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公开(公告)号：US20240290745A1
公开(公告)日：2024-08-29
申请号：US18572708
申请日：2023-03-23
发明人： Daizo ODA , Motoki ETO , Takashi YAMADA , Teruo HAIBARA , Ryo OISHI
IPC分类号： H01L23/00 , G01N23/203 , G01N23/2276
CPC分类号： H01L24/45 , H01L24/43 , H01L24/85 , G01N23/203 , G01N23/2276 , G01N2223/601 , G01N2223/602 , G01N2223/611 , H01L2224/4321 , H01L2224/437 , H01L2224/43825 , H01L2224/43826 , H01L2224/43848 , H01L2224/45147 , H01L2224/45541 , H01L2224/45565 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/85035 , H01L2224/85203 , H01L2224/85207 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01049 , H01L2924/01051 , H01L2924/01052 , H01L2924/3512 , H01L2924/3651
摘要： The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy and a coating layer containing conductive metal other than Cu formed on a surface of the core material. The coating layer has a region containing Ni as a main component on a core material side, and has a region containing Au and Ni on a wire surface side, in a thickness direction of the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, a ratio of a concentration CAu (mass %) of Au to a concentration CNi (mass %) of Ni relative to the entire wire is 0.02
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公开(公告)号：US20240290743A1
公开(公告)日：2024-08-29
申请号：US18572127
申请日：2022-03-16
发明人： Daizo ODA , Motoki ETO , Takashi YAMADA , Teruo HAIBARA , Ryo OISHI
IPC分类号： H01L23/00 , G01N23/203 , G01N23/2276
CPC分类号： H01L24/45 , H01L24/43 , H01L24/85 , G01N23/203 , G01N23/2276 , G01N2223/601 , G01N2223/602 , G01N2223/611 , H01L2224/4321 , H01L2224/437 , H01L2224/43825 , H01L2224/43848 , H01L2224/45147 , H01L2224/45541 , H01L2224/45565 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/85035 , H01L2224/85203 , H01L2224/85207 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01051 , H01L2924/01052 , H01L2924/3512 , H01L2924/3651
摘要： There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieves a favorable bond reliability of the 2nd bonded part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices is characterized in that the bonding wire includes: a core material of Cu or Cu alloy; and a coating layer containing conductive metal other than Cu formed on a surface of the core material, wherein the coating layer has a region containing Pd as a main component on a core material side, and has a region containing Ni and Pd in a range from a wire surface to a depth of 0.5 d when a thickness of the coating layer is defined as d (nm) in a thickness direction of the coating layer, the thickness d of the coating layer is 10 nm or more and 130 nm or less, a ratio CNi/CPd of a concentration CNi (mass %) of Ni to a concentration CPd (mass %) of Pd relative to the entire wire is 0.02 or more and 0.7 or less, a position indicating a maximum concentration of Ni is present in the range from the wire surface to a depth of 0.5 d in a concentration profile in a depth direction of the wire, and the maximum concentration of Ni is 10 atomic % or more, and at least one of the following conditions (i) and (ii) is satisfied:
(i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less
(ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.-
公开(公告)号：US12066399B2
公开(公告)日：2024-08-20
申请号：US18353017
申请日：2023-07-14
IPC分类号： G01N27/414 , C12Q1/6818 , C12Q1/6874 , G01N33/543 , H01L27/088 , H01L29/423 , H01L29/78
CPC分类号： G01N27/4148 , C12Q1/6818 , C12Q1/6874 , G01N27/4145 , G01N33/54373 , G01N33/5438 , H01L27/088 , H01L29/78 , H01L29/42324 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01073 , H01L2924/14 , H01L2924/1433 , Y10T436/22
摘要： Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
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公开(公告)号：US20240055384A1
公开(公告)日：2024-02-15
申请号：US18496069
申请日：2023-10-27
申请人： ROHM CO., LTD.
