- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
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申请号： US17320115申请日： 2021-05-13
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公开(公告)号： US20210273043A1公开(公告)日： 2021-09-02
- 发明人: Soichi YOSHIDA
- 申请人： FUJI ELECTRIC CO., LTD.
- 申请人地址： JP Kanagawa
- 专利权人： FUJI ELECTRIC CO., LTD.
- 当前专利权人： FUJI ELECTRIC CO., LTD.
- 当前专利权人地址： JP Kanagawa
- 优先权： JP2016-244936 20161216
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/66 ; H01L29/10 ; H01L21/22 ; H01L29/739 ; H01L27/07 ; H01L29/78 ; H01L27/088 ; H01L21/8234 ; H01L29/868 ; H01L27/06 ; H01L29/861 ; H01L21/322
摘要：
A semiconductor device includes a semiconductor substrate, a transistor section, a diode section, and a boundary section provided between the transistor section and the diode section in the semiconductor substrate. The transistor section has gate trench portions which are provided from an upper surface of the semiconductor substrate to a position deeper than that of an emitter region, and to each of which a gate potential is applied. An upper-surface-side lifetime reduction region is provided on the upper surface side of the semiconductor substrate in the diode section and a partial region of the boundary section, and is not provided in a region that is overlapped with the gate trench portion in the transistor section in a surface parallel to the upper surface of the semiconductor substrate.
公开/授权文献
- US11552165B2 Semiconductor device and manufacturing method of 1HE same 公开/授权日：2023-01-10
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