公开(公告)号：US20160155697A1

公开(公告)日：2016-06-02

申请号：US15003632

申请日：2016-01-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Min Liang ,  Jiun Yi Wu

IPC分类号： H01L23/498 ,  H01L23/00

CPC分类号： H01L23/49838 ,  H01L22/14 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49894 ,  H01L24/02 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/11614 ,  H01L2224/11622 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/1712 ,  H01L2224/17132 ,  H01L2224/81424 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81466 ,  H01L2224/81815 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/05042 ,  H01L2924/0533 ,  H01L2924/0534 ,  H01L2924/05342 ,  H01L2924/05432 ,  H01L2924/05442 ,  H01L2924/05994 ,  H01L2924/14 ,  H01L2924/1531 ,  H01L2924/15787 ,  H01L2924/2064 ,  H01L2924/20641 ,  H05K1/0268 ,  H05K1/113 ,  H05K3/4007 ,  H05K3/4682 ,  H05K2201/0367 ,  H05K2201/096 ,  H05K2201/0989 ,  H05K2201/10674 ,  H05K2203/0353 ,  H01L2924/014 ,  H01L2924/00014

摘要： A die and a substrate are provided. The die comprises at least one integrated circuit chip, and the substrate comprises first and second subsets of conductive pillars extending at least partially therethrough. Each of the first subset of conductive pillars comprises a protrusion bump pad protruding from a surface of the substrate, and the second subset of conductive pillars each partially form a trace recessed within the surface of the substrate. The die is coupled to the substrate via a plurality of conductive bumps each extending between one of the protrusion bump pads and the die.

公开(公告)号：US09355986B2

公开(公告)日：2016-05-31

申请号：US14378226

申请日：2013-02-14

申请人： MITSUBISHI MATERIALS CORPORATION

发明人： Shuji Nishimoto ,  Kimihito Nishikawa ,  Yoshiyuki Nagatomo

IPC分类号： H01L23/48 ,  H01L23/00 ,  B23K1/00 ,  B23K35/30 ,  B23K35/36 ,  B23K35/02 ,  B23K1/19 ,  B23K1/20 ,  H01L23/367 ,  H01L23/373

CPC分类号： H01L24/33 ,  B23K1/0016 ,  B23K1/19 ,  B23K1/203 ,  B23K35/0222 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/0272 ,  B23K35/30 ,  B23K35/3006 ,  B23K35/36 ,  B23K35/3602 ,  B23K35/3607 ,  H01L23/367 ,  H01L23/3735 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/03505 ,  H01L2224/04026 ,  H01L2224/27505 ,  H01L2224/29005 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29239 ,  H01L2224/29286 ,  H01L2224/29299 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83539 ,  H01L2224/83686 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/05432 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/01049 ,  H01L2924/207 ,  H01L2924/05341 ,  H01L2924/05442 ,  H01L2924/053 ,  H01L2924/206

摘要： There are provided a solder joint structure, a power module using the joint structure, a power module substrate with a heat sink and a method of manufacturing the same, as well as a solder base layer forming paste which is disposed and fired on a metal member to thereby react with an oxide film generated on the surface of the metal member and form the solder base layer on the metal member, capable of suppressing the occurrence of waviness and wrinkles on the surface of the metal member even at the time of loading the power cycle and heat cycle and improving the joint reliability with a joint member.

摘要翻译： 提供了焊接结构，使用接合结构的功率模块，具有散热器的功率模块基板及其制造方法，以及焊接基底层形成用糊料，其设置在金属部件上 从而与在金属构件的表面上产生的氧化膜反应并在金属构件上形成焊料基底层，即使在加载电力时也能够抑制金属构件的表面上的波纹和褶皱的发生 循环和热循环，并通过联合成员提高联合可靠性。

