公开(公告)号：US20240162163A1

公开(公告)日：2024-05-16

申请号：US18461478

申请日：2023-09-05

申请人： Texas Instruments Incorporated

发明人： Sreenivasan K Koduri

IPC分类号： H01L23/552 ,  H01L23/00 ,  H01L23/488

CPC分类号： H01L23/552 ,  H01L23/488 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/95 ,  H01L2224/03318 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05007 ,  H01L2224/05025 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05186 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05568 ,  H01L2224/05655 ,  H01L2224/11312 ,  H01L2224/1146 ,  H01L2224/11472 ,  H01L2224/1191 ,  H01L2224/13012 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13618 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13669 ,  H01L2224/1368 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/1403 ,  H01L2224/16058 ,  H01L2224/16227 ,  H01L2224/17107 ,  H01L2224/32227 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/83193

摘要： A microelectronic device includes a die with input/output (I/O) terminals, and a dielectric layer on the die. The microelectronic device includes electrically conductive pillars which are electrically coupled to the I/O terminals, and extend through the dielectric layer to an exterior of the microelectronic device. Each pillar includes a column electrically coupled to one of the I/O terminals, and a head contacting the column at an opposite end of the column from the I/O terminal. The head extends laterally past the column in at least one lateral direction. Methods of forming the pillars and the dielectric layer are disclosed.

公开(公告)号：US20240006360A1

公开(公告)日：2024-01-04

申请号：US17853978

申请日：2022-06-30

申请人： NANYA TECHNOLOGY CORPORATION

发明人： Hsih-Yang CHIU

IPC分类号： H01L23/00

CPC分类号： H01L24/13 ,  H01L24/16 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/16148 ,  H01L2224/81203 ,  H01L2224/11622 ,  H01L2224/11462 ,  H01L2224/13147 ,  H01L2224/13007 ,  H01L2224/13541 ,  H01L2224/13553 ,  H01L2224/13561 ,  H01L2224/1358 ,  H01L2224/13687 ,  H01L24/05 ,  H01L2224/05624 ,  H01L2224/05555 ,  H01L2224/13666 ,  H01L2224/13647 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13014 ,  H01L2924/3841

摘要： The present application provides a semiconductor structure having a copper pillar within a solder bump, and a manufacturing method of the semiconductor structure. The semiconductor structure includes a substrate having a pad disposed thereon and a passivation at least partially surrounding the pad; and a conductive bump structure disposed over the passivation and the pad, wherein the conductive bump structure includes a first bump portion disposed over the passivation and the pad, a conductive pillar disposed over the first bump portion, and a second bump portion disposed over and surrounding the conductive pillar.

公开(公告)号：US20230207507A1

公开(公告)日：2023-06-29

申请号：US18177876

申请日：2023-03-03

申请人： Google LLC

发明人： Zhimin Jamie Yao ,  Bob Benjamin Buckley

IPC分类号： H01L23/00 ,  G06N10/00 ,  H01L25/16

CPC分类号： H01L24/13 ,  H01L24/81 ,  G06N10/00 ,  H01L25/16 ,  H01L2924/04941 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13113 ,  H01L2224/1312 ,  H01L2224/13144 ,  H01L2224/13179 ,  H01L2224/13147 ,  H01L2224/13117 ,  H01L2224/13139 ,  H01L2224/13109 ,  H01L2224/13105 ,  H01L2224/1357 ,  H01L2224/13666 ,  H01L2224/8112 ,  H01L2224/81203 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01041 ,  H01L2924/01029 ,  H01L2924/01048 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01031

摘要： A quantum computing system can include a first substrate including one or more quantum control devices. The quantum computing system can include a second substrate including one or more quantum circuit elements. The quantum computing system can include one or more tin contact bonds formed on the first substrate and the second substrate. The tin contact bonds can bond the first substrate to the second substrate. The tin contact bonds can be or can include tin, such as a tin alloy.

