公开(公告)号：US20230197869A1

公开(公告)日：2023-06-22

申请号：US18052325

申请日：2022-11-03

申请人： OXFORD UNIVERSITY INNOVATION LIMITED

发明人： HENRY JAMES SNAITH ,  EDWARD JAMES WILLIAM CROSSLAND ,  ANDREW HEY ,  JAMES BALL ,  MICHAEL LEE ,  PABLO DOCAMPO

IPC分类号： H01L31/036 ,  C23C14/06 ,  H10K30/15 ,  H10K85/00 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0725 ,  H01L31/18

CPC分类号： H01L31/036 ,  C23C14/06 ,  H01L31/0725 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/022466 ,  H01L31/035272 ,  H10K30/15 ,  H10K30/151 ,  H10K85/00 ,  H10K71/40 ,  Y02E10/549

摘要： The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer dis -posed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

公开(公告)号：US20220393048A1

公开(公告)日：2022-12-08

申请号：US17818187

申请日：2022-08-08

申请人： OXFORD UNIVERSITY INNOVATION LIMITED

发明人： HENRY JAMES SNAITH ,  EDWARD JAMES WILLIAM CROSSLAND ,  ANDREW HEY ,  JAMES BALL ,  MICHAEL LEE ,  PABLO DOCAMPO

IPC分类号： H01L31/036 ,  C23C14/06 ,  H01L51/42 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0725 ,  H01L31/18 ,  H01L51/00

摘要： The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.