发明授权
US08847202B1 Dual-band type-II superlattice detectors based on p-B-p design
有权
基于p-B-p设计的双频II型超晶格检测器
- 专利标题： Dual-band type-II superlattice detectors based on p-B-p design
- 专利标题（中）： 基于p-B-p设计的双频II型超晶格检测器
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申请号： US13351997申请日： 2012-01-17
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公开(公告)号： US08847202B1公开(公告)日： 2014-09-30
- 发明人: Brett Z. Nosho , Rajesh D. Rajavel , Hasan Sharifi , Sevag Terterian
- 申请人： Brett Z. Nosho , Rajesh D. Rajavel , Hasan Sharifi , Sevag Terterian
- 申请人地址： US CA Malibu
- 专利权人： HRL Laboratories, LLC
- 当前专利权人： HRL Laboratories, LLC
- 当前专利权人地址： US CA Malibu
- 代理商 Daniel R. Allemeier; George R. Rapacki
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; H01L31/02 ; H01L31/109 ; H01L31/11 ; H01L31/065
摘要：
A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is designed for a single Indium bump architecture and utilizes a T2SL barrier design that omits the traditional p-n junction region. The barrier design comprises multiple periods where each period comprises multiple monolayers doped P type. By selecting the composition, number of monolayers per period and number of periods, a transition region is created in the conduction band between a first absorber layer and a second absorber layer that allows operation at low biases (
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