公开(公告)号：US09099327B2

公开(公告)日：2015-08-04

申请号：US13568839

申请日：2012-08-07

申请人： Wilfried Haensch ,  Christian Lavoie ,  Christine Qiqing Ouyang ,  Xiaoyan Shao ,  Paul M. Solomon ,  Zhen Zhang ,  Bin Yang

发明人： Wilfried Haensch ,  Christian Lavoie ,  Christine Qiqing Ouyang ,  Xiaoyan Shao ,  Paul M. Solomon ,  Zhen Zhang ,  Bin Yang

IPC分类号： H01L29/06 ,  H01L21/8238 ,  H01L29/417

CPC分类号： H01L29/0673 ,  H01L21/823814 ,  H01L29/41791

摘要： A multigate structure which comprises a semiconductor substrate; an ultra-thin silicon or carbon bodies of less than 20 nanometers thick located on the substrate; an electrolessly deposited metallic layer selectively located on the side surfaces and top surfaces of the ultra-thin silicon or carbon bodies and selectively located on top of the multigate structures to make electrical contact with the ultra-thin silicon or carbon bodies and to minimize parasitic resistance, and wherein the ultra-thin silicon or carbon bodies and metallic layer located thereon form source and drain regions is provided along with a process to fabricate the structure.

摘要翻译： 一种多栅格结构，包括半导体衬底; 位于基板上的小于20纳米厚的超薄硅或碳体; 选择性地位于超薄硅或碳体的侧表面和顶表面上的无电沉积金属层，并且选择性地位于多结构结构的顶部上以与超薄硅或碳体电接触并最小化寄生电阻 并且其中位于其上的超薄硅或碳体和金属层形成源区和漏区以及制造该结构的工艺。

公开(公告)号：US20140375778A1

公开(公告)日：2014-12-25

申请号：US14354949

申请日：2011-12-21

申请人： Yongping Miao ,  Zhen Zhang ,  Junyu Luo ,  Weisong Gao

发明人： Yongping Miao ,  Zhen Zhang ,  Junyu Luo ,  Weisong Gao

IPC分类号： H04N13/04

CPC分类号： H04N13/302 ,  H04N13/31 ,  H04N13/327 ,  H04N13/366 ,  H04N13/373 ,  H04N13/376 ,  H04N13/38 ,  H04N13/383

摘要： Disclosed in the present application are a method and device for determining the position of a viewer and adjusting a viewing area, and a device for displaying three-dimensional video signals, such that the position of a viewer in front of an electronic device can be accurately determined and the viewing area can be adjusted according to the specific position, enabling the viewer to be unaware of any sudden viewing change when watching 3D signals. The method for determining the position of the viewer is applied in an electronic device comprising a display screen capable of displaying three-dimensional video signals. The viewing areas of the electronic device include a three-dimensional display area and a non-three-dimensional display area. The method comprises: acquiring the image in front of the electronic device; judging whether the image contains the face image of the viewer; if the image contains the face image, identifying at least one feature in the face image to determine the position of the viewer; according to the at least one feature, determining whether the viewing area of the viewer is a three-dimensional display area or a non-three-dimensional display area.

摘要翻译： 在本申请中公开了一种用于确定观看者的位置和调整观看区域的方法和装置，以及用于显示三维视频信号的装置，使得电子设备前面的观众的位置可以准确地 并且可以根据特定位置来调整观看区域，使得观看者在观看3D信号时不会意识到任何突然的观看变化。 用于确定观看者的位置的方法被应用于包括能够显示三维视频信号的显示屏的电子设备中。 电子设备的观看区域包括三维显示区域和非三维显示区域。 该方法包括：获取电子设备前面的图像; 判断图像是否包含观看者的脸部图像; 如果图像包含脸部图像，则识别脸部图像中的至少一个特征以确定观看者的位置; 根据至少一个特征，确定观看者的观看区域是三维显示区域还是非三维显示区域。

公开(公告)号：US08865556B2

公开(公告)日：2014-10-21

申请号：US13611893

申请日：2012-09-12

申请人： Joseph S. Newbury ,  Kenneth Parker Rodbell ,  Zhen Zhang ,  Yu Zhu

发明人： Joseph S. Newbury ,  Kenneth Parker Rodbell ,  Zhen Zhang ,  Yu Zhu

IPC分类号： H01L29/78 ,  H01L21/8238 ,  H01L21/02

CPC分类号： H01L21/28518 ,  H01L29/45 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： Techniques for forming a smooth silicide without the use of a cap layer are provided. In one aspect, a FET device is provided. The FET device includes a SOI wafer having a SOI layer over a BOX and at least one active area formed in the wafer; a gate stack over a portion of the at least one active area which serves as a channel of the device; source and drain regions of the device adjacent to the gate stack, wherein the source and drain regions of the device include a semiconductor material selected from: silicon and silicon germanium; and silicide contacts to the source and drain regions of the device, wherein an interface is present between the silicide contacts and the semiconductor material, and wherein the interface has an interface roughness of less than about 5 nanometers.