公开(公告)号：US09351399B2

公开(公告)日：2016-05-24

申请号：US14096626

申请日：2013-12-04

申请人： NITTO DENKO CORPORATION

发明人： Yasunari Ooyabu ,  Yoshihiko Kitayama ,  Munehisa Mitani

IPC分类号： H01L25/075 ,  H05K1/11 ,  H01L23/00 ,  H01L33/52 ,  H01L33/62

CPC分类号： H05K1/11 ,  H01L24/97 ,  H01L25/0753 ,  H01L33/52 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting device assembly includes a plurality of light-emitting devices, the plurality of light-emitting devices being provided continuously, the plurality of light-emitting devices each including a substrate, an optical semiconductor element mounted on the surface of the substrate, an encapsulating layer formed on the substrate surface to encapsulate the optical semiconductor element, and an electrode formed on the substrate surface so as to be electrically connected to the optical semiconductor element. The substrate has a fragile region formed to partition off the light-emitting devices that are disposed next to each other.

摘要翻译： 发光装置组件包括多个发光装置，所述多个发光装置连续地设置，所述多个发光装置各自包括基板，安装在所述基板的表面上的光半导体元件， 形成在基板表面上以封装光学半导体元件的封装层，以及形成在基板表面上以电连接到光学半导体元件的电极。 基板具有形成为分隔彼此相邻布置的发光器件的脆弱区域。

公开(公告)号：US09349665B2

公开(公告)日：2016-05-24

申请号：US13745366

申请日：2013-01-18

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsien-Wei Chen ,  Tsung-Yuan Yu ,  Jie Chen ,  Ying-Ju Chen

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/44 ,  H01L23/31 ,  H01L23/00 ,  H01L23/498 ,  H01L23/525

CPC分类号： H01L23/3114 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/525 ,  H01L24/05 ,  H01L24/08 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/13007 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/00

摘要： Methods and apparatuses for forming an under-bump metallization (UBM) pad above a dielectric layer are disclosed. The dielectric layer may be above a metal layer and comprises a first opening and a second opening surrounding the first opening, which divide the dielectric layer into a first area and a second area. An UBM pad extends into and fills the first opening of the dielectric layer, above the first area between the first opening and the second opening, and may further extends down at least partly into the second opening covering a part or the whole of the second opening of the dielectric layer. The UBM pad may further extend over a part of the second area of the dielectric layer if the UBM pad fills the whole of the second opening of the dielectric layer. A solder ball may be mounted on the UBM pad.

摘要翻译： 公开了在电介质层上形成凸块下金属化（UBM）焊盘的方法和装置。 电介质层可以在金属层之上，并且包括围绕第一开口的第一开口和第二开口，其将电介质层分成第一区域和第二区域。 UBM垫延伸并填充介电层的第一开口，位于第一开口和第二开口之间的第一区域上方，并且还可以进一步向下延伸至第二开口，第二开口覆盖第二开口的一部分或全部 的介电层。 如果UBM垫填充介电层的整个第二开口，则UBM垫可以进一步延伸到电介质层的第二区域的一部分上。 焊球可以安装在UBM垫上。

公开(公告)号：US09343383B2

公开(公告)日：2016-05-17

申请号：US13410788

申请日：2012-03-02

申请人： Van Mieczkowski

发明人： Van Mieczkowski

IPC分类号： H01L23/047 ,  H01L23/20 ,  H01L23/22 ,  H01L23/60 ,  H01L23/00

CPC分类号： H01L23/047 ,  H01L23/20 ,  H01L23/22 ,  H01L23/60 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10338 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/16195 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

摘要： A high voltage semiconductor device can include a high voltage semiconductor device package that includes a wall defining a recess within the high voltage semiconductor device package. A high voltage semiconductor chip can be in the recess and a high voltage electric arc suppression material can be in the recess.

摘要翻译： 高电压半导体器件可以包括高压半导体器件封装，其包括限定高压半导体器件封装内的凹部的壁。 高压半导体芯片可以在凹槽中，并且高压电弧抑制材料可以在凹部中。

公开(公告)号：US20160118371A1

公开(公告)日：2016-04-28

申请号：US14733909

申请日：2015-06-08

申请人： Samsung Electronics Co., Ltd.

