- 专利标题： SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
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申请号： US18164153申请日： 2023-02-03
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公开(公告)号： US20230187275A1公开(公告)日： 2023-06-15
- 发明人: Katsuhiko HOTTA , Kyoko SASAHARA
- 申请人： RENESAS ELECTRONICS CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP 05197938 2005.07.06
- 分案原申请号： US12031046 2008.02.14
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/8238 ; H01L23/525 ; H01L23/532 ; H01L23/00 ; H01L23/522 ; H01L23/528 ; H01L21/8234
摘要：
For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.
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