-
公开(公告)号：US20240079286A1
公开(公告)日：2024-03-07
申请号：US18507123
申请日：2023-11-13
发明人： Motoyoshi KUBOUCHI , Soichi YOSHIDA
IPC分类号： H01L23/34 , H01L21/22 , H01L27/06 , H01L29/06 , H01L29/10 , H01L29/32 , H01L29/40 , H01L29/739
CPC分类号： H01L23/34 , H01L21/221 , H01L27/0664 , H01L29/0623 , H01L29/1095 , H01L29/32 , H01L29/402 , H01L29/7397
摘要： In a semiconductor device, it is preferable to suppress a variation in characteristics of a temperature sensor. The semiconductor device is provided that includes a semiconductor substrate having a first conductivity type drift region, a transistor section provided in the semiconductor substrate, a diode section provided in the semiconductor substrate, a second conductivity type well region exposed at an upper surface of the semiconductor substrate, a temperature sensing unit that is adjacent to the diode section in top view and is provided above the well region, and an upper lifetime control region that is provided in the diode section, at the upper surface side of the semiconductor substrate, and in a region not overlapping with the temperature sensing unit in top view.
-
公开(公告)号：US20240021607A1
公开(公告)日：2024-01-18
申请号：US18476284
申请日：2023-09-27
IPC分类号： H01L27/07 , H01L27/06 , H01L29/08 , H01L29/739
CPC分类号： H01L27/0727 , H01L27/0664 , H01L29/0804 , H01L29/7391
摘要： Provided is a semiconductor device having transistor and diode sections. The semiconductor device comprises: a gate metal layer provided above the upper surface of a semiconductor substrate; an emitter electrode provided above the upper surface of the semiconductor substrate; a first conductivity-type emitter region provided on the semiconductor substrate upper surface side in the transistor section; a gate trench section, which is provided on the semiconductor substrate upper surface side in the transistor section, is electrically connected to the gate metal layer, and is in contact with the emitter region; an emitter trench section, which is provided on the semiconductor substrate upper surface side in the diode section, and is electrically connected to the emitter electrode; and a dummy trench section, which is provided on the semiconductor substrate upper surface side, is electrically connected to the gate metal layer, and is not in contact with the emitter region.
-
公开(公告)号：US20220139908A1
公开(公告)日：2022-05-05
申请号：US17577048
申请日：2022-01-17
IPC分类号： H01L27/07 , H01L27/06 , H01L29/08 , H01L29/739
摘要： Provided is a semiconductor device having transistor and diode sections. The semiconductor device comprises: a gate metal layer provided above the upper surface of a semiconductor substrate; an emitter electrode provided above the upper surface of the semiconductor substrate; a first conductivity-type emitter region provided on the semiconductor substrate upper surface side in the transistor section; a gate trench section, which is provided on the semiconductor substrate upper surface side in the transistor section, is electrically connected to the gate metal layer, and is in contact with the emitter region; an emitter trench section, which is provided on the semiconductor substrate upper surface side in the diode section, and is electrically connected to the emitter electrode; and a dummy trench section, which is provided on the semiconductor substrate upper surface side, is electrically connected to the gate metal layer, and is not in contact with the emitter region.
-
公开(公告)号：US20210234027A1
公开(公告)日：2021-07-29
申请号：US17210498
申请日：2021-03-24
发明人： Soichi YOSHIDA
IPC分类号： H01L29/739 , H01L29/861
摘要： Provided is a semiconductor device, comprising a semiconductor substrate; and an emitter electrode provided above an upper surface of the semiconductor substrate; wherein the semiconductor substrate has: a first conductive type drift region; a second conductive type base region provided between the drift region and the upper surface of the semiconductor substrate; a second conductive type contact region with a higher doping concentration than the base region, which is provided between the base region and the upper surface of the semiconductor substrate; a trench contact of a conductive material provided to connect to the emitter electrode and penetrate the contact region; and a second conductive type high-concentration plug region with a higher doping concentration than the contact region, which is provided in contact with a bottom portion of the trench contact.
-
公开(公告)号：US20190157264A1
公开(公告)日：2019-05-23
申请号：US16258480
申请日：2019-01-25
发明人： Soichi YOSHIDA , Hiroshi MIYATA
IPC分类号： H01L27/07 , H01L29/739 , H01L29/08 , H01L29/10 , H01L29/417 , H01L29/861
摘要： A semiconductor device including a semiconductor substrate is provided. The semiconductor substrate includes a transistor region, and the transistor region includes a drift region, a plurality of trench portions, a plurality of emitter regions and a plurality of contact regions, and an accumulation region provided between the drift region and the plurality of emitter regions in a depth direction, and having a higher first-conductivity-type doping concentration than the drift region. A first outermost contact region is an outermost one of the plurality of contact regions in a direction parallel to the first direction, and a length of the first outermost contact region in the first direction is longer than a length in the first direction of one contact region of the plurality of contact regions other than the first outermost contact region, and the accumulation region terminates at a position below the first outermost contact region.
