-
1.发明申请Semiconductor Device, and Alternator and Power Conversion Device Which Use Same 审中-公开半导体装置以及使用相同的发电机和电力转换装置公开(公告)号：US20160315184A1
公开(公告)日：2016-10-27
申请号：US15102771
申请日：2014-12-12
发明人： Tetsuya ISHIMARU , Mutsuhiro MORI , Junichi SAKANO , Kohhei ONDA
IPC分类号： H01L29/78 , H01L23/31 , H02M7/00 , H02K19/36 , H02P9/00 , H02M7/217 , H01L23/373 , H02K11/04
CPC分类号： H01L29/7808 , H01L23/051 , H01L23/3107 , H01L23/3114 , H01L23/3135 , H01L23/3142 , H01L23/367 , H01L23/373 , H01L23/544 , H01L24/01 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/66 , H01L24/69 , H01L24/73 , H01L24/75 , H01L24/78 , H01L24/83 , H01L24/84 , H01L24/85 , H01L24/92 , H01L25/16 , H01L29/7805 , H01L2223/5442 , H01L2223/54426 , H01L2223/54486 , H01L2224/04042 , H01L2224/05554 , H01L2224/0603 , H01L2224/291 , H01L2224/32245 , H01L2224/33181 , H01L2224/37012 , H01L2224/37147 , H01L2224/40137 , H01L2224/40499 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48499 , H01L2224/49175 , H01L2224/73221 , H01L2224/73265 , H01L2224/75754 , H01L2224/78753 , H01L2224/78802 , H01L2224/83101 , H01L2224/83801 , H01L2224/84801 , H01L2224/9221 , H01L2924/00011 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H02K11/00 , H02K11/046 , H02K19/36 , H02M1/08 , H02M7/003 , H02M7/217 , H02M7/219 , H02M2001/0006 , H02P9/00 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2924/01005 , H01L2924/01033 , H01L2924/014 , H01L2224/83 , H01L2224/84
摘要： The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode.
摘要翻译： 半导体器件具有第一外部电极，该第一外部电极具有外部周边部分，其在俯视图中具有圆形形状并且将附接到交流发电机。 在第一个外部电极上安装：一个MOSFET芯片; 输入在MOSFET芯片的第一主端子和第二主端子之间流动的电流或电流的控制电路，其根据电压或电流产生施加到MOSFET芯片的栅极的控制信号 MOSFET芯片; 以及用于向控制电路提供电源的电容器。 半导体器件还具有相对于MOSFET芯片与第一外部电极相对设置的第二外部电极。 在MOSFET芯片的第一主端子和第一外部电极之间以及MOSFET芯片的第二主端子和第二外部电极之间形成电连接。
-
公开(公告)号：US20160315553A1
公开(公告)日：2016-10-27
申请号：US15104116
申请日：2014-12-12
发明人： Tetsuya ISHIMARU , Kohhei ONDA , Junichi SAKANO , Mutsuhiro MORI
CPC分类号： H02M7/04 , H02M1/08 , H02M7/219 , H02M2001/0029 , H02M2007/2195 , H03K17/163 , Y02B70/1408
摘要： A rectifier including an autonomous type synchronous-rectification MOSFET is provided, which prevents chattering and through-current caused by a malfunction when a noise is applied. The rectifier includes: a rectification MOSFET for performing synchronous rectification; a determination circuit configured to input a voltage between a pair of main terminals of the rectification MOSFET, and to determine whether the rectification MOSFET is in on or off state on the basis of the inputted voltage; and a gate drive circuit configured such that a gate of the rectification MOSFET is turned on and off by a comparison signal from the determination circuit, and such that a time required to boost a gate voltage when the rectification MOSFET is turned on is longer than a time required to lower the gate voltage when the rectification MOSFET is turned off.
摘要翻译： 提供了包括自主型同步整流MOSFET的整流器，其在施加噪声时防止由故障引起的颤动和通电。 整流器包括：用于执行同步整流的整流MOSFET; 确定电路，被配置为输入整流MOSFET的一对主端子之间的电压，并且基于所输入的电压来确定整流MOSFET是否处于导通或截止状态; 以及栅极驱动电路，其被配置为使得通过来自所述确定电路的比较信号使所述整流MOSFET的栅极导通和截止，并且使得当所述整流MOSFET导通时提高栅极电压所需的时间长于 整流MOSFET关断时降低栅极电压所需的时间。
-
公开(公告)号：US20200186076A1
公开(公告)日：2020-06-11
申请号：US16618478
申请日：2018-05-28
IPC分类号： H02P27/08 , H02M7/5387 , H02M1/08
摘要： The object of the invention is to provide an inverter device and an electric motor device using the same to shorten a dead time. Thus, an inverter device is provided, which includes: a switching element including a control terminal and a pair of main terminals; a control circuit configured to output a control signal which indicates whether to instruct an ON state of the switching element; a decision circuit configured to output a decision signal which indicates a state of the switching element based on a voltage between the main terminals of the switching element; and a drive circuit configured to control the ON state or an OFF state of the switching element based on the control signal and the decision signal.
