公开(公告)号：US09515160B2

公开(公告)日：2016-12-06

申请号：US15001726

申请日：2016-01-20

申请人： DENSO CORPORATION ,  KAZUMI CHIDA

发明人： Yuichi Takeuchi ,  Kazumi Chida ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC分类号： H01L29/66 ,  H01L29/423 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/04 ,  H01L29/739 ,  H01L29/78 ,  H01L29/16 ,  H01L29/04 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L29/66068 ,  H01L21/02529 ,  H01L21/0455 ,  H01L21/0475 ,  H01L21/049 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827

摘要： In a method for producing an SiC semiconductor device, a p type layer is formed in a trench by epitaxially growing, and is then left only on a bottom portion and ends of the trench by hydrogen etching, thereby to form a p type SiC layer. Thus, the p type SiC layer can be formed without depending on diagonal ion implantation. Since it is not necessary to separately perform the diagonal ion implantation, it is less likely that a production process will be complicated due to transferring into an ion implantation apparatus, and thus manufacturing costs reduce. Since there is no damage due to a defect caused by the ion implantation, it is possible to reduce a drain leakage and to reliably restrict the p type SiC layer from remaining on the side surface of the trench.

摘要翻译： 在制造SiC半导体器件的方法中，通过外延生长在沟槽中形成p型层，然后仅通过氢蚀刻留在沟槽的底部和端部，从而形成p型SiC层。 因此，可以不依赖于对角离子注入来形成p型SiC层。 由于不需要单独进行对角线离子注入，因此生产工艺由于转移到离子注入装置中而不太可能复杂，因此制造成本降低。 由于由于离子注入引起的缺陷而没有损坏，因此可以减少漏极泄漏并且可靠地限制p型SiC层残留在沟槽的侧表面上。

公开(公告)号：US20150129895A1

公开(公告)日：2015-05-14

申请号：US14402119

申请日：2013-06-06

申请人： Kazumi CHIDA ,  DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Yuichi Takeuchi ,  Kazumi Chida ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC分类号： H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L21/04 ,  H01L29/16

CPC分类号： H01L29/66068 ,  H01L21/02529 ,  H01L21/0455 ,  H01L21/0475 ,  H01L21/049 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827

摘要： In a method for producing an SiC semiconductor device, a p type layer is formed in a trench by epitaxially growing, and is then left only on a bottom portion and ends of the trench by hydrogen etching, thereby to form a p type SiC layer. Thus, the p type SiC layer can be formed without depending on diagonal ion implantation. Since it is not necessary to separately perform the diagonal ion implantation, it is less likely that a production process will be complicated due to transferring into an ion implantation apparatus, and thus manufacturing costs reduce. Since there is no damage due to a defect caused by the ion implantation, it is possible to reduce a drain leakage and to reliably restrict the p type SiC layer from remaining on the side surface of the trench.

摘要翻译： 在制造SiC半导体器件的方法中，通过外延生长在沟槽中形成p型层，然后仅通过氢蚀刻留在沟槽的底部和端部，从而形成p型SiC层。 因此，可以不依赖于对角离子注入来形成p型SiC层。 由于不需要单独进行对角线离子注入，因此生产工艺由于转移到离子注入装置中而不太可能复杂，因此制造成本降低。 由于由于离子注入引起的缺陷而没有损坏，因此可以减少漏极泄漏并且可靠地限制p型SiC层残留在沟槽的侧表面上。

公开(公告)号：US09673288B2

公开(公告)日：2017-06-06

申请号：US14387425

申请日：2013-04-17

申请人： DENSO CORPORATION ,  Kazumi Chida

发明人： Yuichi Takeuchi ,  Kazumi Chida ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC分类号： H01L29/15 ,  H01L31/0312 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/16 ,  H01L21/3065 ,  H01L21/265 ,  H01L21/324 ,  H01L29/10 ,  H01L21/04

CPC分类号： H01L29/4236 ,  H01L21/044 ,  H01L21/0465 ,  H01L21/26513 ,  H01L21/3065 ,  H01L21/324 ,  H01L29/0623 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/66734 ,  H01L29/7813

摘要： In a silicon carbide semiconductor device, a p-type SiC layer is disposed in a corner of a bottom of a trench. Thus, even if an electric field is applied between a drain and a gate when a MOSFET is turned off, a depletion layer in a pn junction between the p-type SiC layer and an n− type drift layer greatly extends toward the n− type drift layer, and a high voltage caused by an influence of a drain voltage hardly enters a gate insulating film. Hence, an electric field concentration within the gate insulating film can be reduced, and the gate insulating film can be restricted from being broken. In this case, although the p-type SiC layer may be in a floating state, the p-type SiC layer is formed in only the corner of the bottom of the trench. Thus, the deterioration of the switching characteristic is relatively low.

