公开(公告)号：US4566918A

公开(公告)日：1986-01-28

申请号：US641483

申请日：1984-08-16

申请人： Stuart J. C. Irvine ,  John B. Mullin ,  Jean Giess

发明人： Stuart J. C. Irvine ,  John B. Mullin ,  Jean Giess

IPC分类号： C23C16/30 ,  H01L21/365 ,  H01L29/22 ,  H01L31/0248 ,  H01L31/0296 ,  H01L31/09 ,  H01L31/18 ,  H01L21/36 ,  H01L21/477

CPC分类号： C23C16/45561 ,  C23C16/306 ,  H01L21/0237 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02507 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/2203 ,  H01L31/02966 ,  H01L31/1832 ,  Y10S148/063 ,  Y10S148/064 ,  Y10S148/16

摘要： A layer of Cd.sub.x Hg.sub.1-x Te is grown on a substrate by growing layers of HgTe t.sub.1 thick, and CdTe t.sub.2 thick alternately. The thicknesses t.sub.1 and t.sub.2 combined are less than 0.5 .mu.m so that interdiffusion occurs during growth to give a single layer of Cd.sub.x Hg.sub.1-x Te. The HgTe layers are grown by flowing a Te alkyl into a vessel containing the substrate and filled with an Hg atmosphere by an Hg bath. The CdTe layers are grown by flowing of Cd alkyl into the vessel where it combines preferentially with the Te on the substrate. Varying the ratio of t.sub.1 to t.sub.2 varies the value of x. Dopants such as alkyls or hydrides of Al, Ga, As and P, or Si, Ge, As and P respectively may be introduced to dope the growing layer.

摘要翻译： CdxHg1-xTe层通过生长HgTe t1厚层和CdTe t2交替厚度生长在衬底上。 组合的厚度t1和t2小于0.5μm，从而在生长期间发生相互扩散，得到单层CdxHg1-xTe。 通过将Te烷基流入含有底物的容器中并通过Hg浴填充Hg气氛来生长HgTe层。 CdTe层通过将Cd烷基流入容器中而生长，其中其优先与衬底上的Te结合。 改变t1到t2的比率会改变x的值。 可以引入掺杂剂如Al，Ga，As和P，或Si，Ge，As和P的烷基或氢化物以掺杂生长层。

公开(公告)号：US20070235653A1

公开(公告)日：2007-10-11

申请号：US11628871

申请日：2005-08-01

申请人： Louise Buckle ,  John Cairns ,  Jean Giess ,  Neil Gordon ,  Andrew Graham ,  Janet Hails ,  David Hall ,  Colin Hollier ,  Graham Pryce ,  Andrew Wright

发明人： Louise Buckle ,  John Cairns ,  Jean Giess ,  Neil Gordon ,  Andrew Graham ,  Janet Hails ,  David Hall ,  Colin Hollier ,  Graham Pryce ,  Andrew Wright

IPC分类号： C30B29/48 ,  H01L27/146 ,  H01L31/18

CPC分类号： C30B25/183 ,  C30B23/02 ,  C30B25/02 ,  C30B29/48 ,  H01L27/14696 ,  H01L31/1832 ,  H01L31/1836 ,  Y02E10/50

摘要： This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the silicon substrate by first growing one or more buffer layers by MBE and then growing the CMT by MOVPE. The growth windows may be defined by masking the area outside of the growth windows. Growth within the growth windows is crystalline whereas any growth outside the growth windows is polycrystalline and can be removed by etching. The invention offers a method of growing CMT structures directly on integrated circuits removing the need for hybridisation.