-
公开(公告)号：US20160099658A1
公开(公告)日：2016-04-07
申请号：US14870605
申请日：2015-09-30
CPC分类号： H02M7/219 , H02M2007/2195 , Y02B70/1408
摘要： A rectifier 107 includes a rectifying MOSFET 101 that performs synchronous rectification, a control circuit 106 that inputs a voltage across a pair of a positive-side main terminal TK and a negative-side main terminal TA of the rectifying MOSFET 101 to determine an ON or OFF state of the rectifying MOSFET 101 based on the inputted voltage, and a capacitor 104 that supplies power to the control circuit 106. The control circuit 106 includes a blocking circuit 105 that inputs the voltage across the pair of main terminals of the rectifying MOSFET 101, to block power supply to the control circuit 106 when the inputted voltage across the pair of main terminals is higher than or equal to a first voltage, and to unblock power supply to the control circuit 106 when the inputted voltage across the pair of main terminals is lower than the first voltage.
摘要翻译： 整流器107包括执行同步整流的整流MOSFET 101，输入一对正极侧主端子TK和整流MOSFET 101的负侧主端子TA的电压的控制电路106，以确定ON或 基于输入电压的整流用MOSFET 101的截止状态以及向控制电路106供电的电容器104.控制电路106包括：阻塞电路105，其输入整流用MOSFET101的一对主端子的电压 当两对主端子上的输入电压高于或等于第一电压时，阻断对控制电路106的供电，并且当跨越一对主端子的输入电压时，阻止向控制电路106供电 低于第一电压。
-
公开(公告)号：US20170317075A1
公开(公告)日：2017-11-02
申请号：US15495008
申请日：2017-04-24
发明人： Taiga ARAI , Masatoshi WAKAGI , Tetsuya ISHIMARU , Mutsuhiro MORI
IPC分类号： H01L27/08 , H02M7/537 , H02M1/084 , H01L29/861 , H01L29/417 , H02P27/06 , H01L29/36
CPC分类号： H01L27/0814 , H01L29/32 , H01L29/36 , H01L29/41716 , H01L29/66136 , H01L29/861 , H02M1/084 , H02M7/537 , H02P27/06
摘要： A diode includes an anode electrode layer; a cathode electrode layer; a buffer layer of a first conductivity type formed between the anode electrode layer and the cathode electrode layer in a region extending to a location at a distance of 30 μm or more from the cathode electrode layer; a first semiconductor layer of the first conductivity type formed in a region between the anode electrode layer and the cathode electrode layer, and being in contact with the buffer layer of the first conductivity type; and a second semiconductor layer of a second conductivity type formed in a region between the anode electrode layer and the first semiconductor layer of the first conductivity type. The carrier concentration in the first semiconductor layer is lower than the carrier concentration in the buffer layer. The carrier concentration in the buffer layer is less than 1×1015 cm−3.
-
公开(公告)号：US20170141018A1
公开(公告)日：2017-05-18
申请号：US15354474
申请日：2016-11-17
IPC分类号： H01L23/495 , H02K11/04 , H01L23/31
CPC分类号： H01L23/49568 , H01L23/051 , H01L23/3114 , H01L23/3135 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49589 , H01L2224/01 , H01L2224/73265 , H02K11/046
摘要： Provided are a semiconductor device realized easily at low cost without requiring a complicated manufacturing process, and an alternator using the same. The semiconductor device includes a base having a base seat, a lead having a lead header, and an electronic circuit body, wherein the electronic circuit body is arranged between the base and the lead; the base seat is connected to a first surface of the electronic circuit body; the lead header is connected to a second surface of the electronic circuit body; the electronic circuit body is integrally covered by resin, including a transistor circuit chip having a switching element, a control circuit chip for controlling the switching element, a drain frame, and a source frame; either one of the drain frame and the source frame, and the base are connected; and the other one of the drain frame and the source frame, and the lead are connected.
-
公开(公告)号：US20190043984A1
公开(公告)日：2019-02-07
申请号：US16056332
申请日：2018-08-06
摘要： A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.
-
公开(公告)号：US20170263516A1
公开(公告)日：2017-09-14
申请号：US15509882
申请日：2015-08-19
发明人： Tetsuya ISHIMARU , Mutsuhiro MORI , Shinichi KURITA , Shigeru SUGAYAMA , Junichi SAKANO , Kohhei ONDA
CPC分类号： H01L23/13 , H01L23/142 , H01L23/3142 , H01L24/01 , H01L25/07 , H01L25/11 , H01L25/16 , H01L25/18 , H01L2224/05554 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected. The source electrode of the MOSFET chip and the second external electrode are connected.
-
公开(公告)号：US20170110959A1
公开(公告)日：2017-04-20
申请号：US15297565
申请日：2016-10-19
CPC分类号： H02M1/36 , H02K7/006 , H02K11/046 , H02M1/08 , H02M7/217 , H02M7/219 , H03K17/30 , H03K17/302 , H03K2017/307 , H03K2217/0081
摘要： The rectifier includes a rectification MOSFET; a comparator having the non-inverted input terminal connected to a drain of the rectification MOSFET and the inverted input terminal connected to a source of the rectification MOSFET, and the control circuit controlling ON and OFF of the rectification MOSFET by an output of the comparator. The control circuit includes the shutoff MOSFET for performing shutoff between the drain of the rectification MOSFET and the non-inverted input terminal of the comparator and the shutoff control circuit performing electrical shutoff between the drain of the rectification MOSFET and the non-inverted input terminal of the comparator by turning off the shutoff MOSFET when a voltage of the drain of the rectification MOSFET is equal to or higher than a first predetermined voltage.
-
-
-
-
-
-
-
-
搜索结果
9 条记录 (耗时 0.019 秒)
