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    Method for growth of in situ p-type semiconductor films using a group V flux
    2.
    发明授权
    Method for growth of in situ p-type semiconductor films using a group V flux 失效
    使用V族通量生长原位p型半导体膜的方法

    公开(公告)号：US5976958A

    公开(公告)日：1999-11-02

    申请号：US965390

    申请日：1997-11-06

    申请人： Rajesh D. Rajavel ,  Owen K. Wu ,  Peter D. Brewer ,  Terence J. deLyon

    发明人： Rajesh D. Rajavel ,  Owen K. Wu ,  Peter D. Brewer ,  Terence J. deLyon

    IPC分类号： C30B23/02 ,  H01L21/363 ,  H01L21/20

    CPC分类号： C30B23/02 ,  C30B29/48 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/02579 ,  H01L21/02631

    摘要： A method of growing a p-type doped Group II-VI semiconductor film includes the steps of forming a lattice comprising a Group II material and a Group VI material and generating a first Group V flux by evaporating a solid Group V source material. The first Group V flux is then decomposed to generate a second Group V flux, which is, in turn, provided to the lattice to p-type dope the growing film. The Group V source material may by arsenic such that the second Group V flux may predominantly include dimeric arsenic decomposed from tetrameric arsenic to improve the incorporation of arsenic into the Group VI sublattice of the lattice.

    摘要翻译： 生长p型掺杂的II-VI族半导体膜的方法包括以下步骤：形成包含II族材料和VI族材料的晶格，并通过蒸发固体V族源材料产生第一V族熔剂。 然后第一组V磁通被分解以产生第二组V磁通，其又提供给p型掺杂生长膜的晶格。 V族源材料可以通过砷使得第二V族通量主要包括从四聚砷分解的二聚砷，以改善砷掺入到晶格的第VI族亚晶格中。

    Infrared detector
    3.
    发明授权
    Infrared detector 有权
    红外探测器

    公开(公告)号：US08969986B1

    公开(公告)日：2015-03-03

    申请号：US13036403

    申请日：2011-02-28

    申请人： Daniel Yap ,  Rajesh D. Rajavel ,  Sarabjit Mehta ,  Hasan Sharifi

    发明人： Daniel Yap ,  Rajesh D. Rajavel ,  Sarabjit Mehta ,  Hasan Sharifi

    IPC分类号： H01L31/0232

    CPC分类号： H01L31/1844 ,  H01L27/14685 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/1892 ,  Y02E10/50

    摘要： An infrared photo-detector with multiple discrete regions of a first absorber material. These regions may have geometric shapes with sloped sidewalls. The detector also may include a second absorber region comprising a second absorber material that absorbs light of a shorter wavelength than the light absorbed by the multiple discrete absorber regions of the first absorber material. The geometric shapes may extend only through the first absorber material. Alternatively, the geometric shapes may extend partially into the second absorber region. The detector has a metal reflector coupled to the multiple discrete absorber regions. The detector also has a substrate containing the discrete absorber regions and the second absorber region. The substrate can further include geometric shaped features etched into the substrate, with those features formed on the side of the substrate opposite the side containing the discrete absorber regions and the second absorber region.

    摘要翻译： 具有第一吸收材料的多个离散区域的红外光电检测器。 这些区域可以具有倾斜侧壁的几何形状。 检测器还可以包括第二吸收体区域，该第二吸收体区域吸收比由第一吸收体材料的多个分立吸收体区域吸收的光更短波长的光的第二吸收体材料。 几何形状可仅延伸穿过第一吸收材料。 或者，几何形状可以部分地延伸到第二吸收体区域中。 检测器具有耦合到多个分立吸收体区域的金属反射器。 检测器还具有包含离散吸收区域和第二吸收区域的基板。 衬底还可以包括蚀刻到衬底中的几何形状特征，其中这些特征形成在衬底的与包含离散吸收体区域和第二吸收体区域的侧面相反的一侧。

    Bipolar transistors with low parasitic losses
    5.
    发明授权
    Bipolar transistors with low parasitic losses 失效
    具有低寄生损耗的双极晶体管

    公开(公告)号：US07569872B1

    公开(公告)日：2009-08-04

    申请号：US11313865

    申请日：2005-12-20

    申请人： Rajesh D. Rajavel ,  David H. Chow ,  Tahir Hussain ,  Yakov Royter

    发明人： Rajesh D. Rajavel ,  David H. Chow ,  Tahir Hussain ,  Yakov Royter

    IPC分类号： H01L29/739 ,  H01L31/072

    CPC分类号： H01L29/7371 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66318

    摘要： Bipolar junction transistors (BJTs) and single or double heterojunction bipolar transistors with low parasitics, and methods for making the same is presented. A transistor is fabricated such that the collector region underneath a base contact area is deactivated. This results in a drastic reduction of the base-collector parasitic capacitance, Cbc. An embodiment of the present invention provides a transistor architecture for which the base contact area can be decoupled from the collector and hence allows for dramatic reduction in the parasitics of transistors.

