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公开(公告)号：US5166428A
公开(公告)日：1992-11-24
申请号：US836588
申请日：1992-02-18
IPC分类号： C07C391/00 , C07C391/02 , C07C395/00
CPC分类号： C07C395/00 , C07C391/00 , C07C391/02
摘要： Methods for the preparation of a tellurium or selenium compound of formula Ra M Rb wherein M is tellurium or selenium and Ra and Rb are different C.sub.1-20 alkyl, alkenyl or aryl groups are provided in which a compound of formula (Ra).sub.2 M.sub.2 is reacted with a compound of formula (Rb).sub.2 M in each compound M being the same. Compounds of formula RaMMRb may also be isolated as an intermediate. Ra M Rb compounds are useful as precursors for metal organic vapor phase epitaxy processes.
摘要翻译： 制备式Ra M Rb的碲或硒化合物的方法，其中M为碲或硒，Ra和Rb为不同的C1-20烷基，烯基或芳基，其中式（Ⅹ）2M2的化合物反应 在每个化合物M中与式（Rb）2M化合物相同。 式RaMMRb的化合物也可以作为中间体分离。 Ra M Rb化合物可用作金属有机气相外延工艺的前体。
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公开(公告)号：US4650539A
公开(公告)日：1987-03-17
申请号：US430620
申请日：1982-09-30
IPC分类号： C23C14/14 , C23C16/18 , C23C16/30 , C30B25/02 , H01L31/0264 , H01L31/10 , H01L31/18 , C23C13/08 , H01L21/04 , C04B35/00
CPC分类号： C23C16/45561 , C30B25/02 , C30B29/48 , C01P2002/52 , C01P2004/84 , Y10S117/906
摘要： A layer of Cd.sub.x Hg.sub.1-x Te is grown on the surface of a substrate by decomposing alkyls of cadmium and telluride in a mercury atmosphere. The substrate is placed in a vessel containing a mercury bath with the vessel and bath at a suitable pressure and a temperature below the alkyl decomposition temperature. Hydrogen is passed through bubblers separately containing alkyls of cadmium, telluride and, if required, a dopant into the vessel. The substrate is independently heated above the temperature of the vessel so that the alkyls decompose on the substrate. The substrate may be CdTe, a II-VI compound or mixed II-VI alloy. The alkyls may be dimethyl cadmium, diethyl cadmium, dipropyl cadmium, dimethyl telluride, diethyl telluride, dipropyl telluride, dibutyl telluride etc., or hydrogen substituted tellurium alkyls such as hydrogen ethyl telluride etc.
摘要翻译： 通过在汞气氛中分解镉和碲化物的烷基，在衬底的表面上生长CdxHg1-xTe层。 将衬底置于含有汞浴的容器中并在合适的压力和低于烷基分解温度的温度下加入浴。 氢气分别通过含有镉，碲化物的烷基和必要时的掺杂剂进入容器的鼓泡器。 将衬底独立地加热到容器的温度以上，使烷基在衬底上分解。 基底可以是CdTe，II-VI化合物或混合的II-VI合金。 烷基可以是二甲基镉，二乙基镉，二丙基镉，二甲基碲化物，二乙基碲化物，二丙基碲化物，二丁基碲化物等，或氢取代的碲烷基，如氢乙基碲化物等。
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公开(公告)号：US4599150A
公开(公告)日：1986-07-08
申请号：US668686
申请日：1984-11-06
申请人： John B. Mullin , Arthur K. Holliday , David J. Cole-Hamilton , Anthony C. Jones , Neil D. Gerrard
发明人： John B. Mullin , Arthur K. Holliday , David J. Cole-Hamilton , Anthony C. Jones , Neil D. Gerrard
摘要： A method of producing an adduct of an organometallic compound M(R.sup.1).sub.3 where M is either indium or gallium and (R.sup.1).sub.3 represents a plurality of organic radicals which may be the same or different, preferably methyl or ethyl groups, comprising electrolysing, using a sacrificial anode of the metal M, a solution containing components 1 and 2 as follows:component 1: one or more organomagnesium halide compounds R.sup.1 MgX where X is a halide radical selected from Cl, Br and I; where R.sup.1 represents one of the groups contained in (R.sup.1).sub.3 ;component 2: a polar aprotic liquid which is a solvent for component 1, e.g. tetrahydrofuran, diethyl ether, di-isopentyl ether, di-n-butyl ether, diphenyl ether or anisole.Preferably, the solution electrolysed additionally contains a third component, component 3, which is one or more organic halides R.sup.1 X.sub.A, where R.sup.1 is one of the groups contained in (R.sup.1).sub.3, X.sub.A is a halide radical preferably the same as X, the polar aprotic liquid being a solvent also for component 3.
