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公开(公告)号：US20160099658A1
公开(公告)日：2016-04-07
申请号：US14870605
申请日：2015-09-30
CPC分类号： H02M7/219 , H02M2007/2195 , Y02B70/1408
摘要： A rectifier 107 includes a rectifying MOSFET 101 that performs synchronous rectification, a control circuit 106 that inputs a voltage across a pair of a positive-side main terminal TK and a negative-side main terminal TA of the rectifying MOSFET 101 to determine an ON or OFF state of the rectifying MOSFET 101 based on the inputted voltage, and a capacitor 104 that supplies power to the control circuit 106. The control circuit 106 includes a blocking circuit 105 that inputs the voltage across the pair of main terminals of the rectifying MOSFET 101, to block power supply to the control circuit 106 when the inputted voltage across the pair of main terminals is higher than or equal to a first voltage, and to unblock power supply to the control circuit 106 when the inputted voltage across the pair of main terminals is lower than the first voltage.
摘要翻译： 整流器107包括执行同步整流的整流MOSFET 101，输入一对正极侧主端子TK和整流MOSFET 101的负侧主端子TA的电压的控制电路106，以确定ON或 基于输入电压的整流用MOSFET 101的截止状态以及向控制电路106供电的电容器104.控制电路106包括：阻塞电路105，其输入整流用MOSFET101的一对主端子的电压 当两对主端子上的输入电压高于或等于第一电压时，阻断对控制电路106的供电，并且当跨越一对主端子的输入电压时，阻止向控制电路106供电 低于第一电压。
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公开(公告)号：US20170263516A1
公开(公告)日：2017-09-14
申请号：US15509882
申请日：2015-08-19
发明人： Tetsuya ISHIMARU , Mutsuhiro MORI , Shinichi KURITA , Shigeru SUGAYAMA , Junichi SAKANO , Kohhei ONDA
CPC分类号： H01L23/13 , H01L23/142 , H01L23/3142 , H01L24/01 , H01L25/07 , H01L25/11 , H01L25/16 , H01L25/18 , H01L2224/05554 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected. The source electrode of the MOSFET chip and the second external electrode are connected.
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