摘要翻译： 本发明涉及在图案化硅上制造碲化汞碲化镉（CMT），特别涉及带有集成电路的硅衬底上的CMT生长。 本发明的方法包括通过首先通过MBE生长一个或多个缓冲层，然后通过MOVPE生长CMT，在硅衬底上选择的生长窗中生长CMT。 生长窗口可以通过掩蔽生长窗口之外的区域来定义。 生长窗内的生长是结晶的，而在生长窗外部的生长是多晶的并且可以通过蚀刻去除。 本发明提供了一种在集成电路上直接生长CMT结构的方法，从而消除了对杂交的需要。

公开(公告)号：US08021914B2

公开(公告)日：2011-09-20

申请号：US10594393

申请日：2005-04-05

申请人： Janet E Hails ,  Jean Giess ,  John W Cairns ,  Andrew Graham ,  Louise Buckle ,  David J Hall ,  Neil T Gordon

发明人： Janet E Hails ,  Jean Giess ,  John W Cairns ,  Andrew Graham ,  Louise Buckle ,  David J Hall ,  Neil T Gordon

IPC分类号： H01L21/00

CPC分类号： C30B25/02 ,  C30B23/02 ,  C30B29/46 ,  H01L31/1032 ,  H01L31/1832

摘要： A method of manufacture of cadmium mercury telluride (CMT) is disclosed. The method involves growing one or more buffer layers on a substrate by molecular beam epitaxy (MBE). Subsequently at least one layer of cadmium mercury telluride, Hg1-xCdxTe where x is between 0 and 1 inclusive, is grown by metal organic vapour phase epitaxy (MOVPE). The use of MBE to grow buffer layers allows a range of substrates to be used for CMT growth. The MBE buffer layers provide the correct orientation for later MOVPE growth of CMT and also prevent chemical contamination of the CMT and attack of the substrate during MOVPE. The method also allows for device processing of the CMT layers to be performed with further MOVPE growth of crystalline CMT layers and/or passivation layers. The invention also relates to new devices formed by the method.

摘要翻译： 公开了一种制造碲化汞镉（CMT）的方法。 该方法包括通过分子束外延（MBE）在衬底上生长一个或多个缓冲层。 随后，通过金属有机气相外延（MOVPE）生长至少一层碲化汞镉Hg（其中x在0和1之间）在0和1之间的Hg1-xCdxTe。 使用MBE来生长缓冲层可以使一系列底物用于CMT生长。 MBE缓冲层为CMT的后续MOVPE生长提供了正确的方向，并且还防止了在MOVPE期间CMT的化学污染和基材的侵蚀。 该方法还允许通过结晶CMT层和/或钝化层的进一步MOVPE生长来执行CMT层的器件处理。 本发明还涉及通过该方法形成的新装置。

公开(公告)号：US4950621A

公开(公告)日：1990-08-21

申请号：US795447

申请日：1985-11-06

申请人： Stuart J. Irvine ,  John B. Mullin ,  Jean Giess

发明人： Stuart J. Irvine ,  John B. Mullin ,  Jean Giess

IPC分类号： C30B25/02 ,  C30B25/10 ,  C30B29/40 ,  C30B29/48 ,  H01L21/365

CPC分类号： C30B25/02 ,  C30B25/105 ,  C30B29/40 ,  C30B29/48 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  Y10S148/048 ,  Y10S148/064 ,  Y10S148/094

摘要： A method of growing an epitaxial crystalline layer on a substrate which comprises the steps of(a) providing in the reaction zone of a reaction vessel a heated substrate(b) establishing a gas stream, provided by a carrier gas which gas stream comprises at least 50% by volume of a gas which suppresses the homogeneous nucleation of particles in the vapor phase which contains, in the vapor phase, at least one alkyl of an element selected from Group 15 and Group 16 of the Periodic Table,(c) passing the gas stream through the reaction zone into contact with the heated substrate, and(d) irradiating at least a major part of the surface of the substrate with electromagnetic radiation to provide photolytic decomposition of the at least one alkyl and consequential epitaxial deposition of the layer containing the said element across at least a major part of the surface of the substrate.