公开(公告)号：US09337298B2

公开(公告)日：2016-05-10

申请号：US14402119

申请日：2013-06-06

申请人： DENSO CORPORATION ,  Kazumi Chida

发明人： Yuichi Takeuchi ,  Kazumi Chida ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC分类号： H01L29/66 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78 ,  H01L29/06 ,  H01L21/04 ,  H01L29/16 ,  H01L21/3065 ,  H01L29/04 ,  H01L29/10

CPC分类号： H01L29/66068 ,  H01L21/02529 ,  H01L21/0455 ,  H01L21/0475 ,  H01L21/049 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827

摘要： In a method for producing an SiC semiconductor device, a p type layer is formed in a trench by epitaxially growing, and is then left only on a bottom portion and ends of the trench by hydrogen etching, thereby to form a p type SiC layer. Thus, the p type SiC layer can be formed without depending on diagonal ion implantation. Since it is not necessary to separately perform the diagonal ion implantation, it is less likely that a production process will be complicated due to transferring into an ion implantation apparatus, and thus manufacturing costs reduce. Since there is no damage due to a defect caused by the ion implantation, it is possible to reduce a drain leakage and to reliably restrict the p type SiC layer from remaining on the side surface of the trench.

公开(公告)号：US20160163818A1

公开(公告)日：2016-06-09

申请号：US15001726

申请日：2016-01-20

申请人： KAZUMI CHIDA ,  DENSO CORPORATION

发明人： Yuichi TAKEUCHI ,  Kazumi CHIDA ,  Narumasa SOEJIMA ,  Yukihiko WATANABE

IPC分类号： H01L29/66 ,  H01L21/3065 ,  H01L21/04 ,  H01L21/02 ,  H01L29/16 ,  H01L29/423

CPC分类号： H01L29/66068 ,  H01L21/02529 ,  H01L21/0455 ,  H01L21/0475 ,  H01L21/049 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827

摘要： In a method for producing an SiC semiconductor device, a p type layer is formed in a trench by epitaxially growing, and is then left only on a bottom portion and ends of the trench by hydrogen etching, thereby to form a p type SiC layer. Thus, the p type SiC layer can be formed without depending on diagonal ion implantation. Since it is not necessary to separately perform the diagonal ion implantation, it is less likely that a production process will be complicated due to transferring into an ion implantation apparatus, and thus manufacturing costs reduce. Since there is no damage due to a defect caused by the ion implantation, it is possible to reduce a drain leakage and to reliably restrict the p type SiC layer from remaining on the side surface of the trench.

公开(公告)号：US06568267B2

公开(公告)日：2003-05-27

申请号：US09838287

申请日：2001-04-20

申请人： Kazumi Chida ,  Masato Hashimoto ,  Masaru Nagao ,  Hidemi Senda ,  Norihisa Okayama ,  Keiko Neki ,  Masahiro Sugimoto

发明人： Kazumi Chida ,  Masato Hashimoto ,  Masaru Nagao ,  Hidemi Senda ,  Norihisa Okayama ,  Keiko Neki ,  Masahiro Sugimoto

IPC分类号： G01C1900

CPC分类号： G01C19/5719 ,  G01P2015/0814

摘要： A sensing device, such as an angular speed detecting device, includes a vibrator for improving detection precision. The vibrator is displaceably supported on a substrate and is vibrated in the direction of an X-axis by driving electrodes. Detecting electrodes detect vibrations of the vibrator in the direction of a Y-axis caused by a Coriolis' force resulting from the angular speed occurring about a Z-axis. Each of the driving and detecting electrodes includes a movable electrode that is connected to the vibrator and that is displaced together therewith on the substrate and a fixed electrode fixed onto the substrate in such a manner as to face the movable electrode. By equalizing conductors connected to fixed electrodes of the driving electrodes and conductors connected to fixed electrodes of the detecting electrodes in length, width, and thickness, respectively, one electrical characteristic is set for those of the wiring portions which function in the same manner.

摘要翻译： 诸如角速度检测装置的感测装置包括用于提高检测精度的振动器。 振动器被可移动地支撑在基板上，并且通过驱动电极在X轴的方向上振动。 检测电极通过由围绕Z轴的角速度产生的科里奥利力产生的Y轴方向检测振动器的振动。 每个驱动和检测电极都包括一个可动电极，它连接到振子上并与基板一起位移在一起，固定电极以面对可动电极的方式固定在基板上。 通过使连接到驱动电极的固定电极的导体和连接到检测电极的固定电极的导体的长度，宽度和厚度分别相等，为相同方式起作用的布线部分设置一个电特性。