公开(公告)号：US20240352616A1

公开(公告)日：2024-10-24

申请号：US18635262

申请日：2024-04-15

Applicant: GlobalWafers Co., Ltd.

Inventor： Matteo Pannocchia ,  Francesca Marchese ,  Enrico Rigon

IPC: C30B15/26 ,  C30B15/00 ,  C30B15/10 ,  C30B29/06

CPC classification number: C30B15/26 ,  C30B15/002 ,  C30B15/10 ,  C30B29/06

Abstract: A computer device includes at least one processor in communication with at least one memory device. The at least one processor is programmed to: a) receive at least one image of a silicon melt of a crystal in a crucible; b) execute a model trained to segment the at least one image into different classes; c) analyze segmentation to determine a quality of the crystal; and/or d) approve or reject the crystal based upon the analysis.

公开(公告)号：US20240271318A1

公开(公告)日：2024-08-15

申请号：US18571398

申请日：2022-09-30

Applicant: XI’AN ESWIN MATERIAL TECHNOLOGY CO., LTD. ,  XI’AN ESWIN SILICON WAFER TECHNOLOGY CO., LTD.

Inventor： Fan CHEN ,  Pengju ZHANG ,  Chaochao GUO

IPC: C30B15/26 ,  C30B15/00 ,  C30B15/02 ,  C30B29/06 ,  C30B35/00

CPC classification number: C30B15/26 ,  C30B15/002 ,  C30B15/02 ,  C30B29/06 ,  C30B35/005 ,  C30B35/007

Abstract: A silicon material processing apparatus includes a feed assembly, a scanning assembly, a controller, and a loading assembly. The feed assembly is used for conveying a silicon material and includes a feeding area, a scanning area, and a loading area sequentially arranged along the conveying direction. The silicon material to be conveyed is added to the feeding assembly in the feeding area. The scanning assembly is arranged correspondingly to the scanning area and is, used for collecting silicon material information of a silicon material that is located in the scanning area. The silicon material information includes one or more of a shape characteristics and a size characteristics of the silicon material. The controller is connected with the scanning assembly and is, used for generating a loading strategy according to the silicon material information.

公开(公告)号：US20240125006A1

公开(公告)日：2024-04-18

申请号：US18276463

申请日：2022-01-26

Applicant: SHIN-ETSU HANDOTAI CO., LTD.

Inventor： Katsuyuki KITAGAWA

IPC: C30B15/26 ,  C30B15/14 ,  C30B15/30

CPC classification number: C30B15/26 ,  C30B15/14 ,  C30B15/30

Abstract: A method for detecting a surface state of a raw material melt in a crucible in single crystal production by a CZ method in which a single crystal is pulled from the raw material melt in the crucible including: photographing a predetermined same test region of the surface of the raw material melt in the crucible simultaneously in different directions with two CCD cameras to obtain measurement images; and automatically detecting, using parallax data of the measurement images from the two CCD cameras, one or more of the following: solidification timing when a state in which the raw material is completely melted becomes a state in which solidification is formed on the surface of the raw material melt; and melting complication timing when a state in which the raw material melt has solidification on the surface of the raw material melt becomes a completely melted state.

公开(公告)号：US20240026565A1

公开(公告)日：2024-01-25

申请号：US18037647

申请日：2021-10-11

Applicant: SHIN-ETSU HANDOTAI CO., LTD.

Inventor： Kosei SUGAWARA ,  Takaki IMAI ,  Masahiro AKIBA ,  Katsuyuki KITAGAWA

IPC: C30B15/26 ,  C30B29/06 ,  C30B30/04 ,  C30B15/14

CPC classification number: C30B15/26 ,  C30B29/06 ,  C30B30/04 ,  C30B15/14

Abstract: A method for measuring distance between lower end surface of heat shielding member and surface of raw material melt, the method including providing the member being located above the melt, when a silicon single crystal is pulled by the Czochralski method while a magnetic field is applied to the melt in a crucible, the method including: forming a through-hole in the member; measuring distance between the member and the melt surface, and observing position of mirror image of the through-hole with fixed point observation apparatus, the mirror image being reflected on the melt surface; then measuring a moving distance of the mirror image, and calculating distance between the member and the melt surface from a measured value and the moving distance of the mirror image, during the pulling of the crystal. The distance between the member and the melt can be precisely measured by the method.