公开(公告)号：US20190131261A1

公开(公告)日：2019-05-02

申请号：US16233218

申请日：2018-12-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Hua Yu ,  Chung-Shi Liu ,  Ming-Da Cheng ,  Mirng-Ji Lii ,  Meng-Tse Chen ,  Wei-Hung Lin

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065 ,  B23K35/00 ,  B23K35/02 ,  B23K35/22 ,  B23K35/26 ,  B23K35/36 ,  H01L25/10 ,  H01L21/56 ,  H01L25/00 ,  H01L25/03

CPC分类号： H01L24/05 ,  B23K35/001 ,  B23K35/0222 ,  B23K35/22 ,  B23K35/262 ,  B23K35/3613 ,  H01L21/561 ,  H01L23/3135 ,  H01L23/3178 ,  H01L23/498 ,  H01L23/49816 ,  H01L24/08 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/94 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0652 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/06181 ,  H01L2224/08113 ,  H01L2224/1184 ,  H01L2224/13005 ,  H01L2224/13014 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13026 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13184 ,  H01L2224/1355 ,  H01L2224/13561 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13666 ,  H01L2224/1412 ,  H01L2224/14181 ,  H01L2224/16104 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17051 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/381 ,  H01L2924/3841 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01083 ,  H01L2924/013 ,  H01L2924/206 ,  H01L2224/05552 ,  H01L2924/00012

摘要： Some embodiments relate to a semiconductor device package, which includes a substrate with a contact pad. A non-solder ball is coupled to the contact pad at a contact pad interface surface. A layer of solder is disposed over an outer surface of the non-solder ball, and has an inner surface and an outer surface which are generally concentric with the outer surface of the non-solder ball. An intermediate layer separates the non-solder ball and the layer of solder. The intermediate layer is distinct in composition from both the non-solder ball and the layer of solder. Sidewalls of the layer of solder are curved or sphere-like and terminate at a planar surface, which is disposed at a maximum height of the layer of solder as measured from the contact pad interface surface.

公开(公告)号：US09899300B2

公开(公告)日：2018-02-20

申请号：US15465427

申请日：2017-03-21

申请人： ROHM CO., LTD.

发明人： Kenji Fujii ,  Yasumasa Kasuya ,  Mamoru Yamagami ,  Naoki Kinoshita ,  Motoharu Haga

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L23/49527 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3142 ,  H01L23/3171 ,  H01L23/3675 ,  H01L23/4334 ,  H01L23/4822 ,  H01L23/49503 ,  H01L23/49548 ,  H01L23/49551 ,  H01L23/49568 ,  H01L23/49572 ,  H01L23/525 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/33 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1161 ,  H01L2224/11825 ,  H01L2224/13008 ,  H01L2224/13011 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/13024 ,  H01L2224/13147 ,  H01L2224/13561 ,  H01L2224/13582 ,  H01L2224/13624 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/16014 ,  H01L2224/16245 ,  H01L2224/16258 ,  H01L2224/17107 ,  H01L2224/29008 ,  H01L2224/29082 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/753 ,  H01L2224/75301 ,  H01L2224/75981 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81201 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/8146 ,  H01L2224/81464 ,  H01L2224/81466 ,  H01L2224/8183 ,  H01L2224/83191 ,  H01L2224/83201 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/83464 ,  H01L2224/83466 ,  H01L2224/8383 ,  H01L2224/92225 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/05042 ,  H01L2924/07025 ,  H01L2924/17724 ,  H01L2924/17747 ,  H01L2924/181 ,  H01L2924/182 ,  H01L2924/186 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/05166 ,  H01L2924/01028 ,  H01L2924/0665

摘要： A semiconductor device has a semiconductor element provided with a functional surface on which a functional circuit is formed and with a back surface facing in the opposite direction to the functional surface, while also having a lead supporting the semiconductor element and electrically connected to the semiconductor element, and a resin package covering at least a portion of the semiconductor element and the lead. The semiconductor element has a functional surface side electrode formed on the functional surface and equipped with a functional surface side raised part that projects in the direction in which the functional surface faces. The functional surface side raised part of the functional surface side electrode is joined to the lead by solid state bonding.

