-
公开(公告)号：US11885036B2
公开(公告)日：2024-01-30
申请号：US17634176
申请日：2020-08-09
发明人： Jesse S. Appel , Alison Greenlee , Nathan Stoddard , Peter Kellerman , Parthiv Daggolu , Alexander Martinez , Saeed Pirooz , Brandon Williard , Charles Bowen , Brian McMullen , David Morrell , Dawei Sun
摘要： A ribbon is formed such that the ribbon floats on a melt using a cold initializer facing an exposed surface of the melt. The ribbon is single crystal silicon. The ribbon is pulled from the silicon melt at a low angle off the melt surface. The ribbon is formed at a same rate as the pulling. The ribbon is separated from the melt at a wall of the crucible where a stable meniscus forms. The ribbon has a thickness between a first surface and an opposite second surface from 50 μm to 5 mm. The ribbon includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to a bulk of the ribbon.
-
公开(公告)号：US20230099939A1
公开(公告)日：2023-03-30
申请号：US17801181
申请日：2021-02-19
摘要： An apparatus for controlling a thickness of a crystalline ribbon grown on a surface of a melt includes a crucible configured to hold a melt; a cold initializer facing an exposed surface of the melt; a segmented cooled thinning controller disposed above the crucible on a side of the crucible with the cold initializer; and a uniform melt-back heater disposed below of the crucible opposite the cooled thinning controller. Heat is applied to the ribbon through the melt using a uniform melt-back heater disposed below the melt. Cooling is applied to the ribbon using a segmented cooled thinning controller facing the crystalline ribbon above the melt.
-
公开(公告)号：US20230096046A1
公开(公告)日：2023-03-30
申请号：US17801198
申请日：2021-02-19
摘要： An optical sensor is configured to detect a difference in emissivity between the melt and a solid ribbon on the melt, which may be silicon. The optical sensor is positioned on a same side of a crucible as a cold initializer. A difference in emissivity between the melt and the ribbon on the melt is detected using an optical sensor. This difference in emissivity can be used to determine and control a width of the ribbon.
-
公开(公告)号：US20220325438A1
公开(公告)日：2022-10-13
申请号：US17634044
申请日：2020-08-09
发明人： Jesse S. Appel , Alison Greenlee , Nathan Stoddard , Peter Kellerman , Parthiv Daggolu , Alexander Martinez , Saeed Pirooz
IPC分类号： C30B29/06
摘要： A single crystal silicon wafer has a thickness between a first surface and an opposite second surface from 50 μm to 300 μm. The wafer includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to an adjacent region of the wafer. The wafer has a bulk minority carrier lifetime greater than 100 μs.
-
公开(公告)号：US20220316087A1
公开(公告)日：2022-10-06
申请号：US17634176
申请日：2020-08-09
发明人： Alison Greenlee , Nathan Stoddard , Jesse S. Appel , Peter Kellerman , Parthiv Daggolu , Alexander Martinez , Saeed Pirooz , Brandon Williard , Charles Bowen , Brian McMullen , David Morrell , Dawei SUN
摘要： A ribbon is formed such that the ribbon floats on a melt using a cold initializer facing an exposed surface of the melt. The ribbon is single crystal silicon. The ribbon is pulled from the silicon melt at a low angle off the melt surface. The ribbon is formed at a same rate as the pulling. The ribbon is separated from the melt at a wall of the crucible where a stable meniscus forms. The ribbon has a thickness between a first surface and an opposite second surface from 50 μm to 5 mm. The ribbon includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to a bulk of the ribbon.
-
-
-
-
搜索结果
5 条记录 (耗时 0.013 秒)
