Invention Grant
US09410959B2 Devices comprising coated semiconductor nanocrystal heterostructures
有权
包括涂覆的半导体纳米晶体异质结构的器件
- Patent Title: Devices comprising coated semiconductor nanocrystal heterostructures
- Patent Title (中): 包括涂覆的半导体纳米晶体异质结构的器件
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Application No.: US13594719Application Date: 2012-08-24
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Publication No.: US09410959B2Publication Date: 2016-08-09
- Inventor: Sungjee Kim , Moungi G. Bawendi
- Applicant: Sungjee Kim , Moungi G. Bawendi
- Applicant Address: US MA Cambridge
- Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- Current Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- Current Assignee Address: US MA Cambridge
- Agency: Steptoe & Johnson LLP
- Main IPC: B32B5/16
- IPC: B32B5/16 ; G01N33/58 ; B82Y10/00 ; B82Y15/00 ; B82Y20/00 ; B82Y30/00 ; C09K11/88 ; C30B7/00 ; C30B29/60 ; C30B33/00 ; H01L21/02 ; H01L29/06 ; H01L29/165 ; H01L29/205 ; H01L29/225 ; H01L29/267 ; H01L51/42
Abstract:
A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.
Public/Granted literature
- US20120319054A1 SEMICONDUCTOR NANOCRYSTALS HETEROSTRUCTURES Public/Granted day:2012-12-20
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