公开(公告)号：US12119291B2

公开(公告)日：2024-10-15

申请号：US17121093

申请日：2020-12-14

申请人： Intel Corporation

发明人： Aleksandar Aleksov ,  Mohammad Enamul Kabir ,  Adel A. Elsherbini ,  Shawna M. Liff ,  Johanna M. Swan ,  Feras Eid

IPC分类号： H01L23/00 ,  H01L23/498 ,  H01L23/538 ,  H01L23/31 ,  H01L23/48

CPC分类号： H01L23/49822 ,  H01L23/5383 ,  H01L24/08 ,  H01L24/32 ,  H01L23/3135 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49894 ,  H01L2224/08225 ,  H01L2224/32225

摘要： Disclosed herein are microelectronic assemblies including microelectronic components coupled by direct bonding, and related structures and techniques. In some embodiments, a microelectronic assembly may include a first microelectronic component including a first guard ring extending through at least a portion of a thickness of and along a perimeter; a second microelectronic component including a second guard ring extending through at least a portion of a thickness of and along a perimeter, where the first and second microelectronic components are coupled by direct bonding; and a seal ring formed by coupling the first guard ring to the second guard ring. In some embodiments, a microelectronic assembly may include a microelectronic component coupled to an interposer that includes a first liner material at a first surface; a second liner material at an opposing second surface; and a perimeter wall through the interposer and connected to the first and second liner materials.

公开(公告)号：US12040307B2

公开(公告)日：2024-07-16

申请号：US16887126

申请日：2020-05-29

申请人： Intel Corporation

发明人： Feras Eid ,  Adel Elsherbini ,  Georgios Dogiamis

IPC分类号： H01L23/00

CPC分类号： H01L24/81 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/16227 ,  H01L2224/81222 ,  H01L2224/81815

摘要： Magnetic structures incorporated into integrated circuit assemblies. In some examples, the magnetic structures may enable local heating and reflow of solder interconnects for the attachment of integrated circuit devices to electronic substrates.

公开(公告)号：US20240203926A1

公开(公告)日：2024-06-20

申请号：US18593775

申请日：2024-03-01

申请人： Intel Corporation

发明人： Feras Eid ,  Joe Walczyk ,  Weihua Tang ,  Akhilesh Rallabandi ,  Marco Aurelio Cartas Ayala

IPC分类号： H01L23/00

CPC分类号： H01L24/29 ,  H01L2224/29287 ,  H01L2224/29293 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2924/14 ,  H01L2924/351

摘要： An integrated circuit (IC) die structure comprises a substrate material comprising silicon. Integrated circuitry is over a first side of the substrate material. A composite layer is in direct contact with a second side of the substrate material. The second side is opposite the first side. The composite layer comprises a first constituent material associated with a first linear coefficient of thermal expansion (CTE), and a first thermal conductivity exceeding that of the substrate. The composite layer also comprises a second constituent material associated with a second CTE that is lower than the first, and a second thermal conductivity exceeding that of the substrate.

公开(公告)号：US20240063091A1

公开(公告)日：2024-02-22

申请号：US17891735

申请日：2022-08-19

申请人： Intel Corporation

发明人： Adel Elsherbini ,  Feras Eid ,  Scot Kellar ,  Yoshihiro Tomita ,  Rajiv Mongia ,  Kimin Jun ,  Shawna Liff ,  Wenhao Li ,  Johanna Swan ,  Bhaskar Jyoti Krishnatreya ,  Debendra Mallik ,  Krishna Vasanth Valavala ,  Lei Jiang ,  Xavier Brun ,  Mohammad Enamul Kabir ,  Haris Khan Niazi ,  Jiraporn Seangatith ,  Thomas Sounart

IPC分类号： H01L23/473 ,  H01L23/00 ,  H01L25/065 ,  H01L23/367 ,  H01L23/373

CPC分类号： H01L23/473 ,  H01L24/08 ,  H01L25/0652 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L23/3677 ,  H01L23/3675 ,  H01L23/3732 ,  H01L23/3738 ,  H01L2924/3511 ,  H01L2224/08145 ,  H01L2224/08121 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/182 ,  H01L2924/186

摘要： Microelectronic devices, assemblies, and systems include a multichip composite device having one or more chiplets bonded to a base die and an inorganic dielectric material adjacent the chiplets and over the base die. The multichip composite device is coupled to a structural member that is made of or includes a heat conducting material, or has integrated fluidic cooling channels to conduct heat from the chiplets and the base die.