公开(公告)号：US20170345739A1

公开(公告)日：2017-11-30

申请号：US15289187

申请日：2016-10-09

申请人： International Business Machines Corporation

发明人： Daniel C. Edelstein ,  Chih-Chao Yang

IPC分类号： H01L23/48 ,  H01L21/822 ,  H01L21/768 ,  H01L27/06 ,  H01L23/532

CPC分类号： H01L23/481 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76898 ,  H01L21/8221 ,  H01L23/53238 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/92 ,  H01L24/94 ,  H01L25/065 ,  H01L27/0688 ,  H01L2224/04 ,  H01L2224/04026 ,  H01L2224/05009 ,  H01L2224/05576 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/06102 ,  H01L2224/08146 ,  H01L2224/13009 ,  H01L2224/13147 ,  H01L2224/13565 ,  H01L2224/13583 ,  H01L2224/13657 ,  H01L2224/13666 ,  H01L2224/13673 ,  H01L2224/13676 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/13687 ,  H01L2224/29006 ,  H01L2224/29187 ,  H01L2224/32146 ,  H01L2224/73204 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/05442 ,  H01L2224/83 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/01074 ,  H01L2924/0499 ,  H01L2924/01027 ,  H01L2924/0498 ,  H01L2924/01044 ,  H01L2224/08 ,  H01L2224/80 ,  H01L2224/81

摘要： An advanced through silicon via structure for is described. The device includes a substrate including integrated circuit devices. A high aspect ratio through substrate via is disposed in the substrate. The through substrate via has vertical sidewalls and a horizontal bottom. The substrate has a horizontal field area surrounding the through substrate via. A metallic barrier layer is disposed on the sidewalls of the through substrate via. A surface portion of the metallic barrier layer has been converted to a nitride surface layer by a nitridation process. The nitride surface layer enhances the nucleation of subsequent depositions. A first metal layer fills the through substrate via and has a recess in an upper portion. A second barrier layer is disposed over the recess. A second metal layer is disposed over the second barrier layer and creates a contact.

公开(公告)号：US20170194234A1

公开(公告)日：2017-07-06

申请号：US15465427

申请日：2017-03-21

申请人： ROHM CO., LTD.

发明人： Kenji FUJII ,  Yasumasa KASUYA ,  Mamoru YAMAGAMI ,  Naoki KINOSHITA ,  Motoharu HAGA

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L23/49527 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3142 ,  H01L23/3171 ,  H01L23/3675 ,  H01L23/4334 ,  H01L23/4822 ,  H01L23/49503 ,  H01L23/49548 ,  H01L23/49551 ,  H01L23/49568 ,  H01L23/49572 ,  H01L23/525 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/33 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1161 ,  H01L2224/11825 ,  H01L2224/13008 ,  H01L2224/13011 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/13024 ,  H01L2224/13147 ,  H01L2224/13561 ,  H01L2224/13582 ,  H01L2224/13624 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/16014 ,  H01L2224/16245 ,  H01L2224/16258 ,  H01L2224/17107 ,  H01L2224/29008 ,  H01L2224/29082 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/753 ,  H01L2224/75301 ,  H01L2224/75981 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81201 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/8146 ,  H01L2224/81464 ,  H01L2224/81466 ,  H01L2224/8183 ,  H01L2224/83191 ,  H01L2224/83201 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/83464 ,  H01L2224/83466 ,  H01L2224/8383 ,  H01L2224/92225 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/05042 ,  H01L2924/07025 ,  H01L2924/17724 ,  H01L2924/17747 ,  H01L2924/181 ,  H01L2924/182 ,  H01L2924/186 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/05166 ,  H01L2924/01028 ,  H01L2924/0665

摘要： A semiconductor device has a semiconductor element provided with a functional surface on which a functional circuit is formed and with a back surface facing in the opposite direction to the functional surface, while also having a lead supporting the semiconductor element and electrically connected to the semiconductor element, and a resin package covering at least a portion of the semiconductor element and the lead. The semiconductor element has a functional surface side electrode formed on the functional surface and equipped with a functional surface side raised part that projects in the direction in which the functional surface faces. The functional surface side raised part of the functional surface side electrode is joined to the lead by solid state bonding.

