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公开(公告)号：US12125797B2
公开(公告)日：2024-10-22
申请号：US17856154
申请日：2022-07-01
IPC分类号： H01L23/538 , H01L21/48 , H01L21/56 , H01L21/683 , H01L23/00 , H01L25/065 , H01L23/31 , H01L23/498 , H01L25/00 , H01L25/10
CPC分类号： H01L23/5386 , H01L21/4857 , H01L21/486 , H01L21/561 , H01L21/566 , H01L21/6835 , H01L23/5383 , H01L23/5384 , H01L23/5389 , H01L24/18 , H01L24/19 , H01L24/20 , H01L25/0657 , H01L21/568 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L25/105 , H01L25/50 , H01L2221/68345 , H01L2221/68359 , H01L2221/68372 , H01L2221/68381 , H01L2224/04105 , H01L2224/12105 , H01L2224/16227 , H01L2224/18 , H01L2224/24227 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2224/97 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2924/1203 , H01L2924/1304 , H01L2924/13091 , H01L2924/1431 , H01L2224/97 , H01L2224/83 , H01L2224/97 , H01L2224/81 , H01L2924/13091 , H01L2924/00012 , H01L2924/1431 , H01L2924/00012 , H01L2924/1304 , H01L2924/00012 , H01L2924/1203 , H01L2924/00012
摘要： A package structure is provided. The package structure includes a semiconductor chip and a first dielectric layer over the semiconductor chip and extending across opposite sidewalls of the semiconductor chip. The package structure also includes a conductive layer over the first dielectric layer, and the conductive layer has multiple first protruding portions extending into the first dielectric layer. The package structure further includes a second dielectric layer over the first dielectric layer and the conductive layer. The second dielectric layer has multiple second protruding portions extending into the first dielectric layer. Each of the first protruding portions and the second protruding portions is thinner than the first dielectric layer.
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公开(公告)号：US12057359B2
公开(公告)日：2024-08-06
申请号：US17884499
申请日：2022-08-09
发明人： Chun-Cheng Lin , Ching-Hua Hsieh , Chen-Hua Yu , Chung-Shi Liu , Chih-Wei Lin
IPC分类号： H01L23/31 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/29 , H01L23/367 , H01L23/498 , H01L23/538 , H01L25/065 , B29C45/14 , B29K63/00 , B29L31/34
CPC分类号： H01L23/3114 , H01L21/4853 , H01L21/486 , H01L21/565 , H01L21/566 , H01L23/295 , H01L23/3121 , H01L23/3135 , H01L23/3675 , H01L23/49816 , H01L23/5384 , H01L23/5385 , H01L23/5386 , H01L24/16 , H01L24/32 , H01L24/33 , H01L24/73 , H01L24/81 , H01L24/95 , H01L25/0655 , B29C45/14655 , B29K2063/00 , B29K2995/0007 , B29L2031/3406 , H01L24/13 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13118 , H01L2224/1312 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13149 , H01L2224/13155 , H01L2224/16225 , H01L2224/33181 , H01L2224/73204 , H01L2224/73253 , H01L2224/81192 , H01L2924/1431 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/19101 , H01L2924/3511 , H01L2924/3511 , H01L2924/00 , H01L2224/13111 , H01L2924/00014 , H01L2224/13139 , H01L2924/00014 , H01L2224/13147 , H01L2924/00014 , H01L2224/13155 , H01L2924/00014 , H01L2224/13113 , H01L2924/00014 , H01L2224/13118 , H01L2924/00014 , H01L2224/13149 , H01L2924/00014 , H01L2224/1312 , H01L2924/00014 , H01L2224/13109 , H01L2924/00014 , H01L2224/13144 , H01L2924/00014 , H01L2924/181 , H01L2924/00012 , H01L2224/73204 , H01L2224/32225 , H01L2224/16225 , H01L2924/00012 , H01L2924/15311 , H01L2224/73204 , H01L2224/16225 , H01L2224/32225 , H01L2924/00012 , H01L2924/1431 , H01L2924/00012
摘要： A semiconductor package including a circuit substrate, an interposer structure, a plurality of dies, and an insulating encapsulant is provided. The interposer structure is disposed on the circuit substrate. The plurality of dies is disposed on the interposer structure, wherein the plurality of dies is electrically connected to the circuit substrate through the interposer structure. The insulating encapsulant is disposed on the circuit substrate, wherein the insulating encapsulant surrounds the plurality of dies and the interposer structure and encapsulates at least the interposer structure, the insulating encapsulant has a groove that surrounds the interposer structure and the plurality of dies, and the interposer structure and the plurality of dies are confined to be located within the groove.
