公开(公告)号：US20160330830A1

公开(公告)日：2016-11-10

申请号：US15211051

申请日：2016-07-15

申请人： Antti Iihola ,  Tuomas Waris

发明人： Antti Iihola ,  Tuomas Waris

IPC分类号： H05K1/02 ,  H05K1/11 ,  H05K1/18

CPC分类号： H05K1/028 ,  H01L21/568 ,  H01L24/18 ,  H01L24/19 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/83005 ,  H01L2224/83192 ,  H01L2224/92144 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/181 ,  H05K1/115 ,  H05K1/182 ,  H05K1/188 ,  H05K1/189 ,  H05K3/4691 ,  H05K2201/0187 ,  H05K2201/0355 ,  H05K2201/09127 ,  H05K2203/308 ,  H01L2924/0665 ,  H01L2924/00

摘要： Rigid-flex-type circuit-board structure and manufacturing method, in which a flexible membrane and a sacrificial-material piece are attached to an insulator membrane in the location of the flexible zone. An insulator layer, which encloses within itself a sacrificial-material piece is manufactured on the surface of the conductor membrane. The flexible zone is formed in such a way that an opening is made in the insulator layer, through which the sacrificial-material piece is removed. The flexible zone comprises at least part of the flexible membrane as well as conductors, which are manufactured by patterning the insulator membrane at a suitable stage in the method.

摘要翻译： 柔性柔性电路板结构和制造方法，其中柔性膜和牺牲材料片连接在柔性区域的绝缘膜上。 在导体膜的表面上制造绝缘体层，其内包封牺牲材料片。 柔性区形成为在绝缘体层中形成开口，通过该开口除去牺牲材料片。 柔性区域包括柔性膜的至少一部分以及通过在该方法中的合适阶段对绝缘膜进行图案化而制造的导体。

公开(公告)号：US20160327220A1

公开(公告)日：2016-11-10

申请号：US15215053

申请日：2016-07-20

申请人： Michael A. TISCHLER ,  Philippe M. SCHICK ,  Ian ASHDOWN ,  Calvin Wade SHEEN ,  Paul JUNGWIRTH

发明人： Michael A. TISCHLER ,  Philippe M. SCHICK ,  Ian ASHDOWN ,  Calvin Wade SHEEN ,  Paul JUNGWIRTH

IPC分类号： F21K9/66 ,  H01L23/498 ,  H01L23/00 ,  H01L33/62 ,  H01L33/36 ,  H01L33/50 ,  H01L33/48 ,  H05K1/18 ,  H05K3/32 ,  F21V3/02 ,  F21V9/16 ,  F21V23/00 ,  F21V23/02 ,  F21K9/278 ,  F21K9/275 ,  F21V29/74 ,  H05B37/02 ,  H05B33/08 ,  F21K9/64 ,  H01L25/075

CPC分类号： H01L51/0097 ,  F21K9/20 ,  F21K9/275 ,  F21K9/278 ,  F21K9/64 ,  F21K9/65 ,  F21K9/66 ,  F21V3/02 ,  F21V9/30 ,  F21V23/003 ,  F21V23/02 ,  F21V29/74 ,  F21Y2115/10 ,  G02F1/133603 ,  H01L23/367 ,  H01L23/4985 ,  H01L23/5387 ,  H01L24/32 ,  H01L24/83 ,  H01L25/0753 ,  H01L27/156 ,  H01L31/0468 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/36 ,  H01L33/483 ,  H01L33/486 ,  H01L33/502 ,  H01L33/505 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/06102 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/83385 ,  H01L2224/83851 ,  H01L2224/83862 ,  H01L2225/107 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/10321 ,  H01L2924/10322 ,  H01L2924/10323 ,  H01L2924/10324 ,  H01L2924/10328 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10331 ,  H01L2924/10332 ,  H01L2924/10333 ,  H01L2924/10334 ,  H01L2924/10335 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/381 ,  H02S30/00 ,  H05B33/0854 ,  H05B37/0218 ,  H05B37/0227 ,  H05B37/0245 ,  H05K1/189 ,  H05K3/323 ,  H05K2201/09036 ,  H05K2201/10106 ,  H05K2203/302 ,  H01L2924/01015 ,  H01L2924/01031 ,  H01L2924/01051 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014

摘要： In accordance with certain embodiments, a semiconductor die is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the semiconductor die or non-coplanarity of the semiconductor die contacts.