公开(公告)号：US20230374697A1

公开(公告)日：2023-11-23

申请号：US18248072

申请日：2021-09-16

Applicant: HANWHA SOLUTIONS CORPORATION ,  HANWHA CORPORATION

Inventor： Young Jun LEE ,  Jin Sung PARK ,  Han Woong JEON

IPC: C30B15/26 ,  C30B29/06 ,  C30B15/10

CPC classification number: C30B15/26 ,  C30B29/06 ,  C30B15/10

Abstract: An energy-saving ingot growing device is disclosed. The ingot growing device according to the present invention comprises: a chamber having provided therein a crucible heated by a heat source in order to melt silicon; a side surface insulating material provided inside the chamber so as to insulate the side surface of the crucible; and an observation part provided to penetrate the chamber and the side surface insulating material so that the inside of the crucible can be observed.

公开(公告)号：US20230357950A1

公开(公告)日：2023-11-09

申请号：US18029745

申请日：2021-09-22

Applicant: SUMCO Corporation

Inventor： Yasunobu SHIMIZU ,  Susumu TAMAOKI ,  Ippei SHIMOZAKI ,  Keiichi TAKANASHI ,  Ken HAMADA

IPC: C30B15/26

CPC classification number: C30B15/26

Abstract: Please replace the Abstract contained in the application with the following replacement
Provided is a process of measuring a space between a melt surface and a seed crystal provided above a melt, a process of lowering the seed crystal based on the space and bringing the seed crystal into contact with the melt, and a process of growing a single crystal by pulling the seed crystal while maintaining contact with the melt. Images of the seed crystal and the melt surface are captured by a camera installed diagonally above the melt surface, a real-image edge approximation circle is generated by approximating a circle from an edge pattern at a lower end of a straight-trunk portion of a real image of the seed crystal, and a mirror-image edge approximation circle is generated by approximating the circle from an edge pattern at the straight-trunk portion of a mirror image of the seed crystal reflected on the melt surface.---

公开(公告)号：US20230332323A1

公开(公告)日：2023-10-19

申请号：US17784742

申请日：2020-12-03

Applicant: SILTRONIC AG

Inventor： Wolfgang STAUDACHER ,  Georg RAMING

IPC: C30B15/04 ,  C30B15/26 ,  C30B15/10 ,  C30B29/06

CPC classification number: C30B15/04 ,  C30B15/26 ,  C30B15/10 ,  C30B29/06

Abstract: Single crystal silicon cylindrical portions grown by the CZ method and highly doped with one or more n-type dopants so as to have a resistivity of not more than 2 mΩcm are prepared by directing dopant in a gas flow from an external sublimation apparatus into the pulling chamber through or below the heat shield, to the bottom of an annular ring of the heat shield and from there through a plurality of nozzles toward the surface of the melt.

公开(公告)号：US20160168748A1

公开(公告)日：2016-06-16

申请号：US14566085

申请日：2014-12-10

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Frank Sinclair ,  Peter L. Kellerman

IPC: C30B15/26 ,  C30B15/06 ,  C30B29/06 ,  C30B15/34

CPC classification number: C30B15/26 ,  C30B15/06 ,  C30B29/06 ,  G01N23/207

Abstract: An apparatus to monitor thickness of a crystalline sheet grown from a melt. The apparatus may include a process chamber configured to house the melt and crystalline sheet; an x-ray source disposed on a first side of the crystalline sheet and configured to deliver a first beam of x-rays that penetrate the crystalline sheet from a first surface to a second surface opposite the first surface, at a first angle of incidence with respect to the first surface; and an x-ray detector disposed on the first side of the crystalline sheet and configured to intercept a second beam of x-rays that are generated by reflection of the first beam of x-rays from the crystalline sheet at an angle of reflection with respect to the first surface, wherein a sum of the angle of incidence and the angle of reflection satisfies the equation λ=2d sin θ.

