发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US14042938申请日： 2013-10-01
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公开(公告)号： US20140038409A1公开(公告)日： 2014-02-06
- 发明人: Katsuhiko HOTTA , Kyoko SASAHARA
- 申请人： Renesas Electronics Corporation
- 申请人地址： JP Kawasaki-shi
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 优先权： JP2005-197938 20050706
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.
公开/授权文献
- US08704373B2 Semiconductor device and a method of manufacturing the same 公开/授权日：2014-04-22
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