公开(公告)号：US09490193B2

公开(公告)日：2016-11-08

申请号：US13309163

申请日：2011-12-01

申请人： Alexander Heinrich ,  Michael Juerss ,  Konrad Roesl ,  Oliver Eichinger ,  Kok Chai Goh ,  Tobias Schmidt

发明人： Alexander Heinrich ,  Michael Juerss ,  Konrad Roesl ,  Oliver Eichinger ,  Kok Chai Goh ,  Tobias Schmidt

IPC分类号： H01L29/43 ,  H01L29/45 ,  H01L23/482 ,  H01L23/00 ,  H01L23/495

CPC分类号： H01L24/32 ,  H01L23/4827 ,  H01L23/49513 ,  H01L23/49541 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L29/43 ,  H01L29/45 ,  H01L2224/03438 ,  H01L2224/0345 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/08503 ,  H01L2224/2745 ,  H01L2224/29082 ,  H01L2224/29084 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29184 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/83191 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/83464 ,  H01L2224/83469 ,  H01L2224/83815 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01048 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/17738 ,  H01L2924/17747 ,  H01L2924/1776 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/01015 ,  H01L2924/00

摘要： The electronic device includes a carrier, a semiconductor substrate attached to the carrier, and a layer system disposed between the semiconductor substrate and the carrier. The layer system includes an electrical contact layer disposed on the semiconductor substrate. A functional layer is disposed on the electrical contact layer. An adhesion layer is disposed on the functional layer. A solder layer is disposed between the adhesion layer and the carrier.

摘要翻译： 电子设备包括载体，附着到载体的半导体衬底以及设置在半导体衬底和载体之间的层系统。 层系统包括设置在半导体衬底上的电接触层。 功能层设置在电接触层上。 粘附层设置在功能层上。 在粘合层和载体之间设置焊料层。

公开(公告)号：US09484277B2

公开(公告)日：2016-11-01

申请号：US14318403

申请日：2014-06-27

申请人： Intel Corporation

发明人： Ravindra V. Tanikella

IPC分类号： C08L79/08 ,  C08F283/04 ,  H01L23/29 ,  H01L21/48 ,  H01L21/56 ,  H01L23/498 ,  H01L23/00 ,  H05K1/11 ,  H05K3/28 ,  H05K3/42 ,  H05K3/46

CPC分类号： H01L23/49894 ,  C08F283/04 ,  C08G73/121 ,  C08K3/36 ,  C08K9/10 ,  C08K2201/011 ,  C08L79/08 ,  C08L2666/66 ,  H01L21/4857 ,  H01L21/563 ,  H01L23/293 ,  H01L23/295 ,  H01L23/296 ,  H01L23/3185 ,  H01L23/49822 ,  H01L23/49866 ,  H01L24/16 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07025 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/15763 ,  H01L2924/15787 ,  H01L2924/15791 ,  H01L2924/18161 ,  H01L2924/351 ,  H05K1/112 ,  H05K3/28 ,  H05K3/421 ,  H05K3/422 ,  H05K3/4602 ,  H05K3/4688 ,  H05K2201/0154 ,  H05K2201/0158 ,  H05K2201/09436 ,  H05K2201/09472 ,  H05K2201/09509 ,  H05K2201/09827 ,  H05K2203/1163 ,  H05K2203/121 ,  H01L2924/00 ,  H01L2224/0401

摘要： Highly reliable interconnections for microelectronic packaging. In one embodiment, dielectric layers in a build-up interconnect have a gradation in glass transition temperature; and the later applied dielectric layers are laminated at temperatures lower than the glass transition temperatures of the earlier applied dielectric layers. In one embodiment, the glass transition temperatures of earlier applied dielectric films in a build-up interconnect are increased through a thermosetting process to exceed the temperature for laminating the later applied dielectric films. In one embodiment, a polyimide material is formed with embedded catalysts to promote cross-linking after a film of the polyimide material is laminated (e.g., through photo-chemical or thermal degradation of the encapsulant of the catalysts). In one embodiment, the solder resist opening walls have a wettable layer generated through laser assisted seeding so that there is no gap between the solder resist opening walls and no underfill in the solder resist opening.