    摘要翻译： 提出了双极结晶体管（BJT）和具有低寄生效应的单或双异质结双极晶体管及其制造方法。 制造晶体管使得基极接触区域下面的集电极区域被去激活。 这导致基极集电极寄生电容Cbc的急剧减小。 本发明的一个实施例提供一种晶体管架构，其基极接触区域可以与集电极分离，因此允许显着降低晶体管的寄生效应。

    Method and apparatus for allowing formation of self-aligned base contacts
    6.
    发明授权
    Method and apparatus for allowing formation of self-aligned base contacts 失效
    允许形成自对准基底触点的方法和装置

    公开(公告)号：US07229874B2

    公开(公告)日：2007-06-12

    申请号：US10778525

    申请日：2004-02-12

    申请人： Tahir Hussain ,  Rajesh D. Rajavel ,  Mary C. Montes

    发明人： Tahir Hussain ,  Rajesh D. Rajavel ,  Mary C. Montes

    IPC分类号： H01L21/8249 ,  H01L21/336 ,  H01L21/331

    CPC分类号： H01L29/66318 ,  H01L29/41708 ,  H01L29/7371

    摘要： A method and apparatus for depositing self-aligned base contacts where over-etching the emitter sidewall to undercut the emitter contact is not needed. A semiconductor structure has a T-shaped emitter contact that comprises a T-top and T-foot. The T-top acts as a mask for depositing the base contacts. In forming the T-top, its dimensions may be varied, thereby allowing the spacing between the base contacts and emitter to be adjusted.

    摘要翻译： 不需要用于沉积自对准基极触点的方法和装置，其中过蚀刻发射极侧壁以切割发射极接触。 半导体结构具有包括T形顶部和T形脚的T形发射体接触。 T形顶部用作沉积基部触点的掩模。 在形成T形顶部时，其尺寸可以变化，从而允许调节基座触头和发射器之间的间隔。

    Dual-band type-II superlattice detectors based on p-B-p design
    7.
    发明授权
    Dual-band type-II superlattice detectors based on p-B-p design 有权
    基于p-B-p设计的双频II型超晶格检测器

    公开(公告)号：US08847202B1

    公开(公告)日：2014-09-30

    申请号：US13351997

    申请日：2012-01-17

    申请人： Brett Z. Nosho ,  Rajesh D. Rajavel ,  Hasan Sharifi ,  Sevag Terterian

    发明人： Brett Z. Nosho ,  Rajesh D. Rajavel ,  Hasan Sharifi ,  Sevag Terterian

    IPC分类号： H01L31/00 ,  H01L31/02 ,  H01L31/109 ,  H01L31/11 ,  H01L31/065

    CPC分类号： H01L31/035236 ,  H01L31/02016 ,  H01L31/065 ,  H01L31/09 ,  H01L31/1013 ,  H01L31/109 ,  H01L31/11 ,  H01L31/18 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521

    摘要： A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is designed for a single Indium bump architecture and utilizes a T2SL barrier design that omits the traditional p-n junction region. The barrier design comprises multiple periods where each period comprises multiple monolayers doped P type. By selecting the composition, number of monolayers per period and number of periods, a transition region is created in the conduction band between a first absorber layer and a second absorber layer that allows operation at low biases (

    摘要翻译： 基于II型超晶格（T2SL）的双频带红外探测器结构已被开发和实验验证。 根据本发明的原理的结构被设计用于单个铟凸块结构并且利用省略传统p-n结区域的T2SL屏障设计。 屏障设计包括多个周期，其中每个周期包括多个单层掺杂的P型。 通过选择组合物，每个周期的单层数和周期数，在第一吸收层和第二吸收层之间的导带中产生过渡区，其允许以低偏差（对于两个带为<100mV）进行操作和显示 较长波段的暗电流密度可与使用单色检测器获得的相当。

    Methods and apparatus for three-color infrared sensors
    8.
    发明授权
    Methods and apparatus for three-color infrared sensors 有权
    三色红外传感器的方法和装置

    公开(公告)号：US08093559B1

    公开(公告)日：2012-01-10

    申请号：US12326883

    申请日：2008-12-02

    申请人： Rajesh D. Rajavel

    发明人： Rajesh D. Rajavel

    IPC分类号： G02F1/01

    CPC分类号： H01L27/14649 ,  H01L27/14694 ,  H01L31/03046 ,  H01L31/035281 ,  H01L31/1013 ,  Y02E10/544

    摘要： The present invention provides a two-terminal infrared detector capable of detecting a plurality of bands, such as three bands, over the visible and short-wave infrared bands. Detection of three colors enables one to construct composite imagery that provide significantly added contract in comparison to typical grayscale images. In some variations, the device includes multiple absorber and barrier layers that consist of distinct engineered semiconductor alloys which are closely lattice matched to InP.

