Wiring base and electronic device

    公开(公告)号:US12087649B2

    公开(公告)日:2024-09-10

    申请号:US17794761

    申请日:2021-01-06

    发明人: Shigenori Takaya

    IPC分类号: H01L23/14 H01L23/04

    CPC分类号: H01L23/14 H01L23/04

    摘要: A wiring base includes an insulation base having a first surface, a first differential-wiring channel, and a second differential-wiring channel. The first and the second differential-wiring channels are on the first surface and arranged side by side in a first direction. The first differential-wiring channel includes a pair of first signal conductors extending in a second direction intersecting the first direction and a pair of first grounding conductors extending along the first signal conductors with the first signal conductors being interposed therebetween. The second differential-wiring channel includes a pair of second signal conductors extending in the second direction and a pair of second grounding conductors extending along the second signal conductors with the second signal conductors being interposed therebetween. The wiring base further includes a first film extending in the second direction and positioned between first and second grounding conductors adjacent to each other in plan of the first surface.

    CHIP PACKAGE WITH LID
    7.
    发明公开

    公开(公告)号:US20240120294A1

    公开(公告)日:2024-04-11

    申请号:US18391891

    申请日:2023-12-21

    摘要: A chip package includes a substrate, a semiconductor chip, and a thermal conductive structure. The chip package includes a first and a second support structures below the thermal conductive structure. The first and the second support structures connect the substrate and corners of the thermal conductive structure. The thermal conductive structure has a side edge connecting the first and the second support structures. The first and the second support structures and the side edge together define of an opening exposing a space surrounding the semiconductor chip. The first and the second support structures are disposed along a side of the substrate. The first support structure is laterally separated from the side of the substrate by a first lateral distance. The side edge of the thermal conductive structure is laterally separated from the side of the substrate by a second lateral distance different than the first lateral distance.