发明人： Chul PARK

IPC分类号： H01L25/18 ,  H01L25/065 ,  H01L23/00 ,  H01L23/498

CPC分类号： H01L25/18 ,  H01L23/13 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/81193 ,  H01L2224/81194 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2924/10253 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/14511 ,  H01L2924/15153 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2224/81 ,  H01L2924/014

摘要： A semiconductor package includes a package substrate, a first semiconductor chip having a plurality of first connection terminals disposed on a bottom surface thereof, and a second semiconductor chip having a plurality of second connection terminals disposed on a top surface thereof. The first semiconductor chip is stacked on the package substrate so that a first group of connection terminals among the plurality of first connection terminals are combined with the package substrate. The second semiconductor chip is disposed so that the plurality of second connection terminals are combined with a second group of connection terminals among the plurality of first connection terminals.

摘要翻译： 半导体封装包括封装衬底，具有设置在其底表面上的多个第一连接端子的第一半导体芯片和设置在其顶表面上的多个第二连接端子的第二半导体芯片。 第一半导体芯片堆叠在封装基板上，使得多个第一连接端子中的第一组连接端子与封装基板组合。 第二半导体芯片设置成使得多个第二连接端子与多个第一连接端子中的第二组连接端子组合。

公开(公告)号：US09318828B2

公开(公告)日：2016-04-19

申请号：US14091228

申请日：2013-11-26

申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.

发明人： Young Ho Sohn ,  Eun Jung Jo ,  Jae Hyun Lim ,  Tae Hyun Kim

IPC分类号： H05K7/00 ,  H01R13/17 ,  H01R13/08 ,  H01L23/00 ,  H01R12/71 ,  H01R12/73

CPC分类号： H01R13/17 ,  H01L24/72 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01R12/714 ,  H01R12/73 ,  H01R13/08 ,  H01L2924/00

摘要： Disclosed herein is a contact pin including: a deformation part elastically deformed; connection parts coupled to both ends of the deformation part; and contact parts coupled to the connection parts coupled to both ends of the deformation part, respectively, and having one end coupled to the connection part and the other end.

摘要翻译： 这里公开了一种接触销，包括：变形部弹性变形; 耦合到变形部分的两端的连接部分; 以及分别联接到连接部分的接合部分，所述连接部分分别连接到变形部分的两端，并且其一端联接到连接部分和另一端。

公开(公告)号：US09318473B2

公开(公告)日：2016-04-19

申请号：US13451930

申请日：2012-04-20

申请人： Joachim Mahler ,  Khalil Hosseini ,  Edward Fuergut ,  Manfred Mengel

发明人： Joachim Mahler ,  Khalil Hosseini ,  Edward Fuergut ,  Manfred Mengel

IPC分类号： H01L23/34 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L25/16 ,  H01L23/498 ,  H01L21/56 ,  H01L23/538 ,  H01L23/29 ,  H01L25/00 ,  H01L23/00

CPC分类号： H01L25/16 ,  H01L21/561 ,  H01L23/295 ,  H01L23/49805 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/24 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/743 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/24011 ,  H01L2224/2402 ,  H01L2224/24137 ,  H01L2224/245 ,  H01L2224/27312 ,  H01L2224/27318 ,  H01L2224/2732 ,  H01L2224/27416 ,  H01L2224/27422 ,  H01L2224/27438 ,  H01L2224/2784 ,  H01L2224/27848 ,  H01L2224/29076 ,  H01L2224/29078 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/30505 ,  H01L2224/3201 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33505 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4814 ,  H01L2224/48151 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82101 ,  H01L2224/82104 ,  H01L2224/82105 ,  H01L2224/82106 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/83951 ,  H01L2224/92244 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/85399 ,  H01L2224/05599

摘要： In a method of manufacturing a semiconductor device, a first semiconductor element is mounted on a carrier. A b-stage curable polymer is deposited on the carrier. A second semiconductor element is affixed on the polymer.