摘要翻译： 制备M为铟或镓的有机金属化合物M（R1）3的加合物的方法，（R1）3表示多个可以相同或不同的有机基团，优选甲基或乙基，包括电解， 使用金属M的牺牲阳极，含有组分1和2的溶液如下：组分1：一种或多种有机卤化镁化合物R1MgX，其中X是选自Cl，Br和I的卤化物基团; 其中R1表示（R1）3中所含的基团之一; 组分2：作为组分1的溶剂的极性非质子液体，例如 四氢呋喃，二乙醚，二异戊基醚，二正丁基醚，二苯醚或苯甲醚。 优选地，电解溶液另外含有第三组分，组分3，其为一种或多种有机卤化物R1XA，其中R1是（R1）3中所含的基团之一，XA是卤素基团，优选与X相同，极性 非质子液体也是组分3的溶剂。
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4.发明授权Preparation of adducts which may be used in the preparation of compound semiconductor materials 失效可用于制备化合物半导体材料的加合物的制备
公开(公告)号：US4464233A
公开(公告)日：1984-08-07
申请号：US443733
申请日：1982-11-22
摘要： A method of producing an adduct of an organometallic compound M.sup.1 (R.sup.1).sub.x, where M.sup.1 is a Group II or Group III metallic element and R.sup.1).sub.x represents a plurality of organic radicals, which may be the same or different, x being an integer equal to the valency of M.sup.1, comprises electrolysing, using a sacrificial anode of the metal M.sup.1, a solution containing components A, B and C as follows:A: a magnesium compound MgR.sub.2.sup.1 ;B: a readily ionizable support electrolyte providing relatively large anions and cations;C: a polar aprotic liquid which is a solvent for both components A and B; the metal M.sup.1 being selected from the group consisting of: indium, gallium, cadmium.
摘要翻译： 制备有机金属化合物M1（R1）x的加合物的方法，其中M1是II族或III族金属元素，R1）x表示多个有机基团，其可以相同或不同，x是整数 等于M1的化合价，包括使用金属M1的牺牲阳极电解，含有组分A，B和C的溶液如下：A：镁化合物MgR 21; B：提供较大阴离子和阳离子的容易电离的支持电解质; C：极性非质子液体，它们是组分A和B两者的溶剂; 金属M1选自：铟，镓，镉。
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公开(公告)号：US5117021A
公开(公告)日：1992-05-26
申请号：US536579
申请日：1990-07-31
IPC分类号： C07C391/00 , C07C395/00
CPC分类号： C07C395/00 , C07C391/00
摘要： Tellurium and selenium alkyls are purified by thermal dissociation of the adduct of the compound with a Group IB or IIB metal.
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公开(公告)号：US4604473A
公开(公告)日：1986-08-05
申请号：US620256
申请日：1984-06-13
IPC分类号： C07F5/00
CPC分类号： C07F5/00
摘要： A method of producing a trialkyl gallium compound (R.sub.A).sub.3 Ga, where R.sub.A is selected from methyl and ethyl, includes the step of reacting a gallium trihalide with a Grignard reagent of formula R.sub.A Mg Q, where Q is a halogen, the reaction being carried out in the presence of an ether of the formula R.sub.1 R.sub.2 O having a boiling point at least 50 Celsius degrees above that of the trialkyl gallium compound (R.sub.A).sub.3 Ga, wherein R.sub.1 and R.sub.2 are organic radicals at least one of which has at least 5 carbon atoms.The organic radicals R.sub.1 and R.sub.2 may be aromatic and/or aliphatic radicals. They are preferably alkyl or phenyl radicals. Preferably R.sub.1 R.sub.2 O is an ether having a boiling point more than 100.degree. C. above that of the trialkyl gallium compound. The radicals R.sub.1 and R.sub.2 may each independently have from 1 to 14 carbon atoms but preferably together R.sub.1 and R.sub.2 have between seven and twelve carbon atoms inclusive.Desirably, R.sub.1 R.sub.2 O is di-isopentyl ether (3,3-dimethylpropyl) ether. Other examples of R.sub.1 R.sub.2 O are diphenyl ether and anisole (methylphenyl ether). Preferably, Q is iodine and the gallium trihalide is a chloride.