    摘要翻译： 本发明提供一种能够在可见光短波红外波段上检测诸如三个波段的多个波段的双端红外探测器。 与典型的灰度图像相比，三种颜色的检测能够构建提供显着增加的合同的复合图像。 在一些变型中，该器件包括由与InP紧密匹配的不同工程化半导体合金组成的多个吸收层和阻挡层。

    Electronically tunable and reconfigurable hyperspectral photon detector
    9.
    发明授权
    Electronically tunable and reconfigurable hyperspectral photon detector 有权
    电子可调谐和可重新配置的高光谱光子检测器

    公开(公告)号：US07652252B1

    公开(公告)日：2010-01-26

    申请号：US11868915

    申请日：2007-10-08

    申请人： Rajesh D. Rajavel ,  David H. Chow ,  Andrew T. Hunter

    发明人： Rajesh D. Rajavel ,  David H. Chow ,  Andrew T. Hunter

    IPC分类号： G01J5/20

    CPC分类号： G01J3/32 ,  G01J3/2803 ,  H01L27/14652 ,  H01L31/03046 ,  H01L31/1035 ,  Y02E10/544 ,  Y02P70/521

    摘要： Electronically tunable and reconfigurable hyperspectral IR detectors and methods for making the same are presented. In one embodiment, a reconfigurable hyperspectral sensor (or detector) detects radiation from about 0.4 μm to about 2 μm and beyond. This sensor is configured to be compact, and lightweight and offers hyperspectral imaging capability while providing wavelength agility and tunability at the chip-level. That is, the sensor is used to rapidly image across diverse terrain to identify man-made objects and other anomalies in cluttered environments.

    摘要翻译： 介绍了电子可调和可重构高光谱红外探测器及其制作方法。 在一个实施例中，可重新配置的高光谱传感器（或检测器）检测约0.4μm至约2μm及以上的辐射。 该传感器配置为紧凑，重量轻，提供高光谱成像能力，同时在芯片级提供波长敏捷性和可调谐性。 也就是说，传感器用于在不同的地形上快速成像，以在杂乱的环境中识别人造物体和其他异常现象。

    Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same
    10.
    发明授权
    Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same 有权
    在外延生长层之间具有降低的界面电荷的电子器件及其制造方法

    公开(公告)号：US07531851B1

    公开(公告)日：2009-05-12

    申请号：US11713070

    申请日：2007-02-28

    申请人： Rajesh D. Rajavel ,  Mary Y. Chen ,  Steven S. Bui ,  David H. Chow ,  James Chingwei Li ,  Mehran Mokhtari ,  Marko Sokolich

    发明人： Rajesh D. Rajavel ,  Mary Y. Chen ,  Steven S. Bui ,  David H. Chow ,  James Chingwei Li ,  Mehran Mokhtari ,  Marko Sokolich

    IPC分类号： H01L31/0328

    CPC分类号： H01L29/7371 ,  H01L27/0605 ,  H01L29/0821 ,  H01L29/66318 ,  Y10S438/906

    摘要： An electronic device contains a substrate, a sub-collector supported by the substrate, an un-doped layer having a selectively implanted buried sub-collector and supported by the sub-collector, an As-based nucleation layer partially supported by the un-doped layer, a collector layer supported by the As-based nucleation layer, a base layer supported by the collector layer, an emitter layer and a base contact supported by the base layer, an emitter cap layer supported by the emitter layer, an emitter contact supported by the emitter cap layer, and a collector contact supported by the sub-collector. A method provides for selecting a first InP layer, forming an As-based nucleation layer on the first InP layer, and epitaxially growing a second InP layer on the As-based nucleation layer.

    摘要翻译： 电子器件包含衬底，由衬底支撑的子集电极，具有选择性注入的掩埋子集电极并由子集电极支撑的未掺杂层，由未掺杂的部分支撑的基于As的成核层 由As基成核层支撑的集电体层，由集电极层支撑的基极层，由基极层支撑的发射极层和基极接触，由发射极层支撑的发射极盖层，负极 由发射极盖层和由集电极支撑的集电极触点。 一种方法提供选择第一InP层，在第一InP层上形成基于As的成核层，以及在As基成核层上外延生长第二InP层。