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公开(公告)号：US20190221509A1
公开(公告)日：2019-07-18
申请号：US16359485
申请日：2019-03-20
发明人： Eiji HAYASHI , Kyo GO , Kozo HARADA , Shinji BABA
IPC分类号： H01L23/498 , H01L23/373 , H01L23/31 , H01L23/00 , H05K3/46 , H01L23/36 , H01L21/683 , H01L21/56 , H01L21/48
摘要： Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
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公开(公告)号：US20190268425A1
公开(公告)日：2019-08-29
申请号：US16281878
申请日：2019-02-21
发明人： Wataru KURIHARA , Takehiro MIKAMI
摘要： There is a need to acquire more reliable profile information without relying on only the personal subjective judgment on the profile information. Profile information about a dweller is automatically extracted by evaluating and comprehensively determining each of feature amounts concerning the dweller from sensing data acquired from a sensor or a usage log concerning an equipment instrument in a living space based on a criterion for the feature amounts predetermined for a profile item. The reliability of the self-reported profile information is evaluated by comparing and verifying the automatically extracted profile information with the self-reported profile information supplied by the dweller.
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公开(公告)号：US20180041233A1
公开(公告)日：2018-02-08
申请号：US15727968
申请日：2017-10-09
发明人： Koichi TAKEDA , Hirokazu NAGASE , Shinpei WATANABE
CPC分类号： H04B1/04 , H01L23/60 , H01L2924/16152 , H04B1/40 , H04B5/0012 , H04B5/0075 , H04B5/0081 , H04L1/0041 , H04L25/0266
摘要： The transmitter circuit according to one embodiment includes a pulse generating circuit generating a pulse signal based on edges of input data, a first output driver outputting, based on the pulse signal, a first output pulse signal according to one of the edges to a first end of an external insulating coupling element, a second output driver outputting, based on the pulse signal, a second output pulse signal according to other one of the edges to a second end of the insulating coupling element, and an output stop circuit stopping the first and second output pulse signals from being output for a prescribed period from when a power supply voltage is turned on.
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公开(公告)号：US20140329476A1
公开(公告)日：2014-11-06
申请号：US14258246
申请日：2014-04-22
发明人： Shintaro YAMAMICHI , Hirokazu HONDA , Masaki WATANABE , Junichi ARITA , Norio OKADA , Jun UENO , Masashi NISHIMOTO , Michitaka KIMURA , Tomohiro NISHIYAMA
CPC分类号： H04W84/18 , H01L2224/45144 , H01L2224/48091 , H01L2224/49111 , H01L2924/00014 , H01L2924/00
摘要： A compact electronic device as a constituent element of a wireless communication system using a sensor. A first feature of the device is that a first semiconductor chip is bare-chip-mounted over a front surface of a first wiring board in the form of a chip and a second semiconductor chip is bare-chip-mounted over a second wiring board in the form of a chip. A second feature is that a wireless communication unit and a data processing unit which configure a module are separately mounted. A third feature is that the first and second wiring boards are stacked in the board thickness direction to make up the module (electronic device).
摘要翻译： 作为使用传感器的无线通信系统的组成要素的小型电子设备。 该器件的第一个特征是第一半导体芯片以芯片的形式裸地安装在第一布线板的前表面上，并且第二半导体芯片裸地安装在第二布线板上 芯片的形式。 第二特征是分别安装配置模块的无线通信单元和数据处理单元。 第三特征是第一和第二布线板沿板厚度方向堆叠以组成模块（电子设备）。
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公开(公告)号：US20240363750A1
公开(公告)日：2024-10-31
申请号：US18771200
申请日：2024-07-12
发明人： Kazuya UEJIMA , Shiro KAMOHARA , Michio ONDA , Takashi HASE , Tatsuo NISHINO
IPC分类号： H01L29/78 , H01L27/12 , H01L29/06 , H01L29/10 , H01L29/423 , H01L29/45 , H01L29/51 , H03F3/45
CPC分类号： H01L29/7838 , H01L27/1203 , H01L29/0649 , H01L29/1083 , H01L29/42376 , H01L29/45 , H01L29/517 , H03F3/45179
摘要： In a semiconductor device according to an embodiment, a thickness of a semiconductor layer of an SOI substrate on which a field effect transistor constituting an analog circuit is formed is set to 2 nm or more and 24 nm or less.
