公开(公告)号：US20210091217A1

公开(公告)日：2021-03-25

申请号：US16971547

申请日：2019-02-01

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： Tomoyuki MIYOSHI ,  Mutsuhiro MORI ,  Tomoyasu FURUKAWA ,  Yujiro TAKEUCHI ,  Masaki SHIRAISHI

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L25/16

摘要： A current switching semiconductor device to be used in a power conversion device achieves both a low conduction loss and a low switching loss. The semiconductor device includes the IGBT in which only Gc gates are provided and an impurity concentration of the p type collector layer is high, and the IGBT in which the Gs gates and the Gc gates are provided and an impurity concentration of the p type collector layer is low. When the semiconductor device is turned off, the semiconductor device transitions from a state in which a voltage lower than a threshold voltage is applied to both the Gs gates and the Gc gates to a state in which a voltage equal to or higher than the threshold voltage is applied to the Gc gates prior to the Gs gates.

公开(公告)号：US20180301549A1

公开(公告)日：2018-10-18

申请号：US15767310

申请日：2016-10-17

申请人： HITACHI POWER SEMICONDUCTOR DEVICE, LTD.

发明人： Yujiro TAKEUCHI ,  Mutsuhiro MORI

IPC分类号： H01L29/739 ,  H01L29/872 ,  H01L29/16 ,  H01L29/10 ,  H03K17/16 ,  H02M7/5387

CPC分类号： H01L29/7397 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/739 ,  H01L29/78 ,  H01L29/872 ,  H02M1/08 ,  H02M7/48 ,  H02M7/5387 ,  H02M7/53875 ,  H02M2001/0048 ,  H02P27/06 ,  H03K17/08128 ,  H03K17/08148 ,  H03K17/163 ,  H03K17/168 ,  Y02B70/1483 ,  Y02B70/1491

摘要： An electric power converter (100) which is provided with a switching element (101) and a rectifying element (102) that is connected in series to the switching element (101). This electric power converter (100) has a configuration wherein an external electrical load (103) is connected to the connection point of the switching element (101) and the rectifying element (102). The switching element (101) is composed of an insulating gate type semiconductor element that has a first gate terminal (105) and a second gate terminal (106). The rectifying element (102) is composed of a diode that has a Schottky junction which uses silicon carbide as a semiconductor base. Different driving signals are applied to the first gate terminal (105) and the second gate terminal (106), respectively.