公开(公告)号：US20170033075A1

公开(公告)日：2017-02-02

申请号：US15294508

申请日：2016-10-14

申请人： Advanced Semiconductor, Inc.

发明人： Min-Fong SHU ,  Yi-Hsiu TSENG ,  Kuan-Neng CHEN ,  Shu-Chiao KUO

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56

CPC分类号： H01L24/81 ,  H01L21/4853 ,  H01L21/563 ,  H01L23/13 ,  H01L23/3142 ,  H01L23/3185 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/564 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05623 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/1182 ,  H01L2224/13026 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13582 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13618 ,  H01L2224/13623 ,  H01L2224/13624 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13663 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13678 ,  H01L2224/13687 ,  H01L2224/1607 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/16501 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81096 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81385 ,  H01L2224/81395 ,  H01L2224/81409 ,  H01L2224/81411 ,  H01L2224/81418 ,  H01L2224/81423 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/81463 ,  H01L2224/81464 ,  H01L2224/81466 ,  H01L2224/81476 ,  H01L2224/81478 ,  H01L2224/81487 ,  H01L2224/81815 ,  H01L2224/8183 ,  H01L2224/81898 ,  H01L2224/83104 ,  H01L2224/83193 ,  H01L2224/92125 ,  H01L2924/00015 ,  H01L2924/15311 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/3511 ,  H01L2924/381 ,  H01L2224/8109 ,  H01L2924/00014 ,  H01L2924/01076 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/053

摘要： A method of manufacturing a bonding structure includes (a) providing a substrate, wherein the substrate includes a top surface and at least one bonding pad disposed adjacent to the top surface of the substrate, at least one bonding pad having a sloped surface with a first slope; (b) providing a semiconductor element, wherein the semiconductor element includes at least one pillar, and at least one pillar has a sidewall with a second slope, wherein the absolute value of the first slope is smaller than the absolute value of the second slope; and (c) bonding at least one pillar to a portion of the sloped surface of corresponding ones of the at least one bonding pad.

摘要翻译： 一种接合结构的制造方法包括：（a）提供基板，其中所述基板包括顶表面和邻近所述基板顶表面设置的至少一个接合焊盘，至少一个接合焊盘，其具有倾斜表面，其具有第一 坡; （b）提供半导体元件，其中所述半导体元件包括至少一个支柱，并且至少一个支柱具有具有第二斜率的侧壁，其中所述第一斜率的绝对值小于所述第二斜率的绝对值; 和（c）将至少一个柱结合到所述至少一个接合焊盘中相应的一个焊盘的倾斜表面的一部分上。

公开(公告)号：US09559028B2

公开(公告)日：2017-01-31

申请号：US14807868

申请日：2015-07-23

申请人： ROHM CO., LTD.

发明人： Hirofumi Takeda ,  Yoshihisa Takada

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L23/13 ,  G01C17/30 ,  H01L23/24 ,  H01L23/31 ,  H01L23/14 ,  H01L23/498 ,  H01L23/552 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00

CPC分类号： H01L25/0652 ,  G01C17/30 ,  H01L23/13 ,  H01L23/147 ,  H01L23/24 ,  H01L23/3121 ,  H01L23/49811 ,  H01L23/552 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L25/065 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/11618 ,  H01L2224/11825 ,  H01L2224/11826 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13566 ,  H01L2224/13583 ,  H01L2224/13647 ,  H01L2224/13666 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/81011 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2225/06568 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2924/10158 ,  H01L2924/15156 ,  H01L2924/15157 ,  H01L2924/15321 ,  H01L2924/19102 ,  H01L2924/19105 ,  H01L2924/3512 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00012