摘要翻译： 一种在衬底上生长外延晶体层的方法，其包括以下步骤：（a）在反应区的反应区中提供加热衬底（b），建立由载气提供的气流，该气流至少包括 50体积％的气体，其抑制在汽相中含有至少一种选自元素周期表第15族和第16族的元素的至少一种烷基的气相中颗粒的均匀成核，（c）使 通过反应区的气流与加热的基底接触，以及（d）用电磁辐射照射基底的表面的至少大部分，以提供含有至少一种烷基和伴随的外延沉积的层的光解分解 所述元件穿过衬底表面的至少大部分。

公开(公告)号：US07892879B2

公开(公告)日：2011-02-22

申请号：US11628871

申请日：2005-08-01

申请人： Louise Buckle ,  John W Cairns ,  Jean Giess ,  Neil T Gordon ,  Andrew Graham ,  Janet E Hails ,  David J Hall ,  Colin J Hollier ,  Graham J Pryce ,  Andrew J Wright

发明人： Louise Buckle ,  John W Cairns ,  Jean Giess ,  Neil T Gordon ,  Andrew Graham ,  Janet E Hails ,  David J Hall ,  Colin J Hollier ,  Graham J Pryce ,  Andrew J Wright

IPC分类号： H01L29/22

CPC分类号： C30B25/183 ,  C30B23/02 ,  C30B25/02 ,  C30B29/48 ,  H01L27/14696 ,  H01L31/1832 ,  H01L31/1836 ,  Y02E10/50

摘要： This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the silicon substrate by first growing one or more buffer layers by MBE and then growing the CMT by MOVPE. The growth windows may be defined by masking the area outside of the growth windows. Growth within the growth windows is crystalline whereas any growth outside the growth windows is polycrystalline and can be removed by etching. The invention offers a method of growing CMT structures directly on integrated circuits removing the need for hybridisation.

摘要翻译： 本发明涉及在图案化硅上制造碲化汞碲化镉（CMT），特别涉及带有集成电路的硅衬底上的CMT生长。 本发明的方法包括通过首先通过MBE生长一个或多个缓冲层，然后通过MOVPE生长CMT，在硅衬底上选择的生长窗中生长CMT。 生长窗口可以通过掩蔽生长窗口之外的区域来定义。 生长窗内的生长是结晶的，而在生长窗外部的生长是多晶的并且可以通过蚀刻去除。 本发明提供了一种在集成电路上直接生长CMT结构的方法，从而消除了对杂交的需要。

公开(公告)号：US20070197022A1

公开(公告)日：2007-08-23

申请号：US10594393

申请日：2005-04-05

申请人： Janet Hails ,  Jean Giess ,  John Cairns ,  Andrew Graham ,  Louise Buckle ,  David Hall ,  Neil Gordon

发明人： Janet Hails ,  Jean Giess ,  John Cairns ,  Andrew Graham ,  Louise Buckle ,  David Hall ,  Neil Gordon

IPC分类号： H01L21/4763

CPC分类号： C30B25/02 ,  C30B23/02 ,  C30B29/46 ,  H01L31/1032 ,  H01L31/1832

摘要： A method of manufacture of cadmium mercury telluride (CMT) is disclosed. The method involves growing one or more buffer layers on a substrate by molecular beam epitaxy (MBE). Subsequently at least one layer of cadmium mercury telluride, Hg1-xCdxTe where x is between 0 and 1 inclusive, is grown by metal organic vapour phase epitaxy (MOVPE) The use of MBE to grow buffer layers allows a range of substrates to be used for CMT growth. The MBE buffer layers provide the correct orientation for later MOVPE growth of CMT and also prevent chemical contamination of the CMT and attack of the substrate during MOVPE. The method also allows for device processing of the CMT layers to be performed with further MOVPE growth of crystalline CMT layers and/or passivation layers. The invention also relates to new devices formed by the method.

摘要翻译： 公开了一种制造碲化汞镉（CMT）的方法。 该方法包括通过分子束外延（MBE）在衬底上生长一个或多个缓冲层。 随后，通过金属有机气相外延（MOVPE）生长至少一层碲化汞镉Hg，其中x在0和1之间，其中x在0和1之间， ）使用MBE来生长缓冲层允许一系列底物用于CMT生长。 MBE缓冲层为CMT的后续MOVPE生长提供了正确的方向，并且还防止了在MOVPE期间CMT的化学污染和基材的侵蚀。 该方法还允许通过结晶CMT层和/或钝化层的进一步MOVPE生长来执行CMT层的器件处理。 本发明还涉及通过该方法形成的新装置。