发明人： Kazumasa TANIDA , Osamu MIYATA
IPC分类号： H01L23/00 , H01L23/31 , H01L23/498 , H01L21/56 , H01L23/52
CPC分类号： H01L24/16 , H01L23/3157 , H01L23/49811 , H01L24/17 , H01L21/563 , H01L24/28 , H01L23/52 , H01L23/3185 , H01L23/49816 , H01L23/49838 , H01L23/562 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L23/3142 , H01L2924/3512 , H01L2224/01 , H01L2924/183 , H01L2924/153 , H01L24/01 , H01L2224/05573 , H01L2224/05568 , H01L2924/00014 , H01L2924/01006 , H01L2224/26175 , H01L2924/14 , H01L2224/16225 , H01L2224/73204 , H01L2224/83102 , H01L2224/92125 , H01L2924/01004 , H01L2924/01015 , H01L2924/01033 , H01L2924/01075 , H01L2224/32225 , H01L2224/0554 , H01L24/75 , H01L2224/16227 , H01L2224/75252 , H01L2224/81191 , H01L2224/81815 , H10K50/8426
摘要： A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.
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公开(公告)号：US11682640B2
公开(公告)日：2023-06-20
申请号：US17103810
申请日：2020-11-24
发明人： Mukta Ghate Farooq , James J. Kelly
IPC分类号： H01L25/065 , H01L23/00 , H01L25/00 , H01L21/683 , H01L21/768
CPC分类号： H01L24/05 , H01L21/6835 , H01L21/76898 , H01L24/03 , H01L25/0652 , H01L25/50 , H01L2221/68372 , H01L2224/0345 , H01L2224/03462 , H01L2224/0401 , H01L2224/0569 , H01L2224/05084 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05562 , H01L2224/05573 , H01L2224/05657 , H01L2224/05663 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05673 , H01L2224/05676 , H01L2224/05678 , H01L2224/05684 , H01L2225/06513 , H01L2225/06541 , H01L2225/06582 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078
摘要： A method of fabricating an under-bump metallurgy (UBM) structure that is free of gold processing includes forming a titanium layer on top of a far back of line (FBEOL) of a semiconductor. A first copper layer is formed on top of the titanium layer. A photoresist (PR) layer is formed on top of the first copper layer between traces of the FBEOL to provide a cavity to the FBEOL traces. A top copper layer is formed on top of the first copper layer. A protective surface layer (PSL) is formed on top of the top copper layer.
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公开(公告)号：US20230187275A1
公开(公告)日：2023-06-15
申请号：US18164153
申请日：2023-02-03
发明人： Katsuhiko HOTTA , Kyoko SASAHARA
IPC分类号： H01L21/768 , H01L21/8238 , H01L23/525 , H01L23/532 , H01L23/00 , H01L23/522 , H01L23/528 , H01L21/8234
CPC分类号： H01L21/76832 , H01L21/76808 , H01L21/76811 , H01L21/76834 , H01L21/76841 , H01L21/76895 , H01L21/823475 , H01L21/823871 , H01L23/528 , H01L23/5226 , H01L23/5258 , H01L23/5283 , H01L23/5329 , H01L23/53209 , H01L23/53238 , H01L23/53295 , H01L24/11 , H01L2224/13099 , H01L2924/00 , H01L2924/014 , H01L2924/14 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1306 , H01L2924/04941 , H01L2924/04953 , H01L2924/12042 , H01L2924/19043 , H01L2924/30105
摘要： For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.
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公开(公告)号：US20190088537A1
公开(公告)日：2019-03-21
申请号：US16169796
申请日：2018-10-24
发明人： Katsuhiko HOTTA , Kyoko SASAHARA
IPC分类号： H01L21/768 , H01L21/8234 , H01L23/528 , H01L23/522 , H01L23/532
CPC分类号： H01L21/76832 , H01L21/76808 , H01L21/76811 , H01L21/76834 , H01L21/76841 , H01L21/76895 , H01L21/823475 , H01L21/823871 , H01L23/5226 , H01L23/5258 , H01L23/528 , H01L23/5283 , H01L23/53209 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L24/11 , H01L2224/13099 , H01L2924/00 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/12042 , H01L2924/1306 , H01L2924/14 , H01L2924/19043 , H01L2924/30105
摘要： For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.
