公开(公告)号：US20170271314A1

公开(公告)日：2017-09-21

申请号：US15417243

申请日：2017-01-27

申请人： FUJI ELECTRIC CO., LTD.

发明人： Katsunori UENO

IPC分类号： H01L25/18 ,  H01L23/31 ,  H01L29/20 ,  H01L29/739 ,  H01L29/16

CPC分类号： H01L25/18 ,  H01L23/3114 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/7392 ,  H01L29/7396 ,  H01L29/74 ,  H01L29/7802 ,  H01L2224/01 ,  H01L2924/15174

摘要： Inside an IGBT using GaN or SiC, light having an energy of approximately 3 [eV] is generated. Therefore, defects are caused in the gate insulating film of the IGBT. Furthermore, the charge trapped at a deep level becomes excited and moves to the channel region, thereby causing the gate threshold voltage to fluctuate from the predetermined value. Provided is a semiconductor device including a normally-ON semiconductor element that includes a first semiconductor layer capable of conductivity modulation and a first gate electrode, but does not include a gate insulating film between the first gate electrode and the first semiconductor layer; and a normally-OFF semiconductor element that includes a second semiconductor layer, a second gate electrode, and a gate insulating film between the second semiconductor layer and the second gate electrode. The normally-ON semiconductor element and the normally-OFF semiconductor element are connected in series.

公开(公告)号：US20170170082A1

公开(公告)日：2017-06-15

申请号：US15442084

申请日：2017-02-24

申请人： Infineon Technologies AG

发明人： Georg Meyer-Berg ,  Reinhard Pufall ,  Michael Goroll ,  Rainer Dudek

IPC分类号： H01L23/04 ,  H01L25/10 ,  H05K1/18

CPC分类号： H01L23/04 ,  G06F17/5068 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/49513 ,  H01L23/49541 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49811 ,  H01L24/81 ,  H01L25/10 ,  H01L2224/01 ,  H01L2224/291 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/83447 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/35121 ,  H05K1/181 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A semiconductor package includes a block having opposing first and second main surfaces and sides between the first and second main surfaces, and an encapsulation material at least partly covering the block. One or both of the main surfaces of the block has recessed regions. The recessed regions do not extend completely through the block from one main surface to the other main surface. The encapsulation material fills the recessed regions to form an interlocked connection between the block and the encapsulation material. Additional semiconductor package embodiments are provided.

公开(公告)号：US20170141018A1

公开(公告)日：2017-05-18

申请号：US15354474

申请日：2016-11-17

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： Kenya KAWANO ,  Tetsuya ISHIMARU ,  Shinichi KURITA ,  Takeshi TERAKAWA

IPC分类号： H01L23/495 ,  H02K11/04 ,  H01L23/31

CPC分类号： H01L23/49568 ,  H01L23/051 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49589 ,  H01L2224/01 ,  H01L2224/73265 ,  H02K11/046

摘要： Provided are a semiconductor device realized easily at low cost without requiring a complicated manufacturing process, and an alternator using the same. The semiconductor device includes a base having a base seat, a lead having a lead header, and an electronic circuit body, wherein the electronic circuit body is arranged between the base and the lead; the base seat is connected to a first surface of the electronic circuit body; the lead header is connected to a second surface of the electronic circuit body; the electronic circuit body is integrally covered by resin, including a transistor circuit chip having a switching element, a control circuit chip for controlling the switching element, a drain frame, and a source frame; either one of the drain frame and the source frame, and the base are connected; and the other one of the drain frame and the source frame, and the lead are connected.

公开(公告)号：US20160064309A1

公开(公告)日：2016-03-03

申请号：US14723552

申请日：2015-05-28

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： An-Jhih Su ,  Hsien-Wei Chen

IPC分类号： H01L23/495 ,  H01L21/48 ,  H01L23/18 ,  H01L21/56 ,  H01L21/463

CPC分类号： H01L24/03 ,  H01L21/31053 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/563 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/50 ,  H01L23/5383 ,  H01L23/5389 ,  H01L24/09 ,  H01L24/11 ,  H01L24/17 ,  H01L24/19 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/01 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16237 ,  H01L2224/16265 ,  H01L2224/19 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32265 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73209 ,  H01L2224/73217 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/81192 ,  H01L2224/83005 ,  H01L2224/92124 ,  H01L2224/92244 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2924/00014

摘要： According to an exemplary embodiment, a semiconductor package is provided. The semiconductor package includes: a chip having a plurality of joint pads; a component having a plurality of metal caps on one side and having a grinded surface on the other side, wherein the metal caps are in contact with the joint pads of the chip.

