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公开(公告)号：US20220293821A1
公开(公告)日：2022-09-15
申请号：US17197493
申请日：2021-03-10
发明人： Michael Chudzik , Michel Khoury , Max Batres
摘要： Exemplary processing methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The methods may further include forming first, second, and third, gallium-and-nitrogen-containing regions on the nucleation layer. The first gallium-and-nitrogen-containing region may be porosified, without porosifying the second and third gallium-and-nitrogen containing regions. The methods may still further include forming a first active region on the porosified first gallium-and-nitrogen-containing region, and a second active region on the unporosified second gallium-and-nitrogen-containing region. The methods may yet also include forming a third active region on the unporosified third gallium- and-nitrogen-containing region.
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公开(公告)号：US20240247407A1
公开(公告)日：2024-07-25
申请号：US18586297
申请日：2024-02-23
发明人： Michael Chudzik , Max Batres , Michel Khoury
CPC分类号： C30B29/406 , C30B33/08 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/0075 , C30B25/02
摘要： Exemplary methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The exemplary methods may further include forming at least one gallium nitride (GaN)-containing region on the nucleation layer, and forming an indium-gallium-nitride (InGaN)-containing layer on the GaN-containing region. A porosified region may be formed on a portion of at least one of the GaN-containing region and the InGaN-containing layer, and an active region may be formed on the porosified region. In embodiments, the porosified region may be characterized by a void fraction of greater than or about 20 vol. %. In further embodiments, the active region may include a greater mole percentage (mol. %) indium than the porosified region or the GaN-containing region. In still further embodiments, the active region may characterized by a peak light emission at a wavelength of greater than or about 620 nm.
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公开(公告)号：US11837683B2
公开(公告)日：2023-12-05
申请号：US17197493
申请日：2021-03-10
发明人： Michael Chudzik , Michel Khoury , Max Batres
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0093 , H01L33/08 , H01L33/10 , H01L33/16 , H01L33/18
摘要： Exemplary processing methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The methods may further include forming first, second, and third, gallium-and-nitrogen-containing regions on the nucleation layer. The first gallium-and-nitrogen-containing region may be porosified, without porosifying the second and third gallium-and-nitrogen containing regions. The methods may still further include forming a first active region on the porosified first gallium-and-nitrogen-containing region, and a second active region on the unporosified second gallium-and-nitrogen-containing region. The methods may yet also include forming a third active region on the unporosified third gallium-and-nitrogen-containing region.
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公开(公告)号：US20220285584A1
公开(公告)日：2022-09-08
申请号：US17195271
申请日：2021-03-08
发明人： Michel Khoury , Lan Yu , Michael Chudzik , Max Batres
摘要： Exemplary processing methods of forming a semiconductor structure may include forming subpixels on a substrate. Each of the subpixels may include a gallium-and-nitrogen-containing layer formed on an exposed portion of a nucleation layer on the substrate. The subpixels may further include a porosified region formed on or in the gallium-and-nitrogen-containing region, and an active region formed on the porosified region. The active region may include an indium-gallium-and-nitrogen-containing material. The processing methods may further include forming a first reflection layer around one of the subpixels, wherein the first reflection layer includes a first metal layer. The methods may additionally include forming a second reflection layer around another of the subpixels, wherein the second reflection layer includes a second metal that is different than the first metal.
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公开(公告)号：US20220259766A1
公开(公告)日：2022-08-18
申请号：US17176367
申请日：2021-02-16
发明人： Michael Chudzik , Max Batres , Michel Khoury
摘要： Exemplary methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The exemplary methods may further include forming at least one gallium nitride (GaN)-containing region on the nucleation layer, and forming an indium-gallium-nitride (InGaN)-containing layer on the GaN-containing region. A porosified region may be formed on a portion of at least one of the GaN-containing region and the InGaN-containing layer, and an active region may be formed on the porosified region. In embodiments, the porosified region may be characterized by a void fraction of greater than or about 20 vol. %. In further embodiments, the active region may include a greater mole percentage (mol. %) indium than the porosified region or the GaN-containing region. In still further embodiments, the active region may characterized by a peak light emission at a wavelength of greater than or about 620 nm.
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