An ingot growth apparatus according to an embodiment of the present invention comprises: a growth furnace having a main crucible which is disposed within the growth furnace and holds molten silicon therein in order to grow an ingot; a preliminary melting part having a preliminary crucible which is supplied with a solid silicon material, melts the solid silicon material, and supplies the molten silicon to the main crucible; a temperature detection sensor which is disposed above the preliminary melting part and detects the temperature of the solid silicon material or molten silicon held in the preliminary melting part; and a control part which controls supply of the molten silicon from the preliminary crucible to the main crucible on the basis of the temperature detected by the temperature detection sensor.