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公开(公告)号：US20240363747A1
公开(公告)日：2024-10-31
申请号：US18603396
申请日：2024-03-13
发明人： Hiroshi YANAGIGAWA
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/1095
摘要： The semiconductor device includes a pair of gate-electrodes GE formed inside the pair of trenches TR via an gate insulating film (GI), respectively. The pair of column regions PC are spaced apart from each other in the Y-direction. The pair of trenches TR are provided apart from each other in the Y direction, are provided between the pair of column regions PC in the Y direction, and extend in the X direction. The ends of the pair of trenches TR in the X direction are connected to each other by a connecting portion TRa extending in the Y direction. The connection portion TRa is integrated with the pair of trenches TR. The pair of column regions PC extend in the X direction along the pair of trenches TR, and extend in the X direction toward the outer edge of the semiconductor substrate beyond the connection portion TRa.
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公开(公告)号：US20240349509A1
公开(公告)日：2024-10-17
申请号：US18595236
申请日：2024-03-04
发明人： Tadashi YAMAGUCHI
CPC分类号： H10B51/30 , H01L29/40111 , H01L29/516
摘要： A performance of a semiconductor device is improved. A gate insulating film is formed on a semiconductor substrate. A gate electrode is formed on the gate insulating film. A ferroelectric film and a metal film are formed between the gate insulating film and the gate electrode. A thickness of the metal film is smaller than a thickness of the ferroelectric film. The metal film is amorphous.
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公开(公告)号：US20240312950A1
公开(公告)日：2024-09-19
申请号：US18439249
申请日：2024-02-12
发明人： Takaya HOSHI , Fumiaki AGA
IPC分类号： H01L23/00 , H01L23/498
CPC分类号： H01L24/49 , H01L23/49838 , H01L24/48 , H01L2224/48091 , H01L2224/48108 , H01L2224/48227 , H01L2224/49051 , H01L2224/49052 , H01L2224/4917 , H01L2224/49171 , H01L2924/386
摘要： A plurality of wires of a semiconductor device includes: a first wire connected to each of an end portion electrode and a first terminal of a plurality of terminals; and a second wire connected to each of a non-end portion electrode and a second terminal of the plurality of terminals. A loop height of the first wire is greater than a loop height of the second wire.
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公开(公告)号：US12095461B2
公开(公告)日：2024-09-17
申请号：US18054978
申请日：2022-11-14
发明人： Daisuke Moriyama
IPC分类号： H03K19/17 , H03K19/0185 , H03K19/17736 , H03K19/17768
CPC分类号： H03K19/17768 , H03K19/018564 , H03K19/17744
摘要： A semiconductor device includes: an arithmetic circuit that repeats an operation related to a cryptographic processing for the predetermined number of rounds; a holding circuit that holds data related to the number of rounds of an operation of the arithmetic circuit; a judgement circuit that determines whether the number of rounds is the predetermined number of rounds; and an output buffer circuit that outputs the arithmetic result data of the arithmetic circuit when the judgement circuit determines that the number of rounds is the predetermined number. It is configured to duplicate the holding circuit, and not to output the arithmetic result data when two outputs of the duplicated holding circuit are not matched.
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公开(公告)号：US20240304680A1
公开(公告)日：2024-09-12
申请号：US18437947
申请日：2024-02-09
发明人： Takahiro MARUYAMA , Tomoki AYANO , Yuya ABIKO
IPC分类号： H01L29/40 , H01L29/423
CPC分类号： H01L29/401 , H01L29/407 , H01L29/4236
摘要： A field plate electrode is formed in an inside of a trench via a first insulating film. Another part of the field plate electrode is selectively removed such that part of the field plate electrode is left as a lead portion. After the first insulating film is recessed, a protective film is formed on the first insulating film. A gate insulating film is formed in the inside of the trench, and a second insulating film is formed so as to cover the field plate electrode. A conductive film is formed on the gate insulating, second insulating film and protective films. A gate electrode is formed on the field plate electrode by removing the conductive film located in an outside of the trench. At this time, the conductive film formed on each of the protective film and the second insulating film, which are in contact with the lead portion, is removed.
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