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公开(公告)号：US20240290829A1
公开(公告)日：2024-08-29
申请号：US18570670
申请日：2022-04-22
发明人： Haruka SHIMIZU , Takeru SUTO , Yuki MORI
CPC分类号： H01L29/0619 , H01L29/1095 , H01L29/7813
摘要： A semiconductor device includes: a semiconductor substrate having a drift layer of a first conductivity type, a body region of a second conductivity type, and a JFET region of the first conductivity type in contact with the body region on both sides on the drift layer; a plurality of trenches formed in an upper surface of the semiconductor substrate and extending in a first direction; and a gate electrode formed in the trenches and on the upper surface of the semiconductor substrate with an insulating film interposed therebetween. In a unit cell, a first trench group composed of a plurality of trenches lined up in a second direction that is orthogonal to the first direction and a second trench group composed of a plurality of trenches lined up in the second direction are lined up in the first direction, and have a channel region that is shallower than the trenches.
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2.发明公开公开(公告)号：US20240274708A1
公开(公告)日：2024-08-15
申请号：US18566891
申请日：2022-06-27
CPC分类号： H01L29/7805 , H01L23/647 , H01L29/66734 , H01L29/7813
摘要： A MOS control diode obtained by adding a MOS control function to a PN diode, comprises: a semiconductor substrate having a PN junction diode that consists of a conductivity-type drift layer and a conductivity-type anode layer; a first conductivity-type well layer on the anode layer; a second conductivity-type low-concentration source layer on the well layer; a second conductivity-type high-concentration source layer only on a portion of the low-concentration source layer; gate electrodes that are located adjacent to, by way of gate oxide films, the anode layer, the well layer, and the low-concentration source layer, and that constitutes a MOSFET; an insulating film that covers the anode layer, the low-concentration and high-concentration source layers, and the gate electrodes; and a contact hole that penetrates the insulating film, the well layer, and the low-concentration and high-concentration source layers.
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公开(公告)号：US20230402420A1
公开(公告)日：2023-12-14
申请号：US18033543
申请日：2021-10-14
发明人： Osamu Ikeda , Masato Nakamura
IPC分类号： H01L23/00
CPC分类号： H01L24/33 , H01L24/32 , H01L24/29 , H01L24/83 , H01L2224/32245 , H01L2224/33181 , H01L2224/29111 , H01L2224/2912 , H01L2224/29139 , H01L2224/29147 , H01L2224/29155 , H01L2224/29144 , H01L2224/83801
摘要： A semiconductor device comprises: a diode element with a main surface having an electrode and a back surface having another electrode; a heat dissipation base arranged to face the diode element; a Cu lead arranged to face the diode element; a bonding material which bonds the back surface of the diode element and the heat dissipation base to each other; and a bonding material which bonds the main surface of the diode element and the Cu lead to each other. The bonding material provided on the back surface side of the diode element is a lead-free solder having a melting point higher than 260° C. and a thermal expansion coefficient lower than that of a Zn—Al solder; and the bonding material provided on the main surface side of the diode element contains a high-melting-point metal having a melting point higher than 260° C. and a compound of Sn and the high-melting-point metal.
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4.发明申请公开(公告)号：US20220302855A1
公开(公告)日：2022-09-22
申请号：US17578044
申请日：2022-01-18
发明人： Satoshi Iesaka , Kenji Sakurai
IPC分类号： H02M7/5387 , H02M1/08 , H03K17/687 , H03K17/567
摘要： The upper arm drive circuit for controlling the drive of an upper arm switching element of the power conversion device includes: an upper arm gate voltage output wiring connected to a gate of the upper arm switching element; a first upper arm drive circuit reference potential wiring; an upper arm gate voltage reference potential wiring connected to an inverter output of the power conversion device; and a control circuit of upper arm drive circuit reference potential wiring potential for controlling the potential of the first upper arm drive circuit reference potential wiring to a potential lower than a reference potential when a potential of the inverter output is equal to a predefined potential that is lower than the reference potential or lower. The first upper arm drive circuit reference potential wiring is connected to the reference potential via the control circuit of upper arm drive circuit reference potential wiring potential.
