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公开(公告)号：US11012022B2
公开(公告)日：2021-05-18
申请号：US16618478
申请日：2018-05-28
IPC分类号： H02P27/08 , H02M1/08 , H02M7/5387
摘要： The object of the invention is to provide an inverter device and an electric motor device using the same to shorten a dead time. Thus, an inverter device is provided, which includes: a switching element including a control terminal and a pair of main terminals; a control circuit configured to output a control signal which indicates whether to instruct an ON state of the switching element; a decision circuit configured to output a decision signal which indicates a state of the switching element based on a voltage between the main terminals of the switching element; and a drive circuit configured to control the ON state or an OFF state of the switching element based on the control signal and the decision signal.
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公开(公告)号：US09831145B2
公开(公告)日：2017-11-28
申请号：US15509882
申请日：2015-08-19
发明人： Tetsuya Ishimaru , Mutsuhiro Mori , Shinichi Kurita , Shigeru Sugayama , Junichi Sakano , Kohhei Onda
CPC分类号： H01L23/13 , H01L23/142 , H01L23/3142 , H01L24/01 , H01L25/07 , H01L25/11 , H01L25/16 , H01L25/18 , H01L2224/05554 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected. The source electrode of the MOSFET chip and the second external electrode are connected.
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公开(公告)号：US11049965B2
公开(公告)日：2021-06-29
申请号：US16056332
申请日：2018-08-06
摘要： A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.
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公开(公告)号：US09966871B2
公开(公告)日：2018-05-08
申请号：US15104116
申请日：2014-12-12
发明人： Tetsuya Ishimaru , Kohhei Onda , Junichi Sakano , Mutsuhiro Mori
CPC分类号： H02M7/04 , H02M1/08 , H02M7/219 , H02M2001/0029 , H02M2007/2195 , H03K17/163 , Y02B70/1408
摘要： A rectifier including an autonomous type synchronous-rectification MOSFET is provided, which prevents chattering and through-current caused by a malfunction when a noise is applied. The rectifier includes: a rectification MOSFET for performing synchronous rectification; a determination circuit configured to input a voltage between a pair of main terminals of the rectification MOSFET, and to determine whether the rectification MOSFET is in on or off state on the basis of the inputted voltage; and a gate drive circuit configured such that a gate of the rectification MOSFET is turned on and off by a comparison signal from the determination circuit, and such that a time required to boost a gate voltage when the rectification MOSFET is turned on is longer than a time required to lower the gate voltage when the rectification MOSFET is turned off.
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公开(公告)号：US10319849B2
公开(公告)日：2019-06-11
申请号：US15102771
申请日：2014-12-12
发明人： Tetsuya Ishimaru , Mutsuhiro Mori , Junichi Sakano , Kohhei Onda
IPC分类号： H01L29/78 , H01L23/00 , H01L25/07 , H02K19/36 , H02K11/00 , H02M1/08 , H02M7/00 , H02M7/219 , H02K11/04 , H01L23/31 , H01L23/373 , H02M7/217 , H02P9/00 , H01L23/051 , H01L23/544 , H01L23/367 , H02M1/00
摘要： The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode.
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