公开(公告)号：US20230383433A1

公开(公告)日：2023-11-30

申请号：US18246700

申请日：2021-09-03

Applicant: HANWHA SOLUTIONS CORPORATION ,  Hanwha Corporation

Inventor： Han Woong JEON ,  Kyung Seok LEE ,  Young Jun LEE

IPC: C30B15/14 ,  C30B29/06 ,  C30B15/10

CPC classification number: C30B15/14 ,  C30B29/06 ,  C30B15/10

Abstract: An ingot growing apparatus is disclosed. An ingot growing apparatus comprising a heater according to an aspect of the present invention may comprise: a crucible for accommodating molten silicon; a growth furnace having an inner space in which the crucible is installed; a susceptor having an inner surface shaped to correspond to an outer surface of the crucible and surrounding the outer surface of the crucible; and a heater for heating the susceptor, wherein the heater may comprise: a coil which is fixed at a position spaced a predetermined distance apart from an outer surface of the susceptor, is formed to be wound along the outer surface of the susceptor to generate a magnetic field, and heats the susceptor by electromagnetic induction due to the magnetic field; and a shield which is formed to surround an outer surface of the coil to support the coil and blocks the coil from being exposed to the inner space of the growth furnace.

公开(公告)号：US20230366122A1

公开(公告)日：2023-11-16

申请号：US18246520

申请日：2021-09-03

Applicant: HANWHA SOLUTIONS CORPORATION ,  HANWHA CORPORATION

Inventor： Jin Sung PARK ,  Kyung Seouk LEE ,  Young Jun LEE ,  Keun Ho Kim ,  Han Woong JEON

IPC: C30B15/12 ,  C30B29/06 ,  C30B15/00

CPC classification number: C30B15/12 ,  C30B29/06 ,  C30B15/002

Abstract: The present invention relates to a continuous ingot growing apparatus, and more specifically, to a continuous ingot growing apparatus which melts a solid silicon material supplied to a preliminary crucible to supply the solid silicon material to a main crucible and which can adjust a supply amount of molten silicon while blocking floating matter floating on top of the molten silicon so as not to be supplied.

公开(公告)号：US20230374697A1

公开(公告)日：2023-11-23

申请号：US18248072

申请日：2021-09-16

Applicant: HANWHA SOLUTIONS CORPORATION ,  HANWHA CORPORATION

Inventor： Young Jun LEE ,  Jin Sung PARK ,  Han Woong JEON

IPC: C30B15/26 ,  C30B29/06 ,  C30B15/10

CPC classification number: C30B15/26 ,  C30B29/06 ,  C30B15/10

Abstract: An energy-saving ingot growing device is disclosed. The ingot growing device according to the present invention comprises: a chamber having provided therein a crucible heated by a heat source in order to melt silicon; a side surface insulating material provided inside the chamber so as to insulate the side surface of the crucible; and an observation part provided to penetrate the chamber and the side surface insulating material so that the inside of the crucible can be observed.

公开(公告)号：US20240240353A1

公开(公告)日：2024-07-18

申请号：US18030814

申请日：2021-09-16

Applicant: HANWHA SOLUTIONS CORPORATION ,  HANWHA CORPORATION

Inventor： Young Min LEE ,  Kyung Seok LEE ,  Han Woong JEON

IPC: C30B15/20 ,  C30B29/06

CPC classification number: C30B15/20 ,  C30B29/06

Abstract: An intake/exhaust device of an apparatus for continuously growing a silicon ingot is disclosed. The intake/exhaust device of an apparatus for continuously growing a silicon ingot, according to the present invention, comprises: a chamber of which the inside is maintained in a vacuum atmosphere, and which includes a first section having a main crucible provided in the center thereof so that an ingot grows therein, and a second section having, on the outer side of the upper end thereof, a preliminary melting device for providing molten silicon to the main crucible; and a vacuum pump connected to the chamber to provide vacuum pressure so that the inside thereof is maintained in a vacuum atmosphere, wherein the first section of the chamber has a first injection port in through which inert gas for removing oxides and impurities inside the chamber flows, and a first exhaust port through which the gas is discharged, and the second section of the chamber also has a second injection port in through which the inert gas flows, and a second exhaust port through which the gas is discharged.

公开(公告)号：US20230374696A1

公开(公告)日：2023-11-23

申请号：US18028251

申请日：2021-09-03

Applicant: HANWHA SOLUTIONS CORPORATION ,  HANWHA CORPORATION

Inventor： Han Woong JEON ,  Jin Sung PARK ,  Young Jun LEE ,  Young Min LEE

IPC: C30B15/02 ,  C30B29/06 ,  C30B15/00 ,  C30B15/10 ,  C30B15/20

CPC classification number: C30B15/02 ,  C30B29/06 ,  C30B15/002 ,  C30B15/10 ,  C30B15/20

Abstract: The present invention relates to a premelter for pre-melting silicon before supplying to a main crucible capable of accurately measuring an input amount of molten silicon input into an ingot growth crucible, thereby effectively controlling the input amount, and a method for controlling the same. According to an embodiment of the present invention, disclosed is a premelter for pre-melting silicon before supplying to a main crucible, comprising: a preliminary crucible for supplying silicon in a molten state to a main crucible in which an ingot is grown after heating the silicon material in a solid state to become silicon in a molten state; a preliminary crucible moving module configured to tilt the preliminary crucible to one of a first position in which the preliminary crucible contains the solid silicon material or the molten silicon or a second position where the molten silicon in the preliminary crucible flows into the main crucible; and a control unit for controlling the preliminary crucible moving module.

