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公开(公告)号：US10718733B2
公开(公告)日：2020-07-21
申请号：US16459515
申请日：2019-07-01
发明人： Mark Milgrew , Jonathan Rothberg , James Bustillo
IPC分类号： G01N27/414 , G01N27/27 , C12Q1/6869 , C12Q1/6874
摘要： Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.
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公开(公告)号：US09995708B2
公开(公告)日：2018-06-12
申请号：US14543551
申请日：2014-11-17
发明人： Keith G. Fife , James Bustillo , Jordan Owens
IPC分类号： G01N27/414
CPC分类号： G01N27/414 , G01N27/4145
摘要： In one implementation, a chemical sensor is described. The chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive sidewall spacer is on a sidewall of the opening and contacts the upper surface of the floating gate conductor.
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公开(公告)号：US09841398B2
公开(公告)日：2017-12-12
申请号：US13736566
申请日：2013-01-08
发明人： James Bustillo , Shifeng Li
IPC分类号： H01L29/66 , G01N27/414
CPC分类号： G01N27/414 , G01N27/4145 , G01N27/4148
摘要： In one implementation, a method for manufacturing a chemical detection device is described. The method includes forming a chemical sensor having a sensing surface. A dielectric material is deposited on the sensing surface. A first etch process is performed to partially etch the dielectric material to define an opening over the sensing surface and leave remaining dielectric material on the sensing surface. An etch protect material is formed on a sidewall of the opening. A second etch process is then performed to selectively etch the remaining dielectric material using the etch protect material as an etch mask, thereby exposing the sensing surface.
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公开(公告)号：US09835585B2
公开(公告)日：2017-12-05
申请号：US14197741
申请日：2014-03-05
发明人： Keith G. Fife , Jordan Owens , Shifeng Li , James Bustillo
IPC分类号： H01L27/14 , G01N27/414
CPC分类号： G01N27/4145
摘要： In one implementation, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A conductive element protrudes from the upper surface of the floating gate conductor into an opening. A dielectric material defines a reaction region. The reaction region overlies and extends below an upper surface of the conductive element.
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公开(公告)号：US09778221B2
公开(公告)日：2017-10-03
申请号：US15331779
申请日：2016-10-21
发明人： Kristopher Barbee , John Davidson , Wolfgang Hinz , Shifeng Li , James Bustillo
IPC分类号： G01N27/447 , B01J19/00 , G01N27/414 , C12Q1/68
CPC分类号： G01N27/4473 , B01J19/0046 , B01J2219/00286 , B01J2219/00317 , B01J2219/00459 , B01J2219/00466 , B01J2219/00468 , B01J2219/005 , B01J2219/00596 , B01J2219/00648 , B01J2219/00653 , B01J2219/00704 , B01J2219/00722 , C12Q1/6874 , G01N27/4145 , G01N27/4148 , G01N27/44743
摘要： An apparatus includes a device substrate including an array of sensors. Each sensor of the array of sensors can include a electrode structure disposed at a surface of the device substrate. The apparatus further includes a wall structure overlying the surface of the device substrate and defining an array of wells at least partially corresponding with the array of sensors. The well structure including an electrode layer and an insulative layer.
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公开(公告)号：US09134269B2
公开(公告)日：2015-09-15
申请号：US13794637
申请日：2013-03-11
发明人： Jonathan Rothberg , Wolfgang Hinz , Kim Johnson , James Bustillo
IPC分类号： G01N27/414 , C12Q1/68 , H01L23/00 , H01L29/78 , H01L21/306
CPC分类号： C12Q1/6869 , C12Q1/6874 , G01N27/414 , G01N27/4145 , G01N27/4148 , H01L21/306 , H01L24/18 , H01L24/20 , H01L24/82 , H01L27/088 , H01L29/78 , H01L2224/04105 , H01L2224/16 , H01L2224/76155 , H01L2224/82102 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01052 , H01L2924/01056 , H01L2924/01059 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01082 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , C12Q2565/607 , C12Q2565/301 , C12Q2533/101 , H01L2924/00
摘要： Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
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公开(公告)号：US09128044B2
公开(公告)日：2015-09-08
申请号：US14198382
申请日：2014-03-05
发明人： Keith G. Fife , Jordan Owens , Shifeng Li , James Bustillo
IPC分类号： G01N27/414 , B01L3/00
CPC分类号： G01N27/414 , B01L3/502761 , B01L2200/0668 , B01L2300/0636 , B01L2300/0877 , G01N27/4145 , G01N27/4148
摘要： In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor. The material comprises a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extends a distance along a sidewall of the opening, the distance defined by a thickness of the first dielectric.
摘要翻译： 在一个实施例中，描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 材料限定了延伸到浮动栅极导体的上表面的开口。 该材料包括位于第二电介质下面的第一电介质。 导电元件接触浮动栅极导体的上表面并且沿着开口的侧壁延伸一定距离，该距离由第一电介质的厚度限定。
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公开(公告)号：US09116117B2
公开(公告)日：2015-08-25
申请号：US14197710
申请日：2014-03-05
发明人： Keith G. Fife , Jordan Owens , Shifeng Li , James Bustillo
IPC分类号： G01N27/414
CPC分类号： G01N27/4145
摘要： In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor. A material defines an opening overlying the floating gate conductor. The material comprises a conductive element having an inner surface defining a lower portion of a sidewall of the opening. A dielectric is on the conductive element and has an inner surface defining an upper portion of the sidewall.
摘要翻译： 在一个实施例中，描述了化学传感器。 化学传感器包括具有浮栅导体的化学敏感场效应晶体管。 材料限定了覆盖浮栅导体的开口。 该材料包括具有限定开口的侧壁的下部的内表面的导电元件。 电介质位于导电元件上，并具有限定侧壁上部的内表面。
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公开(公告)号：US20140264465A1
公开(公告)日：2014-09-18
申请号：US13801112
申请日：2013-03-13
发明人： Keith Fife , James Bustillo , Jordan Owens
IPC分类号： G01N27/414 , H01L29/788 , H01L29/66
CPC分类号： H01L29/788 , G01N27/4145
摘要： In one implementation, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive element is on a sidewall of the opening and spaced away from an upper surface of the dielectric material, the conductive element communicating with the floating gate conductor.
摘要翻译： 在一个实施方式中，描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 介电材料限定了延伸到浮动栅极导体的上表面的开口。 导电元件位于开口的侧壁上并与电介质材料的上表面间隔开，导电元件与浮动栅极导体连通。
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公开(公告)号：US11774401B2
公开(公告)日：2023-10-03
申请号：US18045106
申请日：2022-10-07
IPC分类号： G01N27/414 , C12Q1/6874 , H01L29/66
CPC分类号： G01N27/4145 , C12Q1/6874 , G01N27/414 , H01L29/66825
摘要： In one embodiment, a device is described. The device includes a material defining a reaction region. The device also includes a plurality of chemically-sensitive field effect transistors have a common floating gate in communication with the reaction region. The device also includes a circuit to obtain respective output signals from the chemically-sensitive field effect transistors indicating an analyte within the reaction region.
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