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公开(公告)号：US12033992B2
公开(公告)日：2024-07-09
申请号：US17396781
申请日：2021-08-09
IPC分类号： H01L25/16 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/31 , H01L23/498 , H01L23/538
CPC分类号： H01L25/16 , H01L21/4853 , H01L21/4857 , H01L21/568 , H01L23/3128 , H01L23/3135 , H01L23/49822 , H01L23/5381 , H01L24/16 , H01L2224/16225 , H01L2224/17177
摘要： A package includes a first die, a second die, a bridge structure, a first redistribution structure, and an encapsulant. The first die and the second die are disposed side by side. The bridge structure is disposed over the first die and the second die. The bridge structure includes a plurality of routing patterns and a plurality of connectors disposed on the plurality of routing patterns. The first redistribution structure is sandwiched between the first die and the bridge structure and is sandwiched between the second die and the bridge structure. The plurality of connectors of the bridge structure is in physical contact with the first redistribution structure. The encapsulant encapsulates the bridge structure. The plurality of routing patterns and the plurality of connectors of the bridge structure are completely spaced apart from the encapsulant.
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公开(公告)号：US12021037B2
公开(公告)日：2024-06-25
申请号：US18077778
申请日：2022-12-08
发明人： Yi-Da Tsai , Cheng-Ping Lin , Wei-Hung Lin , Chih-Wei Lin , Ming-Da Cheng , Ching-Hua Hsieh , Chung-Shi Liu
IPC分类号： H01L23/538 , H01L21/48 , H01L21/56 , H01L21/683 , H01L23/00 , H01L23/29 , H01L23/31 , H01L25/00 , H01L25/065
CPC分类号： H01L23/5389 , H01L21/4853 , H01L21/4857 , H01L21/56 , H01L21/561 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L23/295 , H01L23/3135 , H01L23/5386 , H01L24/17 , H01L24/81 , H01L24/96 , H01L24/97 , H01L23/3128 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L25/0655 , H01L25/50 , H01L2221/68345 , H01L2221/68381 , H01L2224/1146 , H01L2224/11462 , H01L2224/13101 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/16227 , H01L2224/73204 , H01L2224/81005 , H01L2224/81193 , H01L2224/81815 , H01L2924/1203 , H01L2924/1304 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/3511 , H01L2924/3511 , H01L2924/00 , H01L2924/1304 , H01L2924/00012 , H01L2924/1203 , H01L2924/00012 , H01L2224/13101 , H01L2924/014 , H01L2924/00014 , H01L2924/181 , H01L2924/00012 , H01L2224/73204 , H01L2224/32225 , H01L2224/16225 , H01L2924/00012 , H01L2924/15311 , H01L2224/73204 , H01L2224/16225 , H01L2224/32225 , H01L2924/00012 , H01L2224/81815 , H01L2924/00014
摘要： Package structures and methods for forming the same are provided. The method includes forming a passivation layer having an opening and forming a first seed layer in the opening. The method further includes filling the opening with a conductive layer over the first seed layer and bonding an integrated circuit die to the conductive layer over a first side of the passivation layer. The method further includes removing a portion of the first seed layer to expose a top surface of the conductive layer and to partially expose a first sidewall of the passivation layer from a second side of the passivation layer and forming a second seed layer over the top surface of the conductive layer and over the first sidewall of the passivation layer.
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公开(公告)号：US20240063081A1
公开(公告)日：2024-02-22
申请号：US17890262
申请日：2022-08-17
发明人： Kai-Fung Chang , Sheng-Feng Weng , Ming-Yu Yen , Wei-Jhan Tsai , Chao-Wei Chiu , Chao-Wei Li , Chih-Wei Lin , Ching-Hua Hsieh
IPC分类号： H01L23/367 , H01L23/48 , H01L23/00 , H01L21/768 , H01L23/498
CPC分类号： H01L23/3677 , H01L23/481 , H01L24/08 , H01L21/76898 , H01L24/80 , H01L23/49816 , H01L23/49833 , H01L23/49838 , H01L23/49822 , H01L2924/182 , H01L2924/37001 , H01L2924/3511 , H01L2224/08056 , H01L2224/08059 , H01L2224/08225 , H01L2224/80895 , H01L2224/80896 , H01L2224/80097
摘要： A package structure including a semiconductor die, an encapsulant, a redistribution structure, and a through insulating via is provided. The first redistribution structure includes an insulating layer and a circuit layer. The semiconductor die is disposed on the first redistribution structure. The semiconductor die includes a semiconductor base, through semiconductor vias, a dielectric layer, and bonding connectors. Through semiconductor vias penetrate through the semiconductor base. The dielectric layer is disposed on a backside of the semiconductor base. The dielectric layer of the semiconductor die is bonded with the insulating layer of the first redistribution structure. The bonding connectors are embedded in the dielectric layer and connected to the through semiconductor vias. The bonding connectors of the semiconductor die are bonded with bonding pads of the circuit layer. The encapsulant is disposed on the first redistribution structure and encapsulates the semiconductor die.
