- 专利标题: SEMICONDUCTOR STRUCTURE HAVING COPPER PILLAR WITHIN SOLDER BUMP AND MANUFACTURING METHOD THEREOF
-
申请号: US17853978申请日: 2022-06-30
-
公开(公告)号: US20240006360A1公开(公告)日: 2024-01-04
- 发明人: Hsih-Yang CHIU
- 申请人: NANYA TECHNOLOGY CORPORATION
- 申请人地址: TW New Taipei City
- 专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址: TW New Taipei City
- 主分类号: H01L23/00
- IPC分类号: H01L23/00
摘要:
The present application provides a semiconductor structure having a copper pillar within a solder bump, and a manufacturing method of the semiconductor structure. The semiconductor structure includes a substrate having a pad disposed thereon and a passivation at least partially surrounding the pad; and a conductive bump structure disposed over the passivation and the pad, wherein the conductive bump structure includes a first bump portion disposed over the passivation and the pad, a conductive pillar disposed over the first bump portion, and a second bump portion disposed over and surrounding the conductive pillar.
信息查询
IPC分类: