公开(公告)号：US20240055423A1

公开(公告)日：2024-02-15

申请号：US17766613

申请日：2020-10-06

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： Masaki SHIRAISHI ,  Junichi SAKANO

IPC分类号： H01L27/02 ,  H01L23/00 ,  H01L25/16 ,  H01L23/31 ,  H01L27/07

CPC分类号： H01L27/0211 ,  H01L24/48 ,  H01L24/32 ,  H01L25/165 ,  H01L23/3135 ,  H01L27/0727 ,  H01L2924/19041 ,  H01L2924/13091 ,  H01L2224/48245 ,  H01L2224/48137 ,  H01L2224/32245

摘要： A semiconductor device that is equipped with a MOSFET with a Zener diode embedded and capable of achieving both improvement in the surge resistance and the low on-resistance of the MOSFET is provided. The semiconductor device equipped with a MOSFET with a Zener diode embedded includes an active region in which the MOSFET operates, and a peripheral region that is disposed outside of the active region and holds a withstand voltage of a chip peripheral portion, in which the active region includes a first region including a chip central portion and a second region disposed outside of the first region, and a withstand voltage of the first region is lower than a withstand voltage of the second region and a withstand voltage of the peripheral region.

公开(公告)号：US20210057537A1

公开(公告)日：2021-02-25

申请号：US16976393

申请日：2019-02-01

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： Mutsuhiro MORI ,  Tomoyuki MIYOSHI ,  Tomoyasu FURUKAWA ,  Masaki SHIRAISHI

IPC分类号： H01L29/47 ,  H01L29/868 ,  H01L29/78

摘要： The invention provides an inexpensive flywheel diode having a low power loss. A semiconductor substrate side of a gate electrode provided on a surface of an anode electrode side of a semiconductor substrate including silicon is surrounded by a p layer, an n layer, and a p layer via a gate insulating film. The anode electrode is in contact with the p layer with a low resistance, and is also in contact with the n layer or the p layer, and a Schottky diode is formed between the anode electrode and the n layer or the p layer.

公开(公告)号：US20210091217A1

公开(公告)日：2021-03-25

申请号：US16971547

申请日：2019-02-01

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： Tomoyuki MIYOSHI ,  Mutsuhiro MORI ,  Tomoyasu FURUKAWA ,  Yujiro TAKEUCHI ,  Masaki SHIRAISHI

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L25/16

摘要： A current switching semiconductor device to be used in a power conversion device achieves both a low conduction loss and a low switching loss. The semiconductor device includes the IGBT in which only Gc gates are provided and an impurity concentration of the p type collector layer is high, and the IGBT in which the Gs gates and the Gc gates are provided and an impurity concentration of the p type collector layer is low. When the semiconductor device is turned off, the semiconductor device transitions from a state in which a voltage lower than a threshold voltage is applied to both the Gs gates and the Gc gates to a state in which a voltage equal to or higher than the threshold voltage is applied to the Gc gates prior to the Gs gates.

公开(公告)号：US20200006301A1

公开(公告)日：2020-01-02

申请号：US16465429

申请日：2017-12-25

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： Tomoyasu FURUKAWA ,  Masaki SHIRAISHI ,  Toshiaki MORITA

IPC分类号： H01L25/11 ,  H01L23/15 ,  H01L29/861 ,  H01L29/739 ,  H01L23/522 ,  H01L29/417 ,  H01L29/45 ,  H02M7/5387 ,  H02M7/00

摘要： Provided is a semiconductor device in which, in a case where a metallic plate (a conductive member) is bonded by being sintered to a semiconductor chip having an IGBT gate structure, an excess stress is less likely to be generated in a gate wiring section of the semiconductor chip even when pressure is applied in a sinter bonding process, so that a characteristic failure is reduced. The semiconductor device according to the present invention is characterized by: being provided with a semiconductor chip having a gate structure represented by an IGBT; including first gate wiring and second gate wiring formed on the surface of the semiconductor chip; and including an emitter electrode disposed so as to cover the first gate wiring and a sintered layer disposed above the emitter electrode, wherein a multilayer structure formed by including at least the emitter electrode and the sintered layer on the surface of the semiconductor chip continuously exists over a range including an emitter electrode connecting contact and gate wiring regions.