公开(公告)号：US20240200224A1

公开(公告)日：2024-06-20

申请号：US18555514

申请日：2022-08-31

Applicant: HANWHA SOLUTIONS CORPORATION

Inventor： Jin Sung PARK ,  Han Woong JEON ,  Kyung Seok LEE ,  Keun Ho KIM ,  Young Min LEE

IPC: C30B15/04 ,  C30B15/00 ,  C30B29/06

CPC classification number: C30B15/04 ,  C30B15/002 ,  C30B29/06

Abstract: An ingot growing apparatus, according to an embodiment of the present invention, comprises: a growth furnace in which a main crucible accommodating molten silicon for growing an ingot is disposed; a preliminary melting part which receives and melts a solid silicon material and a dopant, and has a preliminary crucible that supplies the molten silicon to the main crucible; a transfer part which transfers the solid silicon material and the dopant to the preliminary crucible; a silicon supply part which supplies the solid silicon material to the transfer part; and a dopant supply part which is disposed on an upper side of the transfer part and supplies the dopant to the transfer part according to a concentration of the dopant melted in the main crucible.

公开(公告)号：US20240167190A1

公开(公告)日：2024-05-23

申请号：US18551066

申请日：2022-06-23

Applicant: HANWHA SOLUTIONS CORPORATION

Inventor： Keun Ho KIM ,  Jin Sung PARK ,  Young Min LEE ,  Han Woong JEON

IPC: C30B15/12 ,  C30B15/02 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06

CPC classification number: C30B15/12 ,  C30B15/02 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06

Abstract: An ingot growth apparatus according to an embodiment of the present invention comprises: a growth furnace having a main crucible which is disposed within the growth furnace and holds molten silicon therein in order to grow an ingot; a preliminary melting part having a preliminary crucible which is supplied with a solid silicon material, melts the solid silicon material, and supplies the molten silicon to the main crucible; a temperature detection sensor which is disposed above the preliminary melting part and detects the temperature of the solid silicon material or molten silicon held in the preliminary melting part; and a control part which controls supply of the molten silicon from the preliminary crucible to the main crucible on the basis of the temperature detected by the temperature detection sensor.

公开(公告)号：US20240125002A1

公开(公告)日：2024-04-18

申请号：US18546046

申请日：2022-06-17

Applicant: HANWHA SOLUTIONS CORPORATION

Inventor： Jin Sung PARK ,  Keun Ho KIM ,  Young Min LEE ,  Han Woong JEON

IPC: C30B15/02 ,  C30B15/20 ,  C30B29/06

CPC classification number: C30B15/02 ,  C30B15/20 ,  C30B29/06

Abstract: Disclosed is a method for controlling the supply of solid silicon to a preliminary crucible of an ingot growth apparatus for maintaining a constant amount of molten silicon in the preliminary crucible by measuring the height of the molten silicon in the preliminary crucible. The method for controlling the supply of solid silicon to a preliminary crucible of an ingot growth apparatus, according to the present invention, is a method for controlling the supply of solid silicon to the preliminary crucible for supplying molten silicon to a main crucible of the ingot growth apparatus, the method comprising: a management range setting step of setting an appropriate management range of the molten silicon in the preliminary crucible; a height measuring step of measuring the height of the molten silicon contained in the preliminary crucible to confirm whether the molten silicon falls within an appropriate management range of the molten silicon; a supply amount determining step of determining a supply amount of solid silicon to be supplied to the preliminary crucible according to the height measured in the height measuring step; and a step of supplying a predetermined supply amount of solid silicon determined according to the supply amount determining step to the preliminary crucible.

公开(公告)号：US20240061239A1

公开(公告)日：2024-02-22

申请号：US18260063

申请日：2022-07-06

Applicant: HANWHA SOLUTIONS CORPORATION

Inventor： Han Woong JEON ,  Jin Sung PARK ,  Keun Ho KIM ,  Young Min LEE

IPC: G02B27/00 ,  G02B23/24

CPC classification number: G02B27/0006 ,  G02B23/2492

Abstract: Disclosed is a high-temperature endoscope of an ingot growth apparatus in which impurity deposition is prevented by having a structure that increases a flow rate of an inert gas for preventing impurities from being deposited. A high-temperature endoscope preventing impurities of an ingot growth apparatus from being deposited, according to one embodiment of the present invention, may comprise: a frame extending to the inside of a chamber of the ingot growth apparatus and having a gas discharge port provided at an end portion thereof through which an inert gas is discharged; a lens installed at the center of the end portion of the frame and protected by the inert gas discharged from the gas discharge port; and a guide tube installed on an outer surface of the frame and having a guide portion extending from the end portion of the frame so as to guide the inert gas to prevent impurities from being deposited on the lens by increasing a flow rate of the inert gas.