摘要翻译： 提供了不使用盖层形成光滑硅化物的技术。 一方面，提供一种FET器件。 FET器件包括在BOX上具有SOI层的SOI晶片和形成在晶片中的至少一个有源区域; 所述至少一个有效区域的一部分上的栅极堆叠，其用作所述装置的通道; 源极和漏极区域，其中该器件的源极和漏极区域包括选自硅和硅锗的半导体材料; 并且硅化物接触到器件的源极和漏极区域，其中在硅化物触点和半导体材料之间存在界面，并且其中界面的界面粗糙度小于约5纳米。

公开(公告)号：US08682591B2

公开(公告)日：2014-03-25

申请号：US13372137

申请日：2012-02-13

申请人： Daniel W. Chan ,  Zhen Zhang ,  Eric Fung ,  Xiao-Ying Meng

发明人： Daniel W. Chan ,  Zhen Zhang ,  Eric Fung ,  Xiao-Ying Meng

IPC分类号： G01N33/48 ,  G01N31/00 ,  C12Q1/00 ,  G06F19/00

CPC分类号： G06F19/34 ,  G01N33/57449

摘要： The present invention relates to a method of qualifying ovarian cancer status in a subject comprising: (a) measuring at least one biomarker in a sample from the subject and (b) correlating the measurement with ovarian cancer status. The invention further relates to kits for qualifying ovarian cancer status in a subject.

摘要翻译： 本发明涉及一种在受试者中鉴定卵巢癌状态的方法，包括：（a）测量来自受试者的样品中的至少一种生物标志物，和（b）将测量与卵巢癌状态相关联。 本发明还涉及用于在受试者中鉴定卵巢癌状态的试剂盒。

公开(公告)号：US20140024552A1

公开(公告)日：2014-01-23

申请号：US13985140

申请日：2012-02-15

申请人： Zhen Zhang ,  Daniel W. Chan

发明人： Zhen Zhang ,  Daniel W. Chan

IPC分类号： G01N33/574

CPC分类号： G01N33/57449 ,  C12Q1/6886 ,  C12Q2600/158 ,  G01N33/57484 ,  G01N2800/56

摘要： The invention provides methods and compositions for distinguishing ovarian cancer from a benign pelvic mass using two or more of the following biomarkers: IL-6, MMP9, tPA, IGFBP2, MMP7, Tenascin, NAP2, glycodelin, MCSF, MMP2, Inhibin A, uPAR, and EGFR. The methods are useful in distinguishing a benign pelvic mass from ovarian cancer in subjects, particularly in subjects identified as having increased CA125 levels.

摘要翻译： 本发明提供使用以下两种或更多种生物标志物来区分卵巢癌与良性骨盆块的方法和组合物：IL-6，MMP9，tPA，IGFBP2，MMP7，腱生蛋白，NAP2，糖链蛋白，MCSF，MMP2，抑制素A，uPA​​R ，和EGFR。 该方法可用于区分受试者中良性骨盆质量与卵巢癌，特别是在鉴定为具有增加的CA125水平的受试者中。

公开(公告)号：US20140005059A1

公开(公告)日：2014-01-02

申请号：US12530456

申请日：2009-09-08

申请人： Zhen Zhang ,  Jin Song ,  Daniel Wan- Yui Chan

发明人： Zhen Zhang ,  Jin Song ,  Daniel Wan- Yui Chan

IPC分类号： G01N33/574

CPC分类号： G01N33/57449 ,  G01N33/574

摘要： The instant invention provides methods and compositions for the diagnosis and treatment of cancer. The invention also provides method and compositions for determining if a subject is, or is at risk of becoming, chemoresistant.

