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    SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR CHIP CONNECTED IN A FLIP CHIP MANNER
    7.
    发明申请
    SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR CHIP CONNECTED IN A FLIP CHIP MANNER 有权

    公开(公告)号：US20220285305A1

    公开(公告)日：2022-09-08

    申请号：US17752835

    申请日：2022-05-24

    申请人： ROHM CO., LTD.

    发明人： Kazumasa TANIDA ,  Osamu MIYATA

    IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/56 ,  H01L23/52

    摘要： A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.

    SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR CHIP CONNECTED IN A FLIP CHIP MANNER
    9.
    发明申请
    SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR CHIP CONNECTED IN A FLIP CHIP MANNER 审中-公开

    公开(公告)号：US20200105699A1

    公开(公告)日：2020-04-02

    申请号：US16703266

    申请日：2019-12-04

    申请人： ROHM CO., LTD.

    发明人： Kazumasa TANIDA ,  Osamu MIYATA

    IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/56 ,  H01L23/52

    摘要： A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.

    SEMICONDUCTOR DEVICE WITH FRONT AND BACK SIDE RESIN LAYERS HAVING DIFFERENT THERMAL EXPANSION COEFFICIENT AND ELASTICITY MODULUS
    10.
    发明申请
    SEMICONDUCTOR DEVICE WITH FRONT AND BACK SIDE RESIN LAYERS HAVING DIFFERENT THERMAL EXPANSION COEFFICIENT AND ELASTICITY MODULUS 有权
    具有不同热膨胀系数和弹性模量的前侧和后侧树脂层的半导体器件

    公开(公告)号：US20140070413A1

    公开(公告)日：2014-03-13

    申请号：US14083492

    申请日：2013-11-19

    申请人： ROHM CO., LTD.

    发明人： Masaki KASAI ,  Osamu MIYATA

    IPC分类号： H01L23/498

    CPC分类号： H01L23/49816 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/3735 ,  H01L23/544 ,  H01L2223/54406 ,  H01L2223/5448 ,  H01L2224/16 ,  H01L2924/01004

    摘要： Disclosed are a semiconductor device wherein warping of a semiconductor chip due to a sudden temperature change can be prevented without increasing the thickness, and a semiconductor device assembly. The semiconductor device comprises a semiconductor chip, a front side resin layer formed on the front surface of the semiconductor chip by using a first resin material, and a back side resin layer formed on the back surface of the semiconductor chip by using a second resin material having a higher thermal expansion coefficient than the first resin material. The back side resin layer is formed thinner than the front side resin layer.

    摘要翻译： 公开了一种半导体器件，其中可以在不增加厚度的情况下防止由于突然的温度变化引起的半导体芯片翘曲和半导体器件组件。 半导体器件包括半导体芯片，通过使用第一树脂材料形成在半导体芯片的前表面上的前侧树脂层和通过使用第二树脂材料形成在半导体芯片的背面上的背面树脂层 具有比第一树脂材料更高的热膨胀系数。 后侧树脂层比前侧树脂层薄。