Abstract:
A pre-formed integrated circuit chip-containing module formed from layers is disclosed. Each layer contains an integrated circuit chip that is encapsulated into an electronic package, by forming an interconnect assembly separately from the pre-formed integrated circuit chip. If the interconnect assembly tests good it is bonded to the prepared integrated circuit chip. The interconnect assembly is flip bonded to the chip. The interconnect assembly and chip are passivated or potted into an integral structure to provide the electronic package. At least one test pad is defined in an interconnect layer, which test pad can be accessed and electrically connected on opposing sides of the test pad. The chip is underfilled with an insulating material to remove all voids between the chip and the interconnect assembly. The integrated circuit chip is then thinned. The test pad is accessed to test the chip. A plurality of interconnect assemblies and chips are bonded together to form a corresponding plurality of electronic packages. Each layer is bonded to form a stack of integrated circuit containing layers.
Abstract:
A stackable layer and stacked multilayer module are disclosed. Individual integrated circuit die are tested and processed at the wafer level to create vertical area interconnect vias for the routing of electrical signals from the active surface of the die to the inactive surface. Vias are formed at predefined locations on each die on the wafer at the reticle level using a series of semiconductor processing steps. The wafer is passivated and the vias are filled with a conductive material. The bond pads on the die are exposed and a metallization reroute from the user-selected bond pads and vias is applied. The wafer is then segmented to form thin, stackable layers that can be stacked and vertically electrically interconnected using the conductive vias, forming high-density electronic modules which may, in turn, be further stacked and interconnected to form larger more complex stacks.
Abstract:
A stackable layer and stacked multilayer module are disclosed. Individual integrated circuit die are tested and processed at the wafer level to create vertical area interconnect vias for the routing of electrical signals from the active surface of the die to the inactive surface. Vias are formed at predefined locations on each die on the wafer at the reticle level using a series of semiconductor processing steps. The wafer is passivated and the vias are filled with a conductive material. The bond pads on the die are exposed and a metallization reroute from the user-selected bond pads and vias is applied. The wafer is then segmented to form thin, stackable layers that can be stacked and vertically electrically interconnected using the conductive vias, forming high-density electronic modules which may, in turn, be further stacked and interconnected to form larger more complex stacks.
Abstract:
A pre-formed integrated circuit chip is encapsulated into an electronic package, by forming an interconnect assembly separately from the pre-formed integrated circuit chip. If the interconnect assembly tests good it is bonded to the prepared integrated circuit chip. The interconnect assembly is flip bonded to the chip. The interconnect assembly and chip are passivated or potted into an integral structure to provide the electronic package. At least one test pad is defined in an interconnect layer, which test pad can be accessed and electrically connected on opposing sides of the test pad. The chip is underfilled with an insulating material to remove all voids between the chip and the interconnect assembly. The integrated circuit chip is then thinned. The test pad is accessed to test the chip. A plurality of interconnect assemblies and chips are bonded together to form a corresponding plurality of electronic packages.
Abstract:
A stackable integrated circuit chip layer and module device that avoids the use of electrically conductive elements on the external surfaces of a layer containing an integrated circuit die by taking advantage of conventional wire bonding equipment to provide an electrically conductive path defined by a wire bond segment that is encapsulated in a potting material so as to define an electrically conductive wire bond “through-via” accessible from at least the lower or second surface of the layer.
Abstract:
A stackable layer and stacked multilayer module are disclosed. Individual integrated circuit die are tested and processed at the wafer level to create vertical area interconnect vias for the routing of electrical signals from the active surface of the die to the inactive surface. Vias are formed at predefined locations on each die on the wafer at the reticle level using a series of semiconductor processing steps. The wafer is passivated and the vias are filled with a conductive material. The bond pads on the die are exposed and a metallization reroute from the user-selected bond pads and vias is applied. The wafer is then segmented to form thin, stackable layers that can be stacked and vertically electrically interconnected using the conductive vias, forming high-density electronic modules which may, in turn, be further stacked and interconnected to form larger more complex stacks.