摘要： A semiconductor device is provided. The semiconductor device can be manufactured with a reduced cost. The semiconductor device (1D) includes, a substrate (100D), which includes a main surface (101D) and a recess (108D) depressed from the main surface (101D), and includes a semiconductor material; a wiring layer (200D) in which at least a portion thereof is formed on the substrate (100D); one or more first elements (370D) accommodated in the recess (108D); a sealing resin (400D) covering at least a portion of the one or more first elements (370D) and filled in the recess (108D); and a plurality of columnar conductive portions (230D) penetrating through the sealing resin (400D) in the depth direction of the recess (108D), and respectively connected with the portion of the wiring layer (200D) that is formed at the recess (108D).

摘要翻译： 提供半导体器件。 可以以降低的成本制造半导体器件。 半导体器件（1D）包括：衬底（100D），其包括从主表面（101D）凹陷的主表面（101D）和凹部（108D），并且包括半导体材料; 布线层（200D），其中至少一部分形成在所述基板（100D）上; 容纳在所述凹部（108D）中的一个或多个第一元件（370D）; 覆盖所述一个或多个第一元件（370D）的至少一部分并填充在所述凹部（108D）中的密封树脂（400D）; 以及在所述凹部（108D）的深度方向上穿过所述密封树脂（400D）的多个柱状导电部（230D），分别与形成在所述凹部（108D）的所述布线层（200D）的部分连接 ）。

公开(公告)号：US20160240450A1

公开(公告)日：2016-08-18

申请号：US15096792

申请日：2016-04-12

申请人： ROHM CO., LTD.

发明人： Kenji FUJII ,  Yasumasa KASUYA ,  Mamoru YAMAGAMI ,  Naoki KINOSHITA ,  Motoharu HAGA

IPC分类号： H01L23/29 ,  H01L23/31 ,  H01L23/00 ,  H01L23/367

CPC分类号： H01L23/49527 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3142 ,  H01L23/3171 ,  H01L23/3675 ,  H01L23/4334 ,  H01L23/4822 ,  H01L23/49503 ,  H01L23/49548 ,  H01L23/49551 ,  H01L23/49568 ,  H01L23/49572 ,  H01L23/525 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/33 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1161 ,  H01L2224/11825 ,  H01L2224/13008 ,  H01L2224/13011 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/13024 ,  H01L2224/13147 ,  H01L2224/13561 ,  H01L2224/13582 ,  H01L2224/13624 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/16014 ,  H01L2224/16245 ,  H01L2224/16258 ,  H01L2224/17107 ,  H01L2224/29008 ,  H01L2224/29082 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/753 ,  H01L2224/75301 ,  H01L2224/75981 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81201 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/8146 ,  H01L2224/81464 ,  H01L2224/81466 ,  H01L2224/8183 ,  H01L2224/83191 ,  H01L2224/83201 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/83464 ,  H01L2224/83466 ,  H01L2224/8383 ,  H01L2224/92225 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/05042 ,  H01L2924/07025 ,  H01L2924/17724 ,  H01L2924/17747 ,  H01L2924/181 ,  H01L2924/182 ,  H01L2924/186 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/05166 ,  H01L2924/01028 ,  H01L2924/0665

摘要： A semiconductor device has a semiconductor element provided with a functional surface on which a functional circuit is formed and with a back surface facing in the opposite direction to the functional surface, while also having a lead supporting the semiconductor element and electrically connected to the semiconductor element, and a resin package covering at least a portion of the semiconductor element and the lead. The semiconductor element has a functional surface side electrode formed on the functional surface and equipped with a functional surface side raised part that projects in the direction in which the functional surface faces. The functional surface side raised part of the functional surface side electrode is joined to the lead by solid state bonding.