摘要翻译： 根据示例性实施例，提供半导体封装。 半导体封装包括：具有多个接头焊盘的芯片; 在一侧具有多个金属盖并且在另一侧具有磨削表面的部件，其中金属帽与芯片的接合焊盘接触。

公开(公告)号：US09129840B2

公开(公告)日：2015-09-08

申请号：US14470076

申请日：2014-08-27

申请人： FUJI ELECTRIC CO., LTD.

发明人： Norihiro Nashida

IPC分类号： H01L23/00 ,  H05K3/32 ,  H05K3/40 ,  H01L23/373 ,  H01L23/433 ,  H01L23/498 ,  H01L25/07 ,  H05K3/34

CPC分类号： H01L24/09 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/49811 ,  H01L23/49833 ,  H01L24/01 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/81 ,  H01L24/92 ,  H01L25/072 ,  H01L2224/0401 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11848 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/13147 ,  H01L2224/13294 ,  H01L2224/13339 ,  H01L2224/13347 ,  H01L2224/13369 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/16058 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1623 ,  H01L2224/16238 ,  H01L2224/16501 ,  H01L2224/16505 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/73253 ,  H01L2224/81048 ,  H01L2224/81065 ,  H01L2224/81091 ,  H01L2224/81095 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81359 ,  H01L2224/81385 ,  H01L2224/8184 ,  H01L2224/92242 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/10272 ,  H01L2924/1203 ,  H01L2924/12032 ,  H01L2924/1304 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/35 ,  H01L2924/351 ,  H05K3/32 ,  H05K3/3436 ,  H05K3/4015 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/01 ,  H01L2224/80 ,  H01L2924/00012

摘要： When a conductive post is bonded to a bonding target member such as a semiconductor chip or an insulating substrate with conductive patterns by using metal nanoparticles, a strong bonding layer can be obtained by forming a bottom surface of the distal end of the conductive post in a concave shape.

摘要翻译： 当通过使用金属纳米颗粒将导电柱结合到诸如半导体芯片或具有导电图案的绝缘基板的接合目标构件时，可以通过将导电柱的远端的底表面形成在 凹形。

公开(公告)号：US20150109738A1

公开(公告)日：2015-04-23

申请号：US14525780

申请日：2014-10-28

申请人： FUJI ELECTRIC CO., LTD.

发明人： Takafumi YAMADA ,  Tetsuya INABA ,  Yoshinari IKEDA ,  Katsuhiko YANAGAWA ,  Yoshikazu TAKAHASHI

IPC分类号： H05K7/20 ,  H05K7/02

CPC分类号： H05K7/20509 ,  H01L23/3121 ,  H01L23/4006 ,  H01L23/4334 ,  H01L23/49811 ,  H01L25/115 ,  H01L25/18 ,  H01L2224/01 ,  H01L2924/0002 ,  H05K7/02 ,  H01L2924/00

摘要： A semiconductor device has a single unit capable of improving adhesion to a cooling body and a heat dissipation performance, and an aggregate of the single units is capable of configuring any circuit at a low cost. A single unit includes copper blocks, an insulating substrate with a conductive pattern, an IGBT chip, a diode chip, a collector terminal pin, implant pins fixed to the chips by solder, a printed circuit board having the implant pins fixed thereto, an emitter terminal pin, a control terminal pin, a collector terminal pin, and a resin case having the above-mentioned components sealed therein. The copper blocks make it possible to improve adhesion to a cooling body and the heat dissipation performance. A plurality of single units can be combined with an inter-unit wiring board to form any circuit.

