公开(公告)号：US10546788B2

公开(公告)日：2020-01-28

申请号：US15811821

申请日：2017-11-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Zhenxing Bi ,  Kangguo Cheng ,  Peng Xu ,  Jie Yang

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/308 ,  H01L21/265 ,  H01L21/223 ,  H01L21/22 ,  H01L21/02 ,  H01L21/225 ,  H01L21/20 ,  H01L21/306 ,  H01L21/8254 ,  H01L21/8256 ,  H01L21/82 ,  H01L21/8252 ,  H01L29/161 ,  H01L21/228

Abstract: A method of making a semiconductor device including forming a first blanket layer on a substrate; forming a second blanket layer on the first blanket layer; patterning a first fin of a first transistor region and a second fin of a second transistor region in the first blanket layer and the second blanket layer; depositing a mask on the second transistor region; removing the first fin to form a trench; growing a first semiconductor layer in the trench where the first fin was removed; and growing a second semiconductor layer on the first semiconductor layer.

公开(公告)号：US20190267475A1

公开(公告)日：2019-08-29

申请号：US16407892

申请日：2019-05-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen W. Bedell ,  Joel P. De Souza ,  Jeehwan Kim ,  Devendra K. Sadana

IPC: H01L29/66 ,  H01L29/161 ,  H01L29/16 ,  H01L21/762 ,  H01L21/324 ,  H01L21/24 ,  H01L21/02 ,  H01L21/228 ,  H01L21/265 ,  H01L29/78 ,  H01L21/288 ,  H01L29/10 ,  H01L29/786

Abstract: A layer of amorphous silicon is formed on a germanium-on-insulator substrate, or a layer of germanium is formed on a silicon-on-insulator substrate. An anneal is then performed which causes thermal mixing of silicon and germanium atoms within one of the aforementioned structures and subsequent formation of a silicon germanium-on-insulator material.

公开(公告)号：US10115587B2

公开(公告)日：2018-10-30

申请号：US13879371

申请日：2012-02-23

Applicant: Haruo Nakazawa ,  Masaaki Ogino ,  Hidenao Kuribayashi ,  Hideaki Teranishi

Inventor： Haruo Nakazawa ,  Masaaki Ogino ,  Hidenao Kuribayashi ,  Hideaki Teranishi

IPC: H01L21/02 ,  C30B29/06 ,  C30B33/02 ,  H01L29/66 ,  H01L21/228

Abstract: A reverse blocking IGBT is manufactured using a silicon wafer sliced from a single crystal silicon ingot which is manufactured by a floating method using a single crystal silicon ingot manufactured by a Czochralski method as a raw material. A separation layer for ensuring a reverse blocking performance of the reverse blocking IGBT is formed by diffusing impurities implanted into the silicon wafer using a thermal diffusion process. The thermal diffusion process for forming the separation layer is performed in an inert gas atmosphere at a temperature equal to or more than 1290° C. and less than the melting point of silicon. In this way, no crystal defect occurs in the silicon wafer and it is possible to prevent the occurrence of a reverse breakdown voltage defect or a forward defect in the reverse blocking IGBT and thus improve the yield of a semiconductor element.

公开(公告)号：US09620666B2

公开(公告)日：2017-04-11

申请号：US14562041

申请日：2014-12-05

Applicant: Tokyo Ohka Kogyo Co., Ltd.

Inventor： Toshiro Morita ,  Takashi Kamizono

IPC: H01L31/18 ,  H01L21/22 ,  H01L21/225 ,  H01L31/068 ,  H01L51/00 ,  H01L51/44 ,  H01L51/52 ,  H01L21/228

CPC classification number: H01L31/186 ,  H01L21/2225 ,  H01L21/2254 ,  H01L21/228 ,  H01L31/0682 ,  H01L31/1804 ,  H01L51/0096 ,  H01L51/448 ,  H01L51/5253 ,  Y02E10/547 ,  Y02E10/549 ,  Y02P70/521

Abstract: A diffusing agent composition including a condensation product and an impurity diffusion component. The condensation product is a reaction product resulting from hydrolysis of an alkoxysilane. The impurity diffusion component is a monoester or diester of phosphoric acid, or a mixture thereof.

公开(公告)号：US09620354B2

公开(公告)日：2017-04-11

申请号：US14872714

申请日：2015-10-01

Applicant: TOKYO OHKA KOGYO CO., LTD.