-
公开(公告)号：US20230335599A1
公开(公告)日：2023-10-19
申请号：US18333562
申请日：2023-06-13
发明人： Yoshiharu KATO , Toru AJIKI , Tohru SHIRAKAWA , Misaki TAKAHASHI , Kaname MITSUZUKA , Takashi YOSHIMURA , Yuichi ONOZAWA , Hiroshi TAKISHITA , Soichi YOSHIDA
IPC分类号： H01L29/36 , H01L21/265 , H01L29/06 , H01L29/10
CPC分类号： H01L29/36 , H01L21/265 , H01L29/0615 , H01L29/1095
摘要： A device includes a substrate with upper/lower surfaces, including hydrogen containing region having hydrogen chemical concentration peaks in a depth direction. A carrier concentration distribution of the hydrogen containing region includes a first carrier concentration peak, a second carrier concentration peak closest to the first carrier concentration peak, a third carrier concentration peak arranged closer to the upper surface than the second carrier concentration peak, a first inter peak region arranged between the first and second carrier concentration peaks, a second inter peak region arranged between the second and third carrier concentration peaks, and an inter-peaks concentration peak arranged in the second inter peak region such that the concentration peak does not overlap the hydrogen chemical concentration peaks in the second and third carrier concentration peaks. A local minimum value of a carrier concentration in the first inter peak region is smaller than that of the second inter peak region.
-
公开(公告)号：US20210273043A1
公开(公告)日：2021-09-02
申请号：US17320115
申请日：2021-05-13
发明人： Soichi YOSHIDA
IPC分类号： H01L29/06 , H01L29/66 , H01L29/10 , H01L21/22 , H01L29/739 , H01L27/07 , H01L29/78 , H01L27/088 , H01L21/8234 , H01L29/868 , H01L27/06 , H01L29/861 , H01L21/322
摘要： A semiconductor device includes a semiconductor substrate, a transistor section, a diode section, and a boundary section provided between the transistor section and the diode section in the semiconductor substrate. The transistor section has gate trench portions which are provided from an upper surface of the semiconductor substrate to a position deeper than that of an emitter region, and to each of which a gate potential is applied. An upper-surface-side lifetime reduction region is provided on the upper surface side of the semiconductor substrate in the diode section and a partial region of the boundary section, and is not provided in a region that is overlapped with the gate trench portion in the transistor section in a surface parallel to the upper surface of the semiconductor substrate.
-
公开(公告)号：US20210265230A1
公开(公告)日：2021-08-26
申请号：US17317785
申请日：2021-05-11
发明人： Motoyoshi KUBOUCHI , Soichi YOSHIDA
IPC分类号： H01L23/34 , H01L27/06 , H01L29/06 , H01L21/22 , H01L29/32 , H01L29/40 , H01L29/739 , H01L29/10
摘要： In a semiconductor device, it is preferable to suppress a variation in characteristics of a temperature sensor. The semiconductor device is provided that includes a semiconductor substrate having a first conductivity type drift region, a transistor section provided in the semiconductor substrate, a diode section provided in the semiconductor substrate, a second conductivity type well region exposed at an upper surface of the semiconductor substrate, a temperature sensing unit that is adjacent to the diode section in top view and is provided above the well region, and an upper lifetime control region that is provided in the diode section, at the upper surface side of the semiconductor substrate, and in a region not overlapping with the temperature sensing unit in top view.
-
公开(公告)号：US20210184024A1
公开(公告)日：2021-06-17
申请号：US17183397
申请日：2021-02-24
发明人： Soichi YOSHIDA , Kenichiro SATO
IPC分类号： H01L29/739 , H01L27/06 , H01L29/423
摘要： A semiconductor device is provided, which includes: a semiconductor substrate; an emitter electrode including at least two partial electrodes arranged with an interval in a top plan view of the semiconductor substrate; and an active-side gate runner and an active-side dummy runner arranged to be sandwiched between two of the partial electrodes, wherein the semiconductor substrate includes: a gate trench portion connected to the active-side gate runner and having a longitudinal length in a first direction in the top plan view, and a dummy trench portion connected to the active-side dummy runner and having a longitudinal length in the first direction, wherein the entirety of one of the active-side gate runner and the active-side dummy runner in the first direction is covered by the other of the gate runner and the dummy runner.
-
公开(公告)号：US20210151429A1
公开(公告)日：2021-05-20
申请号：US17159102
申请日：2021-01-26
发明人： Tomoyuki OBATA , Soichi YOSHIDA
IPC分类号： H01L27/06 , H01L29/739
摘要： A semiconductor device is provided, including: a semiconductor substrate; an active portion provided on the semiconductor substrate; a first well region and a second well region provided on the semiconductor substrate and arranged sandwiching the active portion in a top view; a peripheral well region provided on the semiconductor substrate and arranged enclosing the active portion in a top view; an intermediate well region provided on the semiconductor substrate and arranged between the first well region and the second well region in a top view; a first pad arranged above the first well region and a second pad arranged above the second well region; and a temperature sense diode arranged above the intermediate well region.
-
-
-
-
-
-
-
-
-
搜索结果
26 条记录 (耗时 0.019 秒)