摘要翻译： 制备RA选自甲基和乙基的三烷基镓化合物（RA）3Ga的方法包括使三卤化镓与式RA Mg Q的格氏试剂反应的步骤，其中Q是卤素，反应进行 在具有比三烷基镓化合物（RA）3Ga的沸点高至少50摄氏度的式R 1 R 2 O的醚存在下，其中R 1和R 2是至少一个具有至少5个碳原子的有机基团 。 有机基团R 1和R 2可以是芳族和/或脂族基团。 它们优选为烷基或苯基。 R1R2O优选为沸点比三烷基镓化合物高100℃以上的醚。 基团R 1和R 2可各自独立地具有1至14个碳原子，但优选R 1和R 2一起包括7至12个碳原子。 理想地，R1R2O是二异戊基醚（3,3-二甲基丙基）醚。 R1R2O的其它实例是二苯基醚和苯甲醚（甲基苯基醚）。 优选地，Q是碘，并且三卤化镓是氯化物。
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公开(公告)号：US4950621A
公开(公告)日：1990-08-21
申请号：US795447
申请日：1985-11-06
申请人： Stuart J. Irvine , John B. Mullin , Jean Giess
发明人： Stuart J. Irvine , John B. Mullin , Jean Giess
IPC分类号： C30B25/02 , C30B25/10 , C30B29/40 , C30B29/48 , H01L21/365
CPC分类号： C30B25/02 , C30B25/105 , C30B29/40 , C30B29/48 , H01L21/02411 , H01L21/02562 , H01L21/02573 , H01L21/0262 , Y10S148/048 , Y10S148/064 , Y10S148/094
摘要： A method of growing an epitaxial crystalline layer on a substrate which comprises the steps of(a) providing in the reaction zone of a reaction vessel a heated substrate(b) establishing a gas stream, provided by a carrier gas which gas stream comprises at least 50% by volume of a gas which suppresses the homogeneous nucleation of particles in the vapor phase which contains, in the vapor phase, at least one alkyl of an element selected from Group 15 and Group 16 of the Periodic Table,(c) passing the gas stream through the reaction zone into contact with the heated substrate, and(d) irradiating at least a major part of the surface of the substrate with electromagnetic radiation to provide photolytic decomposition of the at least one alkyl and consequential epitaxial deposition of the layer containing the said element across at least a major part of the surface of the substrate.
摘要翻译： 一种在衬底上生长外延晶体层的方法，其包括以下步骤：（a）在反应区的反应区中提供加热衬底（b），建立由载气提供的气流，该气流至少包括 50体积％的气体，其抑制在汽相中含有至少一种选自元素周期表第15族和第16族的元素的至少一种烷基的气相中颗粒的均匀成核，（c）使 通过反应区的气流与加热的基底接触，以及（d）用电磁辐射照射基底的表面的至少大部分，以提供含有至少一种烷基和伴随的外延沉积的层的光解分解 所述元件穿过衬底表面的至少大部分。
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公开(公告)号：US4812586A
公开(公告)日：1989-03-14
申请号：US948348
申请日：1987-01-27
申请人： John B. Mullin , John C. Hamilton , Elisabeth D. Orrell , Philip R. Jacobs , Deodattta V. Shenai-Khatkhate
发明人： John B. Mullin , John C. Hamilton , Elisabeth D. Orrell , Philip R. Jacobs , Deodattta V. Shenai-Khatkhate
摘要： A method of preparing high purity dimethyl cadmium or dimethyl zinc suitable for use in the deposition of Group II-VI epitaxial layers, which consists of forming an adduct of the metal alkyl with a non-chelating tertiary amine containing at least two tertiary amino groups per amine molecule, and subsequently dissociating the adduct to liberate the metal alkyl as a vapor. The adducts formed during the preparative method are found to dissociate readily on heating and yet are substantially involatile and so do not contaminate the liberated metal alkyl. A preferred amine suitable for use in the preparative method is 4,4' bipyridyl.
