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公开(公告)号：US20200211897A1
公开(公告)日：2020-07-02
申请号：US16817544
申请日：2020-03-12
发明人： Katsuhiko HOTTA , Kyoko SASAHARA
IPC分类号： H01L21/768 , H01L21/8234 , H01L23/532 , H01L23/528 , H01L23/522 , H01L23/00 , H01L23/525 , H01L21/8238
摘要： For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.
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公开(公告)号：US20170271259A1
公开(公告)日：2017-09-21
申请号：US15616899
申请日：2017-06-07
发明人： Katsuhiko HOTTA , Kyoko SASAHARA
IPC分类号： H01L23/522 , H01L23/532 , H01L21/8238 , H01L23/528 , H01L23/00 , H01L21/768 , H01L23/525
CPC分类号： H01L23/5226 , H01L21/76808 , H01L21/76832 , H01L21/76834 , H01L21/76841 , H01L21/76895 , H01L21/823871 , H01L23/5258 , H01L23/528 , H01L23/5283 , H01L23/53209 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L24/11 , H01L2224/13099 , H01L2924/00 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/12042 , H01L2924/1306 , H01L2924/14 , H01L2924/19043 , H01L2924/30105
摘要： For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.
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公开(公告)号：US20230187275A1
公开(公告)日：2023-06-15
申请号：US18164153
申请日：2023-02-03
发明人： Katsuhiko HOTTA , Kyoko SASAHARA
IPC分类号： H01L21/768 , H01L21/8238 , H01L23/525 , H01L23/532 , H01L23/00 , H01L23/522 , H01L23/528 , H01L21/8234
CPC分类号： H01L21/76832 , H01L21/76808 , H01L21/76811 , H01L21/76834 , H01L21/76841 , H01L21/76895 , H01L21/823475 , H01L21/823871 , H01L23/528 , H01L23/5226 , H01L23/5258 , H01L23/5283 , H01L23/5329 , H01L23/53209 , H01L23/53238 , H01L23/53295 , H01L24/11 , H01L2224/13099 , H01L2924/00 , H01L2924/014 , H01L2924/14 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1306 , H01L2924/04941 , H01L2924/04953 , H01L2924/12042 , H01L2924/19043 , H01L2924/30105
摘要： For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.
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公开(公告)号：US20190088537A1
公开(公告)日：2019-03-21
申请号：US16169796
申请日：2018-10-24
发明人： Katsuhiko HOTTA , Kyoko SASAHARA
IPC分类号： H01L21/768 , H01L21/8234 , H01L23/528 , H01L23/522 , H01L23/532
CPC分类号： H01L21/76832 , H01L21/76808 , H01L21/76811 , H01L21/76834 , H01L21/76841 , H01L21/76895 , H01L21/823475 , H01L21/823871 , H01L23/5226 , H01L23/5258 , H01L23/528 , H01L23/5283 , H01L23/53209 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L24/11 , H01L2224/13099 , H01L2924/00 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/12042 , H01L2924/1306 , H01L2924/14 , H01L2924/19043 , H01L2924/30105
摘要： For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.
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公开(公告)号：US20160293542A1
公开(公告)日：2016-10-06
申请号：US15181995
申请日：2016-06-14
发明人： Katsuhiko HOTTA , Kyoko SASAHARA
IPC分类号： H01L23/522 , H01L23/532 , H01L23/528
CPC分类号： H01L23/5226 , H01L21/76808 , H01L21/76832 , H01L21/76834 , H01L21/76841 , H01L21/76895 , H01L21/823871 , H01L23/5258 , H01L23/528 , H01L23/5283 , H01L23/53209 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L24/11 , H01L2224/13099 , H01L2924/00 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/12042 , H01L2924/1306 , H01L2924/14 , H01L2924/19043 , H01L2924/30105
摘要： For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.
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公开(公告)号：US20210296165A1
公开(公告)日：2021-09-23
申请号：US17343448
申请日：2021-06-09
发明人： Katsuhiko HOTTA , Kyoko SASAHARA
IPC分类号： H01L21/768 , H01L21/8238 , H01L23/525 , H01L23/532 , H01L23/00 , H01L23/522 , H01L23/528 , H01L21/8234
摘要： For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.
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公开(公告)号：US20150228579A1
公开(公告)日：2015-08-13
申请号：US14696365
申请日：2015-04-24
发明人： Katsuhiko HOTTA , Kyoko SASAHARA
IPC分类号： H01L23/528 , H01L23/522
CPC分类号： H01L23/5226 , H01L21/76808 , H01L21/76832 , H01L21/76834 , H01L21/76841 , H01L21/76895 , H01L21/823871 , H01L23/5258 , H01L23/528 , H01L23/5283 , H01L23/53209 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L24/11 , H01L2224/13099 , H01L2924/00 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/12042 , H01L2924/1306 , H01L2924/14 , H01L2924/19043 , H01L2924/30105
摘要： For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.
摘要翻译： 为了简化多层Cu互连的双镶嵌形成步骤，省略了在光致抗蚀剂膜下方的抗反射膜的形成步骤。 具体地说，用形成在其上的光致抗蚀剂膜作为掩模，干蚀刻层间绝缘膜，并且通过在形成在层间绝缘膜中的阻挡膜的表面处终止蚀刻来形成互连沟槽。 阻挡膜由具有低光反射率的SiCN膜制成，从而当曝光光致抗蚀剂膜时，其用作防反射膜。
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公开(公告)号：US20140199831A1
公开(公告)日：2014-07-17
申请号：US14214975
申请日：2014-03-16
发明人： Katsuhiko HOTTA , Kyoko SASAHARA
IPC分类号： H01L21/768
CPC分类号： H01L21/76832 , H01L21/76808 , H01L21/76811 , H01L21/76834 , H01L21/76841 , H01L21/76895 , H01L21/823475 , H01L21/823871 , H01L23/5226 , H01L23/5258 , H01L23/528 , H01L23/5283 , H01L23/53209 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L24/11 , H01L2224/13099 , H01L2924/00 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/12042 , H01L2924/1306 , H01L2924/14 , H01L2924/19043 , H01L2924/30105
摘要： For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.
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公开(公告)号：US20140038409A1
公开(公告)日：2014-02-06
申请号：US14042938
申请日：2013-10-01
发明人： Katsuhiko HOTTA , Kyoko SASAHARA
IPC分类号： H01L21/768
CPC分类号： H01L23/5226 , H01L21/76808 , H01L21/76832 , H01L21/76834 , H01L21/76841 , H01L21/76895 , H01L21/823871 , H01L23/5258 , H01L23/528 , H01L23/5283 , H01L23/53209 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L24/11 , H01L2224/13099 , H01L2924/00 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/12042 , H01L2924/1306 , H01L2924/14 , H01L2924/19043 , H01L2924/30105
摘要： For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.
摘要翻译： 为了简化多层Cu互连的双镶嵌形成步骤，省略了在光致抗蚀剂膜下方的抗反射膜的形成步骤。 具体地说，用形成在其上的光致抗蚀剂膜作为掩模，干蚀刻层间绝缘膜，并且通过在形成在层间绝缘膜中的阻挡膜的表面处终止蚀刻来形成互连沟槽。 阻挡膜由具有低光反射率的SiCN膜制成，从而当曝光光致抗蚀剂膜时，其用作防反射膜。
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