Invention Application
- Patent Title: SILICON GERMANIUM-ON-INSULATOR FORMATION BY THERMAL MIXING
-
Application No.: US16407892Application Date: 2019-05-09
-
Publication No.: US20190267475A1Publication Date: 2019-08-29
- Inventor: Stephen W. Bedell , Joel P. De Souza , Jeehwan Kim , Devendra K. Sadana
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/161 ; H01L29/16 ; H01L21/762 ; H01L21/324 ; H01L21/24 ; H01L21/02 ; H01L21/228 ; H01L21/265 ; H01L29/78 ; H01L21/288 ; H01L29/10 ; H01L29/786
Abstract:
A layer of amorphous silicon is formed on a germanium-on-insulator substrate, or a layer of germanium is formed on a silicon-on-insulator substrate. An anneal is then performed which causes thermal mixing of silicon and germanium atoms within one of the aforementioned structures and subsequent formation of a silicon germanium-on-insulator material.
Information query
IPC分类:
