公开(公告)号：US20190288082A1

公开(公告)日：2019-09-19

申请号：US16189608

申请日：2018-11-13

申请人： HITACHI POWER SEMICONDUCTOR DEVICE, LTD.

发明人： Masakazu SAGAWA ,  Takashi ISHIGAKI

IPC分类号： H01L29/40 ,  H01L29/16 ,  H01L29/06 ,  H01L29/78 ,  H01L29/423 ,  H01L23/522 ,  H01L29/66

摘要： A semiconductor device including an n-type semiconductor layer formed on a substrate, having a cell region and a gate pad region, and including silicon carbide, and a unit cell formed in the cell region is configured as follows. A p-type body region formed in the semiconductor layer of the gate pad region, a first insulating film formed on the p-type body region, a conductive film formed on the first insulating film, and a second insulating film formed on the conductive film, and a gate pad formed on the second insulating film. Then, the film thickness of the first insulating film is 0.7 μm or more, and more favorably 1.5 μm or more. In addition, the electric field strength of the first insulating film is 3 MV/cm or less. Then, an opening portion is formed on the first insulating film in the gate pad region, and a resistance portion and a connection portion corresponding to the conductive film are formed in the opening portion.

公开(公告)号：US20190157412A1

公开(公告)日：2019-05-23

申请号：US16153251

申请日：2018-10-05

申请人： HITACHI POWER SEMICONDUCTOR DEVICE, LTD.

发明人： Masakazu SAGAWA ,  Takahiro MORIKAWA ,  Motoyuki MIYATA ,  Kan YASUI ,  Toshiaki MORITA

IPC分类号： H01L29/45 ,  H01L29/16 ,  H01L23/00 ,  H01L23/495

摘要： A semiconductor chip includes a semiconductor substrate made of SiC, a front surface electrode formed in a principal surface of the semiconductor substrate, and a rear surface electrode (drain electrode) formed in a rear surface of the semiconductor substrate. The front surface electrode is bonded to a wire, and includes an Al alloy film containing a high melting-point metal. The Al alloy film contains a columnar Al crystal which extends along a thickness direction of the Al alloy film, and an intermetallic compound is precipitated therein.