An ingot growing apparatus is disclosed. An ingot growing apparatus according to an aspect of the present invention comprises a growth furnace for growing an ingot, and a main crucible which is accommodated in the growth furnace and accommodates molten silicon, wherein the main crucible comprises: a main crucible bottom portion; a main crucible side portion that extends upwardly from the main crucible bottom portion; and a main crucible inclined portion that has an inclined surface extending upward and outward from the main crucible side portion. In addition, when the molten silicon is supplied from the upper side of the main crucible side portion into the main crucible, the molten silicon is guided into the main crucible along the inclined surface, thereby preventing the molten silicon from splashing around the main crucible.