Inventor： Yoshihiro Sawada

IPC: H01L21/02 ,  H01L21/22 ,  H01L21/225 ,  H01L21/228

CPC classification number: H01L21/0206 ,  H01L21/2225 ,  H01L21/2255 ,  H01L21/228 ,  H01L29/66803

Abstract: A method for manufacturing a semiconductor substrate. An impurity diffusion ingredient can be diffused well and uniformly from a coating film into a semiconductor substrate by forming a coating film having a thickness of not more than 30 nm on a surface of a semiconductor substrate with a diffusion agent composition containing an impurity diffusion ingredient and a silicon compound that can be hydrolyzed to produce a silanol group.

公开(公告)号：US09537041B2

公开(公告)日：2017-01-03

申请号：US14318374

申请日：2014-06-27

Applicant: Paul Loscutoff ,  Gabriel Harley

Inventor： Paul Loscutoff ,  Gabriel Harley

IPC: H01L31/18 ,  H01L31/065 ,  H01L31/0216 ,  H01L31/0224 ,  H01L21/268 ,  H01L21/228 ,  H01L31/02 ,  H01L21/22 ,  H01L31/05 ,  H01L31/068

CPC classification number: H01L31/065 ,  H01L21/2225 ,  H01L21/228 ,  H01L21/268 ,  H01L31/02008 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

Abstract: A system and method of patterning dopants of opposite polarity to form a solar cell is described. Two dopant films are deposited on a substrate. A laser is used to pattern the N-type dopant, by mixing the two dopant films into a single film with an exposure to the laser and/or drive the N-type dopant into the substrate to form an N-type emitter. A thermal process drives the P-type dopant from the P-type dopant film to form P-type emitters and further drives the N-type dopant from the single film to either form or further drive the N-type emitter.

Abstract translation: 描述了以相反极性构图掺杂剂以形成太阳能电池的系统和方法。 在衬底上沉积两个掺杂剂膜。 使用激光来对N型掺杂剂进行图案化，通过将两种掺杂剂膜混合成单一膜并暴露于激光器和/或将N型掺杂剂驱动到衬底中以形成N型发射体。 热处理从P型掺杂剂膜驱动P型掺杂剂以形成P型发射体，并进一步从单一膜驱动N型掺杂剂以形成或进一步驱动N型发射极。

公开(公告)号：US20160351397A1

公开(公告)日：2016-12-01

申请号：US15237198

申请日：2016-08-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen W. Bedell ,  Joel P. De Souza ,  Jeehwan Kim ,  Devendra K. Sadana

IPC: H01L21/228 ,  H01L21/24 ,  H01L21/02

CPC classification number: H01L29/66795 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/228 ,  H01L21/24 ,  H01L21/26513 ,  H01L21/288 ,  H01L21/324 ,  H01L21/7624 ,  H01L21/76251 ,  H01L21/76283 ,  H01L29/1054 ,  H01L29/1604 ,  H01L29/161 ,  H01L29/775 ,  H01L29/7842 ,  H01L29/785 ,  H01L29/78684 ,  H01L29/78696

Abstract: A layer of amorphous silicon is formed on a germanium-on-insulator substrate, or a layer of germanium is formed on a silicon-on-insulator substrate. An anneal is then performed which causes thermal mixing of silicon and germanium atoms within one of the aforementioned structures and subsequent formation of a silicon germanium-on-insulator material.

公开(公告)号：US09343310B1

公开(公告)日：2016-05-17

申请号：US13928341

申请日：2013-06-26

Applicant: Nathaniel R Quick ,  Michael C Murray

Inventor： Nathaniel R Quick ,  Michael C Murray

IPC: H01L21/20 ,  H01L21/26 ,  H01L21/283 ,  H01L21/3205 ,  H01L21/02 ,  H01B13/00 ,  H01L21/228 ,  H01L33/02

CPC classification number: H01L21/2026 ,  H01B13/003 ,  H01L21/02266 ,  H01L21/02675 ,  H01L21/02697 ,  H01L21/228 ,  H01L21/268 ,  H01L21/283 ,  H01L33/0054 ,  H01L33/02 ,  H01Q1/38 ,  H05K3/10 ,  H05K3/102 ,  H05K2201/0108 ,  H05K2203/0528 ,  H05K2203/105 ,  H05K2203/107 ,  H05K2203/1581

Abstract: An apparatus and a method are disclosed for forming electrical conductors and/or semiconductors on a glass substrate. The electrical conductors and/or semiconductors are formed by applying a conducting material or a semiconductor material to a surface of the glass substrate and irradiating the interface with a focused laser beam transmitted through the glass. An electrical conductor may be formed on a glass substrate or a semiconductor substrate to provide an electrical antenna for radio frequency communication.