摘要翻译： 在制造半导体器件的方法中，第一半导体元件安装在载体上。 在载体上沉积b级可固化聚合物。 第二个半导体元件固定在聚合物上。

公开(公告)号：US09318353B2

公开(公告)日：2016-04-19

申请号：US14112277

申请日：2012-04-02

申请人： Ryoji Kojima

发明人： Ryoji Kojima

IPC分类号： H01L21/50 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H05K1/18 ,  C09J7/02 ,  H01L21/60

CPC分类号： H01L21/50 ,  C09J7/35 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/50 ,  H01L2021/60 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75315 ,  H01L2224/75317 ,  H01L2224/7598 ,  H01L2224/81193 ,  H01L2224/83192 ,  H01L2224/83851 ,  H01L2224/83862 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2924/00011 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/07802 ,  H01L2924/07811 ,  H01L2924/15787 ,  H01L2924/15788 ,  H05K1/181 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/29075

摘要： A method of manufacturing a connection structure which includes a wiring substrate, a first electronic component that is flip-chip mounted on the front surface thereof, and a second electronic component that is flip-chip mounted on the rear surface. The method includes the steps of: temporarily mounting the first electronic component on the front surface of the wiring substrate with a first adhesive film disposed therebetween; temporarily mounting the second electronic component on the rear surface of the wiring substrate with a second adhesive film disposed therebetween, placing, on a pressure bonding receiving base, the wiring substrate on which the first electronic component and the second electronic component are temporarily mounted; and mounting the first electronic component and the second electronic component at a time onto the respective front and rear surfaces of the wiring substrate.

摘要翻译： 一种制造连接结构的方法，其包括布线基板，安装在其前表面上的倒装芯片的第一电子部件和倒装芯片安装在后表面上的第二电子部件。 该方法包括以下步骤：将第一电子部件临时安装在布线基板的前表面上，其间设置有第一粘合膜; 将第二电子部件临时安装在布线基板的背面上，其间设置有第二粘合膜，在压接接收基底上放置第一电子部件和第二电子部件临时安装的布线基板; 并且一次将第一电子部件和第二电子部件安装到布线基板的各个前表面和后表面上。

公开(公告)号：US09312245B2

公开(公告)日：2016-04-12

申请号：US14496140

申请日：2014-09-25

申请人： International Rectifier Corporation

发明人： Heny Lin ,  Jason Zhang ,  Alberto Guerra

IPC分类号： H01L25/07 ,  H01L27/20 ,  H01L23/495 ,  H01L29/20 ,  H01L29/16 ,  H01L29/772 ,  H01L23/00 ,  H01L29/778

CPC分类号： H01L25/074 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/69 ,  H01L24/72 ,  H01L24/73 ,  H01L29/16 ,  H01L29/2003 ,  H01L29/772 ,  H01L29/778 ,  H01L2224/0603 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/10253 ,  H01L2924/10323 ,  H01L2924/1033 ,  H01L2924/10334 ,  H01L2924/10344 ,  H01L2924/10346 ,  H01L2924/1306 ,  H01L2924/15787 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

摘要： One exemplary disclosed embodiment comprises a three-terminal stacked-die package including a field effect transistor (PET), such as a silicon PET, stacked atop a III-nitride transistor, such that a drain of the PET resides on and is electrically coupled to a source of the III-nitride transistor. A first terminal of the package is coupled to a gate of the FET, a second terminal of the package is coupled to a drain of the III-nitride transistor. A third terminal of the package is coupled to a source of the FET. In this manner, devices such as cascoded switches may be packaged in a stacked-die form, resulting in reduced parasitic inductance and resistance, improved thermal dissipation, smaller form factor, and lower manufacturing cost compared to conventional packages.

摘要翻译： 一个示例性的公开的实施例包括三端子堆叠管芯封装，其包括层叠在III族氮化物晶体管的顶部的诸如硅PET的场效应晶体管（PET），使得PET的漏极位于电耦合到 III族氮化物晶体管的源极。 封装的第一端子耦合到FET的栅极，封装的第二端子耦合到III族氮化物晶体管的漏极。 封装的第三端子耦合到FET的源极。 以这种方式，诸如级联开关的器件可以以堆叠的管芯形式被封装，从而与常规封装相比，减小了寄生电感和电阻，改善的散热，更小的外形尺寸和更低的制造成本。