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公开(公告)号：US11855006B2
公开(公告)日：2023-12-26
申请号：US17389313
申请日：2021-07-29
发明人： Kai-Ming Chiang , Chao-wei Li , Wei-Lun Tsai , Chia-Min Lin , Yi-Da Tsai , Sheng-Feng Weng , Yu-Hao Chen , Sheng-Hsiang Chiu , Chih-Wei Lin , Ching-Hua Hsieh
IPC分类号： H01L23/00 , H01L21/48 , H01L21/56 , H01L21/683 , H01L23/31 , H01L23/538 , H01L25/065 , H01L25/00
CPC分类号： H01L23/562 , H01L21/4853 , H01L21/4857 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/3135 , H01L23/5383 , H01L23/5386 , H01L25/0652 , H01L25/50 , H01L2221/68372 , H01L2225/06541 , H01L2225/06586
摘要： A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.
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公开(公告)号：US20230360949A1
公开(公告)日：2023-11-09
申请号：US18356212
申请日：2023-07-20
IPC分类号： H01L21/683 , H01L21/82 , H01L21/56 , H01L23/00
CPC分类号： H01L21/6836 , H01L21/82 , H01L21/568 , H01L24/05 , H01L24/13 , H01L2224/10122 , H01L2221/68386 , H01L2221/68377 , H01L2224/0231 , H01L2224/02381 , H01L2221/6834
摘要： A semiconductor package includes a semiconductor device, an encapsulating material encapsulating the semiconductor device, and a redistribution structure disposed over the encapsulating material and the semiconductor device. The semiconductor device includes conductive bumps and a dielectric film encapsulating the conductive bumps, where a material of the dielectric film comprises an epoxy resin and a filler. The conductive bumps are isolated from the encapsulating material by the dielectric film. The redistribution structure is electrically connected to the conductive bumps.
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公开(公告)号：US20230347561A1
公开(公告)日：2023-11-02
申请号：US18346850
申请日：2023-07-04
发明人： Sheng-Feng Weng , Ching-Hua Hsieh , Chung-Shi Liu , Chih-Wei Lin , Sheng-Hsiang Chiu , Yao-Tong Lai , Chia-Min Lin
CPC分类号： B29C45/14655 , H01L21/565 , B29C45/03 , B29C45/0025
摘要： A molding apparatus is configured for molding a semiconductor device and includes a lower mold and an upper mold. The lower mold is configured to carry the semiconductor device. The upper mold is disposed above the lower mold for receiving the semiconductor device and includes a mold part and a dynamic part. The mold part is configured to cover the upper surface of the semiconductor device. The dynamic part is disposed around a device receiving region of the upper mold and configured to move relatively to the mold part. A molding method and a molded semiconductor device are also provided.
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公开(公告)号：US11776838B2
公开(公告)日：2023-10-03
申请号：US17525975
申请日：2021-11-15
IPC分类号： H01L21/683 , H01L21/82 , H01L21/56 , H01L23/00
CPC分类号： H01L21/6836 , H01L21/568 , H01L21/82 , H01L24/05 , H01L24/13 , H01L2221/6834 , H01L2221/68377 , H01L2221/68386 , H01L2224/0231 , H01L2224/02381 , H01L2224/10122
摘要： A semiconductor package includes a semiconductor device, an encapsulating material encapsulating the semiconductor device, and a redistribution structure disposed over the encapsulating material and the semiconductor device. The semiconductor device includes an active surface having conductive bumps and a dielectric film encapsulating the conductive bumps, where a material of the dielectric film comprises an epoxy resin and a filler. The conductive bumps are isolated from the encapsulating material by the dielectric film, and the redistribution structure is electrically connected to the conductive bumps. A manufacturing method of a semiconductor package is also provided.
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公开(公告)号：US11731327B2
公开(公告)日：2023-08-22
申请号：US17876595
申请日：2022-07-29
发明人： Sheng-Feng Weng , Ching-Hua Hsieh , Chung-Shi Liu , Chih-Wei Lin , Sheng-Hsiang Chiu , Yao-Tong Lai , Chia-Min Lin
CPC分类号： B29C45/14655 , B29C45/0025 , B29C45/03 , H01L21/565
摘要： A molding apparatus is configured for molding a semiconductor device and includes a lower mold and an upper mold. The lower mold is configured to carry the semiconductor device. The upper mold is disposed above the lower mold for receiving the semiconductor device and includes a mold part and a dynamic part. The mold part is configured to cover the upper surface of the semiconductor device. The dynamic part is disposed around a device receiving region of the upper mold and configured to move relatively to the mold part. A molding method and a molded semiconductor device are also provided.
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