- 专利标题： Semiconductor device and method
-
申请号： US17120825申请日： 2020-12-14
-
公开(公告)号： US11855014B2公开(公告)日： 2023-12-26
- 发明人: Chen-Hua Yu , Ming-Che Ho , Hung-Jui Kuo , Yi-Wen Wu , Tzung-Hui Lee
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 分案原申请号： US15182723 2016.06.15
- 主分类号： H01L23/498
- IPC分类号： H01L23/498 ; H01L23/00 ; H01L21/66 ; H01L23/538
摘要：
A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.
公开/授权文献
- US20210098397A1 Semiconductor Device and Method 公开/授权日：2021-04-01
信息查询
IPC分类:
