公开(公告)号：US20240363354A1

公开(公告)日：2024-10-31

申请号：US18636449

申请日：2024-04-16

申请人： Applied Materials, Inc.

发明人： He REN ,  Raman GAIRE ,  Shi YOU ,  Pranav RAMESH ,  Houssam LAZKANI ,  Shawn THOMAS ,  Abhishek DUBE ,  Mehul B. NAIK ,  Songkram Sonny SRIVATHANAKUL

IPC分类号： H01L21/285 ,  C30B25/18 ,  C30B29/06 ,  C30B29/68 ,  H01L21/768 ,  H01L29/40

CPC分类号： H01L21/28518 ,  C30B25/18 ,  C30B29/06 ,  C30B29/68 ,  H01L21/768 ,  H01L29/401

摘要： Semiconductor devices and methods for manufacturing the same are provided. The method includes epitaxially growing a doped crystalline silicon-containing layer over a source/drain feature and growing a doped amorphous silicon-containing layer over a field region of a semiconductor layer. The trench is formed in the semiconductor layer and the trench exposes the source/drain feature. The method further includes epitaxially growing an undoped crystalline silicon-containing capping layer over the doped crystalline silicon-containing layer and growing an undoped amorphous silicon-containing layer over the doped silicon-containing amorphous layer. The method further includes selectively removing the doped amorphous silicon-containing layer and the undoped amorphous silicon-containing layer relative to the silicon-containing crystalline capping layer. The method further includes removing the silicon-containing crystalline capping layer to expose the doped silicon-containing crystalline layer.