公开(公告)号：US20160315063A1

公开(公告)日：2016-10-27

申请号：US15105707

申请日：2014-12-04

申请人： NIPPON STEEL & SUMIKIN MATERIALS CO., LTD. ,  NIPPON MICROMETAL CORPORATION

发明人： Tomohiro UNO ,  Yoshiaki HAGIWARA ,  Tetsuya OYAMADA ,  Daizo ODA

IPC分类号： H01L23/00 ,  B23K35/32 ,  B23K35/30

CPC分类号： H01L24/45 ,  B23K35/3006 ,  B23K35/302 ,  B23K35/3033 ,  B23K35/322 ,  C22C5/06 ,  C22C5/08 ,  C22C9/06 ,  H01L24/43 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45032 ,  H01L2224/45101 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45163 ,  H01L2224/45164 ,  H01L2224/45166 ,  H01L2224/45541 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/4809 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/85444 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/013 ,  H01L2924/10253 ,  H01L2924/206 ,  H01L2924/386 ,  H01L2924/01046 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/2076 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2924/01004 ,  H01L2924/01204 ,  H01L2924/01033 ,  H01L2924/01203

摘要： Provided is a bonding wire capable of reducing the occurrence of defective loops. The bonding wire includes: a core material which contains more than 50 mol % of a metal M; an intermediate layer which is formed over the surface of the core material and made of Ni, Pd, the metal M, and unavoidable impurities, and in which the concentration of the Ni is 15 to 80 mol %; and a coating layer formed over the intermediate layer and made of Ni, Pd and unavoidable impurities. The concentration of the Pd in the coating layer is 50 to 100 mol %. The metal M is Cu or Ag, and the concentration of Ni in the coating layer is lower than the concentration of Ni in the intermediate layer.

摘要翻译： 提供能够减少有缺陷环的发生的接合线。 接合线包括：包含大于50摩尔％的金属M的芯材料; 在芯材的表面上形成由Ni，Pd，金属M和不可避免的杂质构成的中间层，其中Ni的浓度为15〜80摩尔％。 以及形成在中间层上并由Ni，Pd和不可避免的杂质构成的涂层。 涂层中Pd的浓度为50〜100摩尔％。 金属M是Cu或Ag，并且涂层中的Ni的浓度低于中间层中的Ni的浓度。

公开(公告)号：US09466579B2

公开(公告)日：2016-10-11

申请号：US12670484

申请日：2008-07-17

申请人： Hendrik Pieter Hochstenbach ,  Willem Dirk Van Driel

发明人： Hendrik Pieter Hochstenbach ,  Willem Dirk Van Driel

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L24/05 ,  H01L23/3192 ,  H01L23/522 ,  H01L23/5283 ,  H01L23/53295 ,  H01L23/562 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/13006 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/05552

摘要： The present application relates to a reinforcing structure for reinforcing a stack of layers in a semiconductor component, wherein at least one reinforcing element having at least one integrated anchor-like part, is provided. The basic idea is to reinforce bond pad structures by providing a better mechanical connection between the layers below an advanced underbump metallization (BUMA, UBM) by providing reinforcing elements under the UBM and/or BUMA layer.

摘要翻译： 本申请涉及一种用于加强半导体部件中的叠层的加强结构，其中提供至少一个具有至少一个集成锚固部件的加强元件。 基本思想是通过在UBM和/或BUMA层下提供增强元件，在先进的下凸块金属化（BUMA，UBM）之下的层之间提供更好的机械连接来增强粘结垫结构。

公开(公告)号：US20160293542A1

公开(公告)日：2016-10-06

申请号：US15181995

申请日：2016-06-14

申请人： Renesas Electronics Corporation

发明人： Katsuhiko HOTTA ,  Kyoko SASAHARA

IPC分类号： H01L23/522 ,  H01L23/532 ,  H01L23/528

CPC分类号： H01L23/5226 ,  H01L21/76808 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76841 ,  H01L21/76895 ,  H01L21/823871 ,  H01L23/5258 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105

摘要： For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.

公开(公告)号：US20160288272A1

公开(公告)日：2016-10-06

申请号：US15038177

申请日：2013-11-21

申请人： HERAEUS DEUTSCHLAND GMBH & CO. KG

发明人： Annette LUKAS ,  Patrick WENZEL ,  Michael DEUSCHLE ,  Eugen MILKE ,  Sven THOMAS ,  Jürgen SCHARF