摘要翻译： PCT No.PCT / GB86 / 00197 Sec。 371日期1987年1月27日第 102（e）日期1987年1月27日PCT提交1986年4月9日PCT公布。 出版物WO86 / 06071 1986年10月23日的日期。一种制备适用于沉积II-VI族外延层的高纯度二甲基镉或二甲基锌的方法，其包括将金属烷基加成物与非螯合叔胺 每个胺分子至少两个叔氨基，随后解离加合物以释放作为蒸气的金属烷基。 发现在制备方法期间形成的加合物在加热时容易解离，并且基本上是非挥发性的，因此不会污染释放的金属烷基。 适用于制备方法的优选胺是4,4'-联吡啶。
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公开(公告)号：US5091570A
公开(公告)日：1992-02-25
申请号：US488076
申请日：1990-07-31
IPC分类号： C07C391/00 , C07C395/00
CPC分类号： C07C395/00 , C07C391/00
摘要： Tellurium and selenium dialkyls are prepared by reacting the corresponding tetrahalide with a Group I metal alkyl.
摘要翻译： PCT No.PCT / GB88 / 01065 Sec。 371日期1990年7月31日第 102（e）日期1990年7月31日PCT提交1988年12月2日PCT公布。 出版物WO89 / 05292 日期：1989年6月15日。通过使相应的四卤化物与第I族金属烷基反应来制备碲和硒二烷基。
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10.发明授权
公开(公告)号：US4566918A
公开(公告)日：1986-01-28
申请号：US641483
申请日：1984-08-16
申请人： Stuart J. C. Irvine , John B. Mullin , Jean Giess
发明人： Stuart J. C. Irvine , John B. Mullin , Jean Giess
IPC分类号： C23C16/30 , H01L21/365 , H01L29/22 , H01L31/0248 , H01L31/0296 , H01L31/09 , H01L31/18 , H01L21/36 , H01L21/477
CPC分类号： C23C16/45561 , C23C16/306 , H01L21/0237 , H01L21/02411 , H01L21/0248 , H01L21/02507 , H01L21/02562 , H01L21/02573 , H01L21/0262 , H01L29/2203 , H01L31/02966 , H01L31/1832 , Y10S148/063 , Y10S148/064 , Y10S148/16
摘要： A layer of Cd.sub.x Hg.sub.1-x Te is grown on a substrate by growing layers of HgTe t.sub.1 thick, and CdTe t.sub.2 thick alternately. The thicknesses t.sub.1 and t.sub.2 combined are less than 0.5 .mu.m so that interdiffusion occurs during growth to give a single layer of Cd.sub.x Hg.sub.1-x Te. The HgTe layers are grown by flowing a Te alkyl into a vessel containing the substrate and filled with an Hg atmosphere by an Hg bath. The CdTe layers are grown by flowing of Cd alkyl into the vessel where it combines preferentially with the Te on the substrate. Varying the ratio of t.sub.1 to t.sub.2 varies the value of x. Dopants such as alkyls or hydrides of Al, Ga, As and P, or Si, Ge, As and P respectively may be introduced to dope the growing layer.
摘要翻译： CdxHg1-xTe层通过生长HgTe t1厚层和CdTe t2交替厚度生长在衬底上。 组合的厚度t1和t2小于0.5μm，从而在生长期间发生相互扩散，得到单层CdxHg1-xTe。 通过将Te烷基流入含有底物的容器中并通过Hg浴填充Hg气氛来生长HgTe层。 CdTe层通过将Cd烷基流入容器中而生长，其中其优先与衬底上的Te结合。 改变t1到t2的比率会改变x的值。 可以引入掺杂剂如Al，Ga，As和P，或Si，Ge，As和P的烷基或氢化物以掺杂生长层。
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