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公开(公告)号：US20220199786A1
公开(公告)日：2022-06-23
申请号：US17532741
申请日：2021-11-22
发明人： Shigeo Tokumitsu , Masaki Shiraishi , Yutaka Kato , Tetsuo Oda
摘要： Provided is a highly reliable semiconductor device in which an influence on device characteristics can be reduced while improving a high temperature and high humidity bias resistance of a termination structure (termination region) of a chip by a relatively simple method. The semiconductor device includes an active region disposed on a main surface of a semiconductor substrate, and a termination region disposed on the main surface so as to surround the active region. The termination region includes an interlayer insulating film formed on the main surface of the semiconductor substrate, and an organic protective film formed so as to cover the interlayer insulating film. An insulating film having a thickness of 100 nm or less and containing nitrogen is provided between the interlayer insulating film and the organic protective film.
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公开(公告)号：US11282937B2
公开(公告)日：2022-03-22
申请号：US16976393
申请日：2019-02-01
IPC分类号： H01L29/47 , H01L29/78 , H01L29/868
摘要： The invention provides an inexpensive flywheel diode having a low power loss. A semiconductor substrate side of a gate electrode provided on a surface of an anode electrode side of a semiconductor substrate including silicon is surrounded by a p layer, an n layer, and a p layer via a gate insulating film. The anode electrode is in contact with the p layer with a low resistance, and is also in contact with the n layer or the p layer, and a Schottky diode is formed between the anode electrode and the n layer or the p layer.
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公开(公告)号：US11049965B2
公开(公告)日：2021-06-29
申请号：US16056332
申请日：2018-08-06
摘要： A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.
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公开(公告)号：US20190288082A1
公开(公告)日：2019-09-19
申请号：US16189608
申请日：2018-11-13
发明人： Masakazu SAGAWA , Takashi ISHIGAKI
IPC分类号： H01L29/40 , H01L29/16 , H01L29/06 , H01L29/78 , H01L29/423 , H01L23/522 , H01L29/66
摘要： A semiconductor device including an n-type semiconductor layer formed on a substrate, having a cell region and a gate pad region, and including silicon carbide, and a unit cell formed in the cell region is configured as follows. A p-type body region formed in the semiconductor layer of the gate pad region, a first insulating film formed on the p-type body region, a conductive film formed on the first insulating film, and a second insulating film formed on the conductive film, and a gate pad formed on the second insulating film. Then, the film thickness of the first insulating film is 0.7 μm or more, and more favorably 1.5 μm or more. In addition, the electric field strength of the first insulating film is 3 MV/cm or less. Then, an opening portion is formed on the first insulating film in the gate pad region, and a resistance portion and a connection portion corresponding to the conductive film are formed in the opening portion.
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公开(公告)号：US10205314B2
公开(公告)日：2019-02-12
申请号：US15819315
申请日：2017-11-21
摘要： A rectifier includes a rectification MOSFET that performs rectification, a comparator formed by connecting a drain of the rectification MOSFET to a non-inverting input terminal and a source to an inverting input terminal, and a control circuit that performs an on/off control of the rectification MOSFET using an output of the comparator. The control circuit includes a shut-off MOSFET that disconnects a drain of the rectification MOSFET and a non-inverting input terminal of the comparator from each other, and a shut-off circuit that turns off the shut-off MOSFET to electrically disconnect the drain of the rectification MOSFET and the non-inverting input terminal of the comparator from each other when the drain voltage of the rectification MOSFET is equal to or higher than a predetermined first voltage.
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公开(公告)号：US10079536B2
公开(公告)日：2018-09-18
申请号：US15297565
申请日：2016-10-19
CPC分类号： H02M1/36 , H02K7/006 , H02K11/046 , H02M1/08 , H02M7/217 , H02M7/219 , H03K17/30 , H03K17/302 , H03K2017/307 , H03K2217/0081 , Y02B70/1408
摘要： The rectifier includes a rectification MOSFET; a comparator having the non-inverted input terminal connected to a drain of the rectification MOSFET and the inverted input terminal connected to a source of the rectification MOSFET, and the control circuit controlling ON and OFF of the rectification MOSFET by an output of the comparator. The control circuit includes the shutoff MOSFET for performing shutoff between the drain of the rectification MOSFET and the non-inverted input terminal of the comparator and the shutoff control circuit performing electrical shutoff between the drain of the rectification MOSFET and the non-inverted input terminal of the comparator by turning off the shutoff MOSFET when a voltage of the drain of the rectification MOSFET is equal to or higher than a first predetermined voltage.
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