多个三端子发光元件的布置方向基本垂直的方向延伸。

    Semiconductor light emitting apparatus and optical print head
    5.
    发明授权
    Semiconductor light emitting apparatus and optical print head 有权
    半导体发光装置和光学打印头

    公开(公告)号：US08304792B2

    公开(公告)日：2012-11-06

    申请号：US12347144

    申请日：2008-12-31

    申请人： Yusuke Nakai ,  Hironori Furuta ,  Mitsuhiko Ogihara ,  Hiroyuki Fujiwara

    发明人： Yusuke Nakai ,  Hironori Furuta ,  Mitsuhiko Ogihara ,  Hiroyuki Fujiwara

    IPC分类号： H01L33/02

    CPC分类号： H01L33/0041 ,  H01L33/38 ,  H01S5/06203

    摘要： A semiconductor light emitting apparatus is supplied capable of providing a high performance that can optimize simultaneously both an electrical characteristic and a light emitting characteristic. The semiconductor apparatus comprises an anode layer; a cathode layer that has a conductive type different from that of the anode layer; a gate layer that controls an electrical conduction between the anode layer and the cathode layer; an active layer that is set between the anode layer and the cathode layer and emits light through recombination of electron and positive hole; a first cladding layer that is set on one surface of the active layer and has an energy band gap larger than that of the active layer; and a second cladding layer that is set on other surface of the active layer, has an energy band gap larger than that of the active layer and has a conductive type different from that of the first cladding layer, wherein a thickness of the gate layer is or below a mean free path of carriers implanted into the gate layer.

    摘要翻译： 提供能够提供同时优化电特性和发光特性的高性能的半导体发光装置。 半导体装置包括阳极层; 阴极层，其具有与阳极层不同的导电类型; 栅极层，其控制所述阳极层和所述阴极层之间的导电; 设置在阳极层和阴极层之间并通过电子和空穴的复合发光的有源层; 第一包层，其设置在所述有源层的一个表面上，并且具有比所述有源层的能带隙大的能带隙; 以及设置在有源层的其他表面上的第二包层具有比有源层的能带隙大的能带隙，并且具有与第一包层不同的导电类型，其中栅极层的厚度为 或低于植入栅极层的载流子的平均自由程。

    SEMICONDUCTOR DEVICE, LED HEAD AND IMAGE FORMING APPARATUS
    6.
    发明申请
    SEMICONDUCTOR DEVICE, LED HEAD AND IMAGE FORMING APPARATUS 有权
    半导体器件，LED头和图像形成装置

    公开(公告)号：US20090224276A1

    公开(公告)日：2009-09-10

    申请号：US12397466

    申请日：2009-03-04

    申请人： Tomoki IGARI ,  Tomohiko SAGIMORI ,  Mitsuhiko OGIHARA ,  Takahito SUZUKI ,  Hiroyuki FUJIWARA ,  Hironori FURUTA ,  Yusuke NAKAI

    发明人： Tomoki IGARI ,  Tomohiko SAGIMORI ,  Mitsuhiko OGIHARA ,  Takahito SUZUKI ,  Hiroyuki FUJIWARA ,  Hironori FURUTA ,  Yusuke NAKAI

    IPC分类号： H01L33/00

    CPC分类号： H01L33/60 ,  B41J2/45

    摘要： Provided is a technique of effectively extracting the beams of light excited in an LED light emitter other than the light beams emitted from a light-emitting region in the direction of a light-extraction surface. A pit with a tapered sidewall is formed in a substrate. A thin-film semiconductor element is attached to the pit. Light beams emitted from a side surface of the thin-film semiconductor element are reflected by the sidewall of the thin-film semiconductor element. Achieved thereby is effective extraction of light beams other than the light beams emitted from the light-emitting region in the direction of the light-extraction surface.

    摘要翻译： 提供了一种有效地提取除了从发光区域在光提取表面的方向发射的光束之外在LED发光器中激发的光束的技术。 在基板上形成具有锥形侧壁的凹坑。 薄膜半导体元件附着在凹坑上。 从薄膜半导体元件的侧面发射的光束被薄膜半导体元件的侧壁反射。 由此实现了除了从发光区域在光提取面的方向发射的光束以外的光束的有效提取。

    Semiconductor device
    7.
    发明申请
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号：US20090212398A1

    公开(公告)日：2009-08-27

    申请号：US12379574

    申请日：2009-02-25

    申请人： Takahito Suzuki ,  Hiroyuki Fujiwara ,  Tomohiko Sagimori ,  Tomoki Igari ,  Hironori Furuta ,  Yusuke Nakai ,  Mitutsuhiko Ogihara

    发明人： Takahito Suzuki ,  Hiroyuki Fujiwara ,  Tomohiko Sagimori ,  Tomoki Igari ,  Hironori Furuta ,  Yusuke Nakai ,  Mitutsuhiko Ogihara

    IPC分类号： H01L23/34

    CPC分类号： H01L33/12 ,  H01L23/145 ,  H01L23/3735 ,  H01L33/20 ,  H01L51/00 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A thin-film semiconductor element is formed on a plastic substrate in a semiconductor device. A thermal expansion buffer layer is interposed between the thin-film semiconductor element and the plastic substrate. Although the thin-film semiconductor element is made from a material with a thermal expansion coefficient differing from the thermal expansion coefficient of the plastic substrate, the thermal expansion buffer layer interposed between the thin-film semiconductor element and the plastic substrate protects the thin-film semiconductor element from damage caused by mechanical stress in the device fabrication process due to the different thermal expansion coefficients, enabling the semiconductor device to function reliably.

    摘要翻译： 在半导体器件中的塑料基板上形成薄膜半导体元件。 在薄膜半导体元件和塑料基板之间插入热膨胀缓冲层。 尽管薄膜半导体元件由具有与塑料基板的热膨胀系数不同的热膨胀系数的材料制成，但介于薄膜半导体元件和塑料基板之间的热膨胀缓冲层保护薄膜 半导体元件由于不同的热膨胀系数而在器件制造过程中由机械应力引起的损坏，使半导体器件能够可靠地工作。

    Method of manufacturing by etching a semiconductor substrate horizontally without creating a vertical face
    9.
    发明授权
    Method of manufacturing by etching a semiconductor substrate horizontally without creating a vertical face 有权
    通过在不产生垂直面的情况下水平蚀刻半导体衬底来制造方法

    公开(公告)号：US07947576B2

    公开(公告)日：2011-05-24

    申请号：US12401754

    申请日：2009-03-11

    申请人： Tomoki Igari ,  Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Hironori Furuta ,  Takahito Suzuki ,  Tomohiko Sagimori ,  Yusuke Nakai

    发明人： Tomoki Igari ,  Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Hironori Furuta ,  Takahito Suzuki ,  Tomohiko Sagimori ,  Yusuke Nakai

    IPC分类号： H01L21/20

    CPC分类号： H01L33/0095 ,  H01L33/0079

    摘要： An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer.

    摘要翻译： 本发明的一个方面提供一种制造半导体元件的方法的方法，包括以下步骤：在半导体衬底的顶部上外延生长半导体层; 通过在生长的半导体层的顶部上的图案化工艺形成图案来形成生长的半导体层的图案化部分; 通过第一蚀刻方法用第一蚀刻剂除去图案化部分以外的半导体层的一部分; 以及将第一蚀刻方法的结果浸入通过第二蚀刻方法仅蚀刻半导体衬底的第二蚀刻剂，从而从半导体层移除衬底。