Abstract translation: 公开了用于在玻璃基板上形成电导体和/或半导体的装置和方法。 电导体和/或半导体通过将导电材料或半导体材料施加到玻璃基板的表面并用透射通过玻璃的聚焦激光束照射界面而形成。 电导体可以形成在玻璃基板或半导体基板上，以提供用于射频通信的电天线。

公开(公告)号：US20160005606A1

公开(公告)日：2016-01-07

申请号：US14729491

申请日：2015-06-03

Applicant: Fuji Electric Co., Ltd.

Inventor： Haruo NAKAZAWA ,  Kenichi IGUCHI ,  Masaaki OGINO

IPC: H01L21/228 ,  B05C13/00 ,  H01L21/04 ,  B05C3/02 ,  H01L21/268 ,  H01L21/283

CPC classification number: H01L21/0455 ,  H01L21/268 ,  H01L29/66712 ,  H01L29/7802

Abstract: A method for introducing impurity into a semiconductor substrate includes bringing a solution containing a compound of an impurity element into contact with a primary surface of a semiconductor substrate; and irradiating the primary surface of the semiconductor substrate with a laser beam through the solution to raise a temperature of the primary surface of the semiconductor substrate at a position irradiated by the laser beam so as to dope the impurity element into the semiconductor substrate. The laser beam irradiation is performed such that the raised temperature does not return to room temperature until a prescribed dose of the impurity element is caused to be doped into the semiconductor substrate.

Abstract translation: 将杂质引入半导体衬底的方法包括使含有杂质元素的化合物的溶液与半导体衬底的主表面接触; 以及通过所述溶液用激光束照射所述半导体衬底的所述主表面，以在由所述激光束照射的位置处升高所述半导体衬底的主表面的温度，以将所述杂质元素掺杂到所述半导体衬底中。 执行激光束照射，使得升高的温度不会恢复到室温，直到使规定剂量的杂质元素掺杂到半导体衬底中。

公开(公告)号：US20150280011A1

公开(公告)日：2015-10-01

申请号：US14256895

申请日：2014-04-18

Applicant: Korea Advanced Institute of Science and Technology ,  Lam Research Corporation

Inventor： Byung Jin Cho ,  Jae Hoon Bong ,  Onejae Sul ,  Hyungsuk Alexander Yoon

IPC: H01L29/786 ,  H01L21/228 ,  H01L21/22

CPC classification number: H01L29/78684 ,  H01L21/2225 ,  H01L21/228 ,  H01L29/1606 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

Abstract: This disclosure relates to a method of manufacturing n-doped graphene and an electrical component using ammonium fluoride (NH4F), and to graphene and an electrical component thereby. An example method of manufacturing n-doped graphene includes (a) preparing graphene and ammonium fluoride (NH4F); and (b) exposing the graphene to the ammonium fluoride (NH4F), wherein through (b), a fluorine layer is formed on part or all of upper and lower surfaces of a graphene layer, and ammonium ions are physisorbed to part or all of the upper and lower surfaces of the graphene layer or defects between carbon atoms of the graphene layer, thereby maintaining or further improving superior electrical properties of graphene including charge mobility while performing n-doping of graphene.

Abstract translation: 本公开内容涉及使用氟化铵（NH 4 F）制造n掺杂石墨烯的方法和由此形成的石墨烯和电气部件的方法。 制造n掺杂石墨烯的示例性方法包括（a）制备石墨烯和氟化铵（NH 4 F）; 和（b）将石墨烯暴露于氟化铵（NH 4 F）中，其中通过（b）在石墨烯层的上表面和下表面的一部分或全部上形成氟层，并将铵离子物理吸附到部分或全部 石墨烯层的上表面和下表面或石墨烯层的碳原子之间的缺陷，由此维持或进一步改善石墨烯的优异的电性能，包括电荷迁移率，同时进行石墨烯的n掺杂。