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1.发明公开公开(公告)号：US20240061239A1
公开(公告)日：2024-02-22
申请号：US18260063
申请日：2022-07-06
发明人： Han Woong JEON , Jin Sung PARK , Keun Ho KIM , Young Min LEE
CPC分类号： G02B27/0006 , G02B23/2492
摘要： Disclosed is a high-temperature endoscope of an ingot growth apparatus in which impurity deposition is prevented by having a structure that increases a flow rate of an inert gas for preventing impurities from being deposited. A high-temperature endoscope preventing impurities of an ingot growth apparatus from being deposited, according to one embodiment of the present invention, may comprise: a frame extending to the inside of a chamber of the ingot growth apparatus and having a gas discharge port provided at an end portion thereof through which an inert gas is discharged; a lens installed at the center of the end portion of the frame and protected by the inert gas discharged from the gas discharge port; and a guide tube installed on an outer surface of the frame and having a guide portion extending from the end portion of the frame so as to guide the inert gas to prevent impurities from being deposited on the lens by increasing a flow rate of the inert gas.
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公开(公告)号：US20240200224A1
公开(公告)日：2024-06-20
申请号：US18555514
申请日：2022-08-31
发明人： Jin Sung PARK , Han Woong JEON , Kyung Seok LEE , Keun Ho KIM , Young Min LEE
CPC分类号： C30B15/04 , C30B15/002 , C30B29/06
摘要： An ingot growing apparatus, according to an embodiment of the present invention, comprises: a growth furnace in which a main crucible accommodating molten silicon for growing an ingot is disposed; a preliminary melting part which receives and melts a solid silicon material and a dopant, and has a preliminary crucible that supplies the molten silicon to the main crucible; a transfer part which transfers the solid silicon material and the dopant to the preliminary crucible; a silicon supply part which supplies the solid silicon material to the transfer part; and a dopant supply part which is disposed on an upper side of the transfer part and supplies the dopant to the transfer part according to a concentration of the dopant melted in the main crucible.
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3.发明公开公开(公告)号：US20240167190A1
公开(公告)日：2024-05-23
申请号：US18551066
申请日：2022-06-23
发明人： Keun Ho KIM , Jin Sung PARK , Young Min LEE , Han Woong JEON
摘要： An ingot growth apparatus according to an embodiment of the present invention comprises: a growth furnace having a main crucible which is disposed within the growth furnace and holds molten silicon therein in order to grow an ingot; a preliminary melting part having a preliminary crucible which is supplied with a solid silicon material, melts the solid silicon material, and supplies the molten silicon to the main crucible; a temperature detection sensor which is disposed above the preliminary melting part and detects the temperature of the solid silicon material or molten silicon held in the preliminary melting part; and a control part which controls supply of the molten silicon from the preliminary crucible to the main crucible on the basis of the temperature detected by the temperature detection sensor.
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公开(公告)号：US20240003045A1
公开(公告)日：2024-01-04
申请号：US18028605
申请日：2021-09-03
发明人： Keun Ho KIM , Kyung Seok LEE , Jin Sung PARK
摘要： An ingot growing apparatus is disclosed. An ingot growing apparatus according to an aspect of the present invention comprises a growth furnace for growing an ingot, and a main crucible which is accommodated in the growth furnace and accommodates molten silicon, wherein the main crucible comprises: a main crucible bottom portion; a main crucible side portion that extends upwardly from the main crucible bottom portion; and a main crucible inclined portion that has an inclined surface extending upward and outward from the main crucible side portion. In addition, when the molten silicon is supplied from the upper side of the main crucible side portion into the main crucible, the molten silicon is guided into the main crucible along the inclined surface, thereby preventing the molten silicon from splashing around the main crucible.
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5.发明公开公开(公告)号：US20240125002A1
公开(公告)日：2024-04-18
申请号：US18546046
申请日：2022-06-17
发明人： Jin Sung PARK , Keun Ho KIM , Young Min LEE , Han Woong JEON
摘要： Disclosed is a method for controlling the supply of solid silicon to a preliminary crucible of an ingot growth apparatus for maintaining a constant amount of molten silicon in the preliminary crucible by measuring the height of the molten silicon in the preliminary crucible. The method for controlling the supply of solid silicon to a preliminary crucible of an ingot growth apparatus, according to the present invention, is a method for controlling the supply of solid silicon to the preliminary crucible for supplying molten silicon to a main crucible of the ingot growth apparatus, the method comprising: a management range setting step of setting an appropriate management range of the molten silicon in the preliminary crucible; a height measuring step of measuring the height of the molten silicon contained in the preliminary crucible to confirm whether the molten silicon falls within an appropriate management range of the molten silicon; a supply amount determining step of determining a supply amount of solid silicon to be supplied to the preliminary crucible according to the height measured in the height measuring step; and a step of supplying a predetermined supply amount of solid silicon determined according to the supply amount determining step to the preliminary crucible.
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公开(公告)号：US20230366124A1
公开(公告)日：2023-11-16
申请号：US18246524
申请日：2021-09-03
发明人： Keun Ho KIM , Kyung Seok LEE , Jin Sung PARK , Young Jun LEE
摘要： Disclosed is an ingot growing apparatus. An ingot growing apparatus according to an embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon and is rotated clockwise or counterclockwise to rotate the molten silicon clockwise or counterclockwise in order to grow an ingot, a susceptor formed to surround an outer surface of the main crucible and rotated in the same direction as the main crucible, and a preliminary melting unit which receives a solid silicon material, melts the solid silicon material into molten silicon, and supplies the molten silicon to the main crucible, wherein the preliminary melting unit includes a preliminary crucible which accommodates the molten silicon, and the preliminary crucible supplies the molten silicon contained in the preliminary crucible to the main crucible in a direction in which the molten silicon contained in the main crucible rotates.
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公开(公告)号：US20230332326A1
公开(公告)日：2023-10-19
申请号：US18028815
申请日：2021-09-03
发明人： Jin Sung PARK , Kyung Seok LEE , Young Jun LEE , Keun Ho KIM
CPC分类号： C30B15/20 , C30B29/06 , C30B15/002 , C30B15/28
摘要： Disclosed is an ingot growing apparatus. The ingot growing apparatus according to the embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon to grow an ingot, a preliminary crucible which receives a solid silicon material, melts the solid silicon material, and supplies molten silicon to the main crucible, a measurement unit which is installed to pass through the growth furnace and measures a change in level of the surface of the molten silicon in the main crucible, and a control unit which controls supply of the molten silicon in the preliminary crucible to the main crucible on the basis of the measured change in the level of the surface of the molten silicon.
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