Abstract translation: 监测从熔体生长的结晶片的厚度的装置。 设备可以包括处理室，其被配置为容纳熔体和结晶片; x射线源，其设置在所述结晶片的第一侧上，并且被配置为以与所述第一表面相对的第一表面向所述第一表面穿过所述结晶片的第一射线束以与所述第一表面相反的第二表面， 尊重第一面; 以及x射线检测器，其设置在所述结晶片的第一侧上并且被配置为截取通过以与所述晶片的相反的角度反射所述第一X射线束而产生的第二X射线束 到第一表面，其中入射角和反射角的和满足等式λ=2dsinθ。

公开(公告)号：US09284660B2

公开(公告)日：2016-03-15

申请号：US13314503

申请日：2011-12-08

Applicant: Keiichi Takanashi ,  Ken Hamada

Inventor： Keiichi Takanashi ,  Ken Hamada

IPC: C30B29/06 ,  C30B15/26

CPC classification number: C30B15/26 ,  C30B29/06 ,  Y10T117/1008

Abstract: An apparatus of producing a silicon single crystal including: an imaging device; a heat shield that has a circular opening; a first operation unit that operates the imaging device and takes a real image of the heat shield and a mirror image of the heat shield reflected on a surface of the silicon melt, measures a spacing between the real image and the mirror image, and calculates a position of a melt-surface; a second operating unit that operates the imaging device and takes an image of a bright-zone in the vicinity of the solid-liquid interface, and calculates a position of the melt-surface based on the image of the bright zone; and a controlling unit that refers a data of the position of the silicon melt obtained by the first operation unit and the second operation unit, and controls the position of the silicon melt.

Abstract translation: 一种制造单晶硅的装置，包括：成像装置; 具有圆形开口的隔热罩; 第一操作单元，操作成像装置并获取热屏蔽的真实图像和在硅熔体的表面上反射的热屏蔽的镜像，测量实像和镜像之间的间隔，并计算出 熔体表面的位置; 第二操作单元，其操作所述成像装置并拍摄所述固液界面附近的亮区图像，并且基于所述亮区的图像来计算所述熔体表面的位置; 以及控制单元，其参考由第一操作单元和第二操作单元获得的硅熔体的位置的数据，并控制硅熔体的位置。

公开(公告)号：US08871023B2

公开(公告)日：2014-10-28

申请号：US13083768

申请日：2011-04-11

Applicant: Keiichi Takanashi ,  Kengo Hayashi ,  Yasuhito Narushima

Inventor： Keiichi Takanashi ,  Kengo Hayashi ,  Yasuhito Narushima

IPC: C30B15/26 ,  C30B29/06 ,  C30B15/20 ,  C30B35/00

CPC classification number: C30B29/06 ,  C30B15/20 ,  C30B15/26 ,  C30B35/00 ,  Y10T117/1068

Abstract: A silicon single crystal pull-up apparatus is provided with a chamber into which an inert gas is introduced; a crucible that supports a silicon melt within the chamber; a heater that heats the silicon melt in the crucible; a lifting device for lifting and lowering the crucible; a thermal radiation shield disposed above the crucible; a cylindrical purging tube that is provided inside the thermal radiation shield so as to straighten the inert gas; a CCD camera that photographs the mirror image of the thermal radiation shield reflected on the liquid surface of the silicon melt through the purging tube; a liquid surface level calculator that calculates the liquid surface level of the silicon melt from the position of the mirror image photographed by the camera; and a conversion table creator that creates a conversion table representing a relationship between the liquid surface level of the silicon melt and the mirror image position obtained. The liquid surface level calculator calculates the liquid surface level based on the conversion table.

Abstract translation: 硅单晶上拉装置设置有引入惰性气体的室; 在所述室内支撑硅熔体的坩埚; 加热器，其加热坩埚中的硅熔体; 用于提升和降低坩埚的提升装置; 设置在坩埚上方的热辐射屏蔽; 圆柱形清洗管，设置在热辐射屏蔽内部以使惰性气体变直; CCD摄像机，其通过清洗管照射在硅熔体的液面上反射的热辐射屏蔽的镜像; 液面计算器，用于从由照相机拍摄的镜像位置计算出硅熔体的液面; 以及转换表创建器，其创建表示硅熔体的液面与所获得的镜像位置之间的关系的转换表。 液面计算器根据转换表计算液面水平。