摘要翻译： 半导体器件具有能够改善与冷却体的粘附性和散热性能的单个单元，并且单个单元的聚集体能够以低成本构成任何电路。 单个单元包括铜块，具有导电图案的绝缘衬底，IGBT芯片，二极管芯片，集电极端子引脚，通过焊料固定到芯片的注入引脚，具有固定到其上的注入引脚的印刷电路板，发射器 端子销，控制端子销，集电极端子销和具有密封在其中的上述部件的树脂壳体。 铜块使得可以提高对冷却体的粘附性和散热性能。 多个单个单元可以与单元间布线板组合以形成任何电路。

公开(公告)号：US20130207525A1

公开(公告)日：2013-08-15

申请号：US13814161

申请日：2011-06-07

申请人： Alfred Goerlach

发明人： Alfred Goerlach

IPC分类号： H02K11/04

CPC分类号： H02K11/046 ,  H01L23/492 ,  H01L29/872 ,  H01L29/8725 ,  H01L2224/01 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2924/12032 ,  H02M7/003 ,  H02M7/06 ,  H01L2924/00

摘要： A rectifier system having press-in diodes that contain a Schottky diode as semiconductor element. The Schottky diodes are operated in an operating range in which the diode losses increase as the temperature increases.

摘要翻译： 一种具有压入二极管的整流器系统，其包含肖特基二极管作为半导体元件。 肖特基二极管在二极管损耗随温度升高而增加的工作范围内工作。

公开(公告)号：US07554136B2

公开(公告)日：2009-06-30

申请号：US11078687

申请日：2005-03-11

申请人： Fumikazu Takayanagi ,  Yoshiaki Moro ,  Hirokazu Sanpei

发明人： Fumikazu Takayanagi ,  Yoshiaki Moro ,  Hirokazu Sanpei

IPC分类号： G01C19/56

CPC分类号： B81B7/007 ,  H01L2224/01

摘要： A micro device that is manufactured by semiconductor process and is electrically connected to outside for its operation. The micro device includes a circuit board, an electrode pad being provided on the circuit board, a lead substrate being provided substantially parallel to the circuit board, and a lead of conductive member being electrically connected to the electrode pad by being bent in a direction away from a surface of the lead substrate, one end of the lead being adhered to the lead substrate and the other end being a free end.

摘要翻译： 一种微型器件，其通过半导体工艺制造并且电连接到外部用于其操作。 微型装置包括电路板，电路板设置在电路板上，引线基板大致平行于电路板设置，导电部件的引线通过沿着方向弯曲而与电极焊盘电连接 从引线基板的表面，引线的一端粘附到引线基板，另一端是自由端。

公开(公告)号：US11842972B2

公开(公告)日：2023-12-12

申请号：US17752835

申请日：2022-05-24

申请人： ROHM CO., LTD.

发明人： Kazumasa Tanida ,  Osamu Miyata

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/56 ,  H01L23/52 ,  H10K50/842

CPC分类号： H01L24/16 ,  H01L21/563 ,  H01L23/3142 ,  H01L23/3157 ,  H01L23/3185 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/52 ,  H01L23/562 ,  H01L24/17 ,  H01L24/28 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/01 ,  H01L24/75 ,  H01L2224/01 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/26175 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75252 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/14 ,  H01L2924/153 ,  H01L2924/183 ,  H01L2924/3512 ,  H10K50/8426

摘要： A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.

公开(公告)号：US20180175007A1

公开(公告)日：2018-06-21

申请号：US15803706

申请日：2017-11-03

申请人： Fuji Electric Co., Ltd.

发明人： Yuji IIZUKA

IPC分类号： H01L25/07 ,  H01L23/32 ,  H01L23/492

CPC分类号： H01L25/072 ,  H01L23/32 ,  H01L23/492 ,  H01L24/72 ,  H01L25/115 ,  H01L2224/01 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012

摘要： A pressure contact-type semiconductor module includes a plurality of semiconductor units disposed side-by-side, each of the semiconductor units including: a semiconductor device substrate; a first electrode formed below the semiconductor device substrate, a second electrode formed above the semiconductor device substrate, an electrode plate electrically connected to the second electrode; and a pressure contact adjustment member screwed into the electrode plate, the pressure contact adjustment member having a top surface as a pressure contact-receiving surface to which a lead-out electrode plate that is common to the plurality of semiconductor units is to be pressure-contacted, levels of the respective top surfaces of the pressure contact adjustment members in the plurality of semiconductor units being adjustable to match a reference pressure contact plane so that contact pressures in the respective top surfaces applied by the lead-out electrode plate are substantially the same among the semiconductor units.