IPC分类号： B23K35/40 ,  B23K35/02 ,  H01L23/00 ,  B23K35/32 ,  C23F17/00 ,  C23C18/08 ,  B23K35/30

CPC分类号： B23K35/40 ,  B23K20/007 ,  B23K20/10 ,  B23K35/0261 ,  B23K35/0272 ,  B23K35/30 ,  B23K35/3006 ,  B23K35/302 ,  B23K35/322 ,  B23K35/404 ,  B23K2101/42 ,  C22F1/08 ,  C23C14/14 ,  C23C18/08 ,  C23C28/00 ,  C23C30/00 ,  C23F17/00 ,  C25D5/34 ,  C25D7/0607 ,  H01B1/026 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/745 ,  H01L24/85 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2224/4321 ,  H01L2224/43823 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43848 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45663 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/45678 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48824 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01076 ,  H01L2924/12044 ,  H01L2924/181 ,  H05K1/09 ,  H05K2201/10287 ,  H05K2203/049 ,  Y10T428/12875 ,  Y10T428/12889 ,  H01L2924/00 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01046 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/01014 ,  H01L2924/013 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/00012 ,  H01L2924/01006 ,  H01L2924/01001 ,  H01L2924/01008 ,  H01L2924/01007 ,  H01L2924/01204 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00013 ,  H01L2924/01049 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/206

摘要： A bonding wire according to the invention contains a core having a surface and a coating layer which is at least partially superimposed over the surface of the core. The core contains a core main component selected from copper and silver and the coating layer contains a coating component selected from palladium, platinum, gold, rhodium, ruthenium, osmium and iridium. The coating layer is applied on the surface of the core by depositing a film of a liquid containing a coating component precursor onto a wire core precursor and heating the deposited film to decompose the coating component precursor into a metallic phase.

摘要翻译： 根据本发明的接合线包含具有表面的芯和至少部分地叠置在芯的表面上的涂层。 芯包含选自铜和银的核心主要成分，涂层含有选自钯，铂，金，铑，钌，锇和铱的涂层成分。 通过将含有涂层组分前体的液体的膜沉积到芯芯前体上并加热沉积膜以将涂层组分前体分解成金属相，将涂层施加在芯的表面上。

公开(公告)号：US09459056B2

公开(公告)日：2016-10-04

申请号：US13602156

申请日：2012-09-01

申请人： Gabe Cherian

发明人： Gabe Cherian

IPC分类号： H01L23/367 ,  H01L23/373 ,  F28F3/00 ,  F28F3/02 ,  F28D15/02 ,  H01L23/427

CPC分类号： F28F3/00 ,  F28D15/0275 ,  F28F3/02 ,  F28F3/022 ,  F28F2255/02 ,  H01L23/367 ,  H01L23/427 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2924/00011 ,  H01L2924/01015 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01005

摘要： New heat spreaders are proposed to connect high power, high heat generating electronic devices to their downstream heat dissipating cooling components. First, the spreaders distribute the high heat flux over a wider surface area, thus reducing the flux to levels more easily handled by the downstream cooling system. Second, the spreaders incorporate flexible columns or elements to join the electronic devices to the main body of the spreader, so as to negate the undesirable effects of CTE mismatch. Columns with a higher standoff distance between the components are more flexible than a direct flat interface attachment between the heat source and the heat sink, and will have less chance of delaminating. Several embodiments are proposed and can be used in appropriate situations. The heat spreaders can be helpful in harsh environments and in high heat generating applications, such as spacecraft, satellites, as well as land locked high power computer systems.

摘要翻译： 提出了新的散热器将大功率，高发热电子设备连接到其下游散热冷却组件。 首先，吊具在较宽的表面积上分配高热通量，从而将通量降低到下游冷却系统更容易处理的水平。 第二，吊具结合柔性柱或元件将电子装置连接到吊具的主体，以抵消CTE不匹配的不良影响。 在组件之间具有较高间隔距离的柱比热源和散热器之间的直接平坦接口连接更灵活，并且具有较少的分层机会。 提出了几个实施例并且可以在适当的情况下使用。 散热器可用于恶劣环境和高发热应用，如航天器，卫星以及陆上高功率计算机系统。

公开(公告)号：US20160274056A1

公开(公告)日：2016-09-22

申请号：US15049638

申请日：2016-02-22

申请人： Life Technologies Corporation

发明人： Jonathan M. ROTHBERG ,  Wolfgang Hinz ,  Kim L. Johnson ,  James Bustillo

IPC分类号： G01N27/414 ,  C12Q1/68 ,  G01N33/543

CPC分类号： G01N27/4148 ,  C12Q1/6818 ,  C12Q1/6874 ,  G01N27/4145 ,  G01N33/54373 ,  G01N33/5438 ,  H01L27/088 ,  H01L29/42324 ,  H01L29/78 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01073 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10T436/22 ,  C12Q2565/607 ,  C12Q2565/301 ,  C12Q2533/101

摘要： Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.