公开(公告)号：US20240030098A1

公开(公告)日：2024-01-25

申请号：US18366734

申请日：2023-08-08

申请人： Intel Corporation

发明人： Feras Eid ,  Telesphor Kamgaing ,  Georgios Dogiamis ,  Aleksandar Aleksov ,  Johanna M. Swan

IPC分类号： H01L23/427 ,  H01L23/38 ,  H01L23/373 ,  H01L23/31 ,  H01L23/48 ,  H03H9/46 ,  H01L23/66

CPC分类号： H01L23/427 ,  H01L23/38 ,  H01L23/373 ,  H01L23/3157 ,  H01L23/481 ,  H03H9/46 ,  H01L23/66 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/6677

摘要： Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.

公开(公告)号：US20230317556A1

公开(公告)日：2023-10-05

申请号：US17710658

申请日：2022-03-31

申请人： Intel Corporation

发明人： Akhilesh Rallabandi ,  Feras Eid

IPC分类号： H01L23/467

CPC分类号： H01L23/467

摘要： A modification structure may be formed within a chassis of an electronic product to improve its thermal dissipation systems, to lessen its weight, and/or to enhance its durability, while maintaining the industrial design/esthetics/ergonomics thereof, wherein the modification structure may comprise a plurality of fused modification material particles. The modification structures may have a higher thermal conductivity than the chassis, may have a lower thermal conductivity than the chassis, may have a lower density than the chassis, and/or may have a higher yield strength than the chassis. In a specific example, the modification structure may extend entirely through the chassis and be sufficiently porous to allow air flow to assist in heat dissipation from the electronic product.

公开(公告)号：US20230317546A1

公开(公告)日：2023-10-05

申请号：US17710670

申请日：2022-03-31

申请人： Intel Corporation

发明人： Xavier Brun ,  Nabankur Deb ,  Feras Eid

IPC分类号： H01L23/367 ,  H01L21/78

CPC分类号： H01L23/367 ,  H01L21/78 ,  H01L23/3135

摘要： Embodiments are directed to a device having an overhang portion. In some embodiments, a main body structure of the device comprises an IC die and an exterior surface of the main body structure comprises the overhang portion. The overhang portion adjoins a sidewall structure of the main body structure of the device, which is substantially perpendicular to a backside of the IC die. In some embodiments, the main body structure further comprises a package mold structure, which comprises the overhang portion.

公开(公告)号：US20230282542A1

公开(公告)日：2023-09-07

申请号：US17685060

申请日：2022-03-02

申请人： Intel Corporation

发明人： Wenhao Li ,  Feras Eid ,  Yoshihiro Tomita

IPC分类号： H01L23/373

CPC分类号： H01L23/3733 ,  H01L23/3732

摘要： An integrated circuit assembly may be fabricated to include an integrated circuit device having a backside surface and a metal matrix composite layer on the backside surface, wherein the metal matrix composite layer has a filler material disposed therein to reduce the coefficient of thermal expansion thereof. The filler material may be a plurality of graphitic carbon filler particles, wherein the plurality of graphitic carbon filler particles has an average aspect ratio of greater than about 10, or the filler material may be a plurality of diamond particles, wherein the filler material is clad with a metal material.

公开(公告)号：US20230271445A1

公开(公告)日：2023-08-31

申请号：US17680839

申请日：2022-02-25

申请人： Intel Corporation

发明人： Feras Eid ,  Wenhao Li ,  Jiraporn Seangatith ,  Paul Diglio ,  Xavier Brun

IPC分类号： B41N1/24

CPC分类号： B41N1/248

摘要： Reusable composite stencils for spray processes, particularly for spray processes used in the fabrication of integrated circuit devices, may be fabricated having a permanent core and at least one sacrificial material layer. Thus, in operation, when a predetermined amount of the sacrificial material layer has been ablated away by a material being sprayed in the spray process, the remaining sacrificial material layer may be removed and reapplied to its original thickness. Therefore, the permanent core, which is usually expensive and/or difficult to fabricate, may be repeatedly reused.

公开(公告)号：US20230266070A1

公开(公告)日：2023-08-24

申请号：US17677829

申请日：2022-02-22

申请人： Intel Corporation

发明人： Feras Eid ,  Akhilesh Rallabandi

IPC分类号： F28D15/04 ,  F28D15/02 ,  H05K7/20

CPC分类号： F28D15/046 ,  F28D15/043 ,  F28D15/0275 ,  H05K7/20336

摘要： A heat dissipation device for an integrated circuit assembly may be fabricated to include at least one heat pipe that is at least partially embedded in a base plate that is formed with an additive manufacturing process, such as cold spraying. Embedding the at least one heat pipe in the base plate, rather than soldering the heat pipe to the base plate, eliminates the thermal bottleneck presented by the soldering material and reduces the overall height or thickness of the integrated circuit assembly.