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公开(公告)号：US11885036B2
公开(公告)日：2024-01-30
申请号：US17634176
申请日：2020-08-09
发明人： Jesse S. Appel , Alison Greenlee , Nathan Stoddard , Peter Kellerman , Parthiv Daggolu , Alexander Martinez , Saeed Pirooz , Brandon Williard , Charles Bowen , Brian McMullen , David Morrell , Dawei Sun
摘要： A ribbon is formed such that the ribbon floats on a melt using a cold initializer facing an exposed surface of the melt. The ribbon is single crystal silicon. The ribbon is pulled from the silicon melt at a low angle off the melt surface. The ribbon is formed at a same rate as the pulling. The ribbon is separated from the melt at a wall of the crucible where a stable meniscus forms. The ribbon has a thickness between a first surface and an opposite second surface from 50 μm to 5 mm. The ribbon includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to a bulk of the ribbon.
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公开(公告)号：US20220316087A1
公开(公告)日：2022-10-06
申请号：US17634176
申请日：2020-08-09
发明人： Alison Greenlee , Nathan Stoddard , Jesse S. Appel , Peter Kellerman , Parthiv Daggolu , Alexander Martinez , Saeed Pirooz , Brandon Williard , Charles Bowen , Brian McMullen , David Morrell , Dawei SUN
摘要： A ribbon is formed such that the ribbon floats on a melt using a cold initializer facing an exposed surface of the melt. The ribbon is single crystal silicon. The ribbon is pulled from the silicon melt at a low angle off the melt surface. The ribbon is formed at a same rate as the pulling. The ribbon is separated from the melt at a wall of the crucible where a stable meniscus forms. The ribbon has a thickness between a first surface and an opposite second surface from 50 μm to 5 mm. The ribbon includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to a bulk of the ribbon.
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