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公开(公告)号：US20180334708A1
公开(公告)日：2018-11-22
申请号：US15949456
申请日：2018-04-10
发明人： Jonathan ROTHBERG , Wolfgang HINZ , Kim JOHNSON , James BUSTILLO
IPC分类号： C12Q1/6869 , G01N27/414 , H01L27/088 , H01L23/00 , C12Q1/6874 , H01L21/306 , H01L29/78
CPC分类号： C12Q1/6869 , C12Q1/6874 , G01N27/414 , G01N27/4145 , G01N27/4148 , H01L21/306 , H01L24/18 , H01L24/20 , H01L24/82 , H01L27/088 , H01L29/78 , H01L2224/04105 , H01L2224/16 , H01L2224/76155 , H01L2224/82102 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01052 , H01L2924/01056 , H01L2924/01059 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01082 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , C12Q2565/607 , C12Q2565/301 , C12Q2533/101 , H01L2924/00
摘要： Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
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9.发明授权公开(公告)号：US10074599B2
公开(公告)日：2018-09-11
申请号：US15620191
申请日：2017-06-12
发明人： Chua Swee Kwang , Yong Poo Chia
IPC分类号： H01L23/495 , H01L23/00 , H01L23/047 , H01L21/48 , H01L23/31
CPC分类号： H01L23/49575 , H01L21/4821 , H01L21/4825 , H01L21/4839 , H01L23/047 , H01L23/3114 , H01L23/49503 , H01L23/4951 , H01L24/32 , H01L24/48 , H01L29/0657 , H01L2224/05599 , H01L2224/32145 , H01L2224/32245 , H01L2224/45015 , H01L2224/45099 , H01L2224/48091 , H01L2224/48247 , H01L2224/48464 , H01L2224/73265 , H01L2924/00014 , H01L2924/01006 , H01L2924/01015 , H01L2924/01027 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/10155 , H01L2924/10158 , H01L2924/14 , H01L2924/181 , H01L2924/207 , H01L2924/00012 , H01L2224/85399
摘要： Semiconductor dies with recesses, associated leadframes, and associated systems and methods are disclosed. A semiconductor system in accordance with one embodiment includes a semiconductor die having a first surface and a second surface facing opposite from the first surface, with the first surface having a die recess. The system can further include a support paddle carrying the semiconductor die, with at least part of the support paddle being received in the die recess. In particular embodiments, the support paddle can form a portion of a leadframe. In other particular embodiments, the support paddle can include a paddle surface that faces toward the semiconductor die and has an opening extending through the paddle surface and through the support paddle.
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公开(公告)号：US20180247908A1
公开(公告)日：2018-08-30
申请号：US15967820
申请日：2018-05-01
申请人： INTEL CORPORATION
发明人： Munehiro Toyama , Siew Fong Tai , Kian Sin Sim , Charavanakumara Gurumurthy , Tamil Selvy Selvamuniandy
CPC分类号： H01L24/13 , H01L24/03 , H01L24/05 , H01L24/10 , H01L24/11 , H01L24/14 , H01L24/29 , H01L2224/0401 , H01L2224/05147 , H01L2224/05599 , H01L2224/11464 , H01L2224/13 , H01L2224/13017 , H01L2224/13084 , H01L2224/13099 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13564 , H01L2224/13611 , H01L2224/13639 , H01L2224/13647 , H01L2224/29147 , H01L2224/29155 , H01L2924/00014 , H01L2924/01005 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/14 , H01L2924/1433 , H01L2924/35 , H05K3/244 , H01L2924/00
摘要： A method and device for input/output connections is provided. Devices and methods for connection structure are shown with improved mechanical properties such as hardness and abrasion resistance. Land grid array structures are provided that are less expensive to manufacture due to reductions in material cost such as gold. Ball grid array structures are provided with improved resistance to corrosion during fabrication. Ball grid array structures are also provided with improved mechanical properties resulting in improved shock testing results.
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