Load switch circuit and control method

    公开(公告)号:US11848667B2

    公开(公告)日:2023-12-19

    申请号:US17840489

    申请日:2022-06-14

    Inventor: Song Qin

    Abstract: A load switch circuit includes a power transistor, the first terminal is configured to receive the power supply voltage, and the second terminal is the output terminal of the load switch circuit and is coupled with an external inductive load; a clamping module including at least a mutually coupled clamping unit and a driving unit; the clamping unit, including a voltage-current converter and a first resistor, the first resistor is coupled between the output terminal of the voltage-current converter and the second terminal of the power transistor, the output terminal of the drive unit is coupled to the control terminal of the power transistor when the difference between the power supply voltage and the output voltage of the power transistor is greater than or equal to the preset clamping threshold, and the clamping unit outputs an effective drive control signal to the driving unit.

    SLEW-RATE COMPENSATED TRANSISTOR TURNOFF SYSTEM

    公开(公告)号:US20230261657A1

    公开(公告)日:2023-08-17

    申请号:US18307994

    申请日:2023-04-27

    Abstract: In a transistor turnoff system, a transistor control circuit is configured to adjust a control voltage at a transistor control output responsive to a comparison signal at a control input. The control voltage has a slew rate. A comparator has a comparator output and first and second comparator inputs. The first comparator input is coupled to the transistor control output. The comparator is configured to: provide the comparison signal at the comparator output based on a reference voltage at the second comparator input; and deactivate the transistor control circuit by changing a state of the comparison signal responsive to the control voltage falling below the reference voltage. A slew-rate compensator is configured to increase the reference voltage by a compensation voltage that compensates for a time delay of the comparator or the transistor control circuit. The compensation voltage is proportional to the slew rate.

    METHOD AND DEVICE FOR CONTROLLING MOSFET SWITCHING MODULES

    公开(公告)号:US20190199193A1

    公开(公告)日:2019-06-27

    申请号:US16229733

    申请日:2018-12-21

    Abstract: A method and a device for controlling a commutation process of a load current between two switching modules are disclosed that each have a MOSFET that can be controlled by a gate-source voltage, and an intrinsic-body inverse diode. To reduce oscillations in the down-commutation of the inverse diodes caused by parasitic circuit parameters, after switching off one of the switching modules, the gate-source control voltage applied to this switching module is temporarily switched off until being increased again the vicinity of the threshold voltage for switching on the MOSFET, before and while the other switching module is switched on, in order to commutate the current from the inverse diode of the one switching module to the MOSFET of the other switching module.

    DRIVE CIRCUIT OF TRANSISTOR
    5.
    发明申请

    公开(公告)号:US20180367132A1

    公开(公告)日:2018-12-20

    申请号:US16110147

    申请日:2018-08-23

    Inventor: Ping FU Fei GAO

    Abstract: The present disclosure discloses a drive circuit of a transistor, including: a high-voltage power supply and a low-voltage power supply; a high-voltage power supply domain circuit and a low-voltage power supply domain circuit, where the high-voltage power supply domain circuit is connected to the high-voltage power supply; an electrostatic discharge apparatus; a level shifter circuit, wherein the level shifter circuit includes a level detection circuit, a current limiting module, a discharge module, and a switch transistor, the level detection circuit is connected to a positive electrode of the high-voltage power supply and is separately connected to the current limiting module, the discharge module, and the high-voltage power supply domain circuit, the current limiting module is further connected to a first end of the switch transistor, the discharge module is further connected to a negative electrode of the high-voltage power supply, a control end of the switch transistor is connected to the low-voltage power supply domain circuit and a second end of the switch transistor is connected to a negative electrode of the low-voltage power supply, the current limiting module is configured to limit the discharged electricity when the drive circuit performs electrostatic discharge, and the discharge module is configured to form a discharge assisting path between the negative electrode of the high-voltage power supply and the first end of the switch transistor to assist electrostatic discharge of the drive circuit.

    GATE POTENTIAL CONTROL DEVICE
    8.
    发明申请

    公开(公告)号:US20180269870A1

    公开(公告)日:2018-09-20

    申请号:US15903242

    申请日:2018-02-23

    Abstract: A gate potential control device configured to control potential of a gate of a main switching element is provided herein. The gate potential control device includes: a turn-on switching element and a turn-off switching element. In a turn-off operation, a main voltage between main terminals of the main switching element increases from an on-voltage to a peak value of a surge voltage and then decreases to an off-voltage. The gate potential control device is configured to keep both of the turn-on switching element and the turn-off switching element turned off in a period which is at least a part of a specific period in the turn-off operation, the specific period being from a timing after a predetermined time lapse from a timing of rise-up of the main voltage from the on-voltage to a timing at which the main voltage reaches the peak value.

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