专利检索 ap:("CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE" OR "UNIVERSITE PIERRE ET MARIE CURIE (PARIS 6)") AND inv:"Andrea PARADISI" 第 1 页

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发明申请
ELECTROSTATIC DOPING OF A LAYER OF A CONDUCTIVE OR NON-CONDUCTIVE MATERIAL 审中-公开

公开(公告)号：US20180215658A1

公开(公告)日：2018-08-02

申请号：US15747564

申请日：2016-07-27

申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE , UNIVERSITE PIERRE ET MARIE CURIE (PARIS 6)

发明人： Abhay SHUKLA , Johan BISCARAS , Andrea PARADISI

IPC分类号： C03C17/245 , C03C17/22

CPC分类号： C03C17/245 , C03C17/22 , C03C17/23 , C03C2217/216 , C03C2217/28 , C03C2217/288 , C03C2217/944 , C03C2218/152 , C03C2218/154 , C03C2218/32 , H01B13/0033 , H01L31/022466 , H01L31/028 , H01L31/032 , H01L31/0321 , H01L31/18 , H01L31/1884 , H01L39/24 , Y02E10/547

摘要： The invention relates to a process for permanently electrostatically doping a layer of a conductive or non-conductive material that is deposited on a solid substrate, to the doped material obtained according to this process, and to the use of such a material.