摘要翻译： 本发明提供了用于诊断和治疗癌症的方法和组合物。 本发明还提供了用于确定受试者是否具有成为化疗耐药性的风险的方法和组合物。

公开(公告)号：US20140000712A1

公开(公告)日：2014-01-02

申请号：US13534519

申请日：2012-06-27

申请人： Qing Cao ,  Zhengwen Li ,  Fei Liu ,  Zhen Zhang

发明人： Qing Cao ,  Zhengwen Li ,  Fei Liu ,  Zhen Zhang

IPC分类号： H01L31/0264 ,  H01L31/18

CPC分类号： H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022475 ,  H01L31/0296 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： A method of forming a photovoltaic device includes forming a thermal stress relieving layer on top of a substrate and forming a sacrificial back electrode metal layer on the thermal stress relieving layer. A semiconductor photon absorber layer is formed on the sacrificial back electrode metal layer, and the absorber layer is reacted with substantially an entire thickness of the sacrificial back electrode metal layer, thereby forming a back ohmic contact comprising a metallic compound of the sacrificial back electrode metal layer and the absorber layer, in combination with the thermal stress relieving layer.

摘要翻译： 形成光伏器件的方法包括在衬底的顶部形成热应力消除层，并在热应力消除层上形成牺牲背电极金属层。 在牺牲背电极金属层上形成半导体光子吸收层，吸收层与牺牲背极金属层的大致整个厚度反应，形成包含牺牲背电极金属的金属化合物的反欧姆接触 层和吸收层，与热应力消除层组合。

公开(公告)号：US08603734B2

公开(公告)日：2013-12-10

申请号：US12663191

申请日：2008-06-04

申请人： Hui Zhang ,  Yan Li ,  Lori J. Sokoll ,  Zhen Zhang ,  Daniel W. Chan

发明人： Hui Zhang ,  Yan Li ,  Lori J. Sokoll ,  Zhen Zhang ,  Daniel W. Chan

IPC分类号： C12Q1/00 ,  G01N24/00

CPC分类号： G01N33/57434 ,  G01N2333/9108 ,  G01N2333/96494

摘要： The instant invention provides methods and compositions for the detection of prostate cancer is a subject. In one embodiment, a method of detecting prostate cancer in a subject comprises the steps of (a) detecting the presence of at least one biomarker listed in Table 1 in a serum sample, wherein the presence of the biomarker in the serum sample is indicative of prostate cancer.

摘要翻译： 本发明提供用于检测前列腺癌的方法和组合物是受试者。 在一个实施方案中，检测受试者中前列腺癌的方法包括以下步骤：（a）在血清样品中检测表1中列出的至少一种生物标志物的存在，其中血清样品中生物标志物的存在表明 前列腺癌。

公开(公告)号：US08557693B2

公开(公告)日：2013-10-15

申请号：US12793046

申请日：2010-06-03

申请人： Tak Hung Ning ,  Zhen Zhang

发明人： Tak Hung Ning ,  Zhen Zhang

IPC分类号： H01L21/22

CPC分类号： H01L29/0847 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/456 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a low resistance contact structure in a semiconductor device includes forming a doped semiconductor region in a semiconductor substrate; forming a deep level impurity region at an upper portion of the doped semiconductor region; activating dopants in both the doped semiconductor region and the deep level impurity region by annealing; and forming a metal contact over the deep level impurity region so as to create a metal-semiconductor interface therebetween.

摘要翻译： 在半导体器件中形成低电阻接触结构的方法包括在半导体衬底中形成掺杂半导体区域; 在所述掺杂半导体区域的上部形成深层杂质区域; 通过退火激活掺杂半导体区域和深层杂质区域中的掺杂剂; 以及在深层杂质区上形成金属接触，从而在它们之间产生金属 - 半导体界面。

公开(公告)号：US20130249099A1

公开(公告)日：2013-09-26

申请号：US13428184

申请日：2012-03-23

申请人： Christian Lavoie ,  Dong-Ick Lee ,  Ahmet Serkan Ozcan ,  Zhen Zhang

发明人： Christian Lavoie ,  Dong-Ick Lee ,  Ahmet Serkan Ozcan ,  Zhen Zhang

IPC分类号： H01L23/48 ,  H01L21/336 ,  H01L21/28

CPC分类号： H01L29/665 ,  H01L21/02381 ,  H01L21/02631 ,  H01L21/244 ,  H01L21/28518 ,  H01L21/32133 ,  H01L21/324 ,  H01L29/161

摘要： In one aspect, a method of fabricating a metal silicide includes the following steps. A semiconductor material selected from the group consisting of silicon and silicon germanium is provided. A metal(s) is deposited on the semiconductor material. A first anneal is performed at a temperature and for a duration sufficient to react the metal(s) with the semiconductor material to form an amorphous layer including an alloy formed from the metal(s) and the semiconductor material, wherein the temperature at which the first anneal is performed is below a temperature at which a crystalline phase of the alloy is formed. An etch is used to selectively remove unreacted portions of the metal(s). A second anneal is performed at a temperature and for a duration sufficient to crystallize the alloy thus forming the metal silicide. A device contact and a method of fabricating a FET device are also provided.