公开(公告)号：US20190043984A1

公开(公告)日：2019-02-07

申请号：US16056332

申请日：2018-08-06

申请人： HITACHI POWER SEMICONDUCTOR DEVICE, LTD.

发明人： Masaki SHIRAISHI ,  Tetsuya ISHIMARU ,  Junichi SAKANO ,  Mutsuhiro MORI ,  Shinichi KURITA

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/66

摘要： A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.

公开(公告)号：US20240355888A1

公开(公告)日：2024-10-24

申请号：US18683523

申请日：2022-11-11

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： Masaki SHIRAISHI ,  Daisuke KAWASE ,  Tetsuo ODA ,  Tomoyasu FURUKAWA ,  Yutaka KATO ,  Tsubasa MORITSUKA

IPC分类号： H01L29/40 ,  H01L29/06 ,  H02M7/5387

CPC分类号： H01L29/402 ,  H01L29/0623 ,  H02M7/5387

摘要： The present invention provides: a semiconductor device which has higher resistance to bias at high temperatures and high humidities than ever before, while achieving good connection between a field limiting layer and a field plate; and a power conversion device which uses this semiconductor device. A semiconductor device according to the present invention is characterized by comprising a floating field limiting layer that is provided in a termination region and a field plate that is electrically connected to the field limiting layer, and is also characterized in that: the field plate is formed of a polysilicon; the field plate and the field limiting layer are connected to each other via an Al electrode; and the connection between the field limiting layer and the Al electrode and the connection between the field plate and the Al electrode are established at different contacts.

公开(公告)号：US20160254761A1

公开(公告)日：2016-09-01

申请号：US15051822

申请日：2016-02-24

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： Tomoyasu FURUKAWA ,  Masaki SHIRAISHI ,  Hiroshi NAKANO ,  Toshiaki MORITA

IPC分类号： H02M7/537 ,  H01L25/00 ,  H01L21/78 ,  H01L29/45 ,  H01L21/283 ,  H01L25/16 ,  H01L23/00

CPC分类号： H02M7/537 ,  H01L21/283 ,  H01L21/78 ,  H01L23/4827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/50 ,  H01L29/45 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/039 ,  H01L2224/03901 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13387 ,  H01L2224/1403 ,  H01L2224/14131 ,  H01L2224/14135 ,  H01L2224/14154 ,  H01L2224/14177 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/29147 ,  H01L2224/29387 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/81447 ,  H01L2224/8184 ,  H01L2224/83065 ,  H01L2224/83203 ,  H01L2224/83447 ,  H01L2224/8384 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/01013 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/3511 ,  H02M7/003 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2224/03 ,  H01L2924/0541 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2224/1413 ,  H01L2224/1415 ,  H01L2224/03464 ,  H01L21/304 ,  H01L21/22

摘要： A semiconductor device includes a semiconductor substrate in which a semiconductor element is formed, an electrode structure of a first semiconductor chip which is provided on a first surface of an n+-type semiconductor layer of the semiconductor substrate to be electrically connected to the semiconductor element and in which a first Al metal layer composed of Al or Al alloy, a Cu diffusion-prevention layer, a second Al metal layer composed of Al or Al alloy, and a Ni layer are formed in this order, and a conductive member which is bonded to the electrode structure of the first semiconductor chip via a sintered copper layer disposed on a surface of the Ni layer. In this semiconductor device, a crystal plane orientation of Al crystal grains on a surface of the second Al metal layer is principally on (110) plane.

摘要翻译： 半导体器件包括其半导体元件形成的半导体衬底，第一半导体芯片的电极结构，其设置在半导体衬底的n +型半导体层的第一表面上以与半导体元件电连接，并且 其中依次形成由Al或Al合金构成的第一Al金属层，Cu扩散防止层，由Al或Al合金构成的第二Al金属层和Ni层，以及导电构件 通过设置在Ni层的表面上的烧结铜层与第一半导体芯片的电极结构。 在该半导体器件中，第二Al金属层的表面上